ST STTH6012 User Manual
Main product characteristics
STTH6012
Ultrafast recovery - 1200 V diode
I
F(AV)
V
RRM
T
j
(typ) 1.30 V
V
F
(typ) 50 ns
t
rr
60 A
1200 V
175° C
Features and benefits
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
KA
A
K
DO-247
STTH6012W
Order codes
Part Number Marking
STTH6012W STTH6012W
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
March 2006 Rev 1 1/8
www.st.com
8
Characteristics STTH6012
1 Characteristics
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FRM
I
FSM
T
Table 2. Thermal parameter
Repetitive peak reverse voltage 1200 V
RMS forward current 80 A
Average forward current, δ = 0.5 Tc = 90° C 60 A
Repetitive peak forward current tp = 5 µs, F = 5 kHz square 500 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 400 A
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature 175 °C
T
j
Symbol Parameter Value Unit
R
th(j-c)
Table 3. Static electrical characteristics
Junction to case 0.6 °C/W
Symbol Parameter Test conditions Min. Typ Max. Unit
T
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25° C
j
= 125° C 30 300
T
j
T
= 25° C
j
= 150° C 1.30 1.95
T
j
= V
V
R
= 60 A
I
F
RRM
30
2.25
µA
VTj = 125° C 1.35 2.05
To evaluate the conduction losses use the following equation:
P = 1.50 x I
2/8
F(AV)
+ 0.0075 I
F2(RMS)
STTH6012 Characteristics
Table 4. Dynamic characteristics
Symbol Parameter
t
Reverse recovery time
rr
I
Reverse recovery current
RM
S Softness factor
t
Forward recovery time
fr
V
Forward recovery voltage
FP
Figure 1. Conduction losses versus
average current
P(W)
160
140
120
100
80
60
40
20
0
δ = 0.05
0 1020304050607080
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25° C
V
R
= 1 A, dIF/dt = -200 A/µs,
I
F
VR = 30 V, Tj = 25° C
I
= 60 A, dIF/dt = -200 A/µs,
F
VR = 600 V, Tj = 125° C
= 60 A, dIF/dt = -200 A/µs,
I
F
= 600 V, Tj = 125° C
V
R
= 60 A dIF/dt = 100 A/µs
I
F
VFR = 1.5 x V
= 60 A, dIF/dt = 100 A/µs,
I
F
= 25° C
T
j
, Tj = 25° C
Fmax
Figure 2. Forward voltage drop versus
I (A)
FM
200
180
δ = 1
T
tp
160
140
120
100
80
60
(maximum values)
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
forward current
T=150°C
j
(typical values)
T=150°C
j
Min. Typ Max. Unit
125
63 85
ns
50 70
32 45 A
1
750 ns
4.5 V
T= 25°C
j
(maximum values)
V (V)
FM
3/8
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