ST STTH6010-Y User Manual

Features

STTH6010-Y

Automotive ultrafast recovery - high voltage diode

■ AEC-Q101 qualified

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

■ ECOPACK

®

2 compliant component

Description

The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability like automotive applications.

These diodes also fit into auxiliary functions such
as snubber, bootstrap, and demagnetization
applications.

The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.

K

DO-247

STTH6010WY

Table 1. Device summary

I

F(AV)

V

RRM

T

j

(typ) 1.3 V

V

F

(typ) 49 ns

t

rr

KA

A

60 A

1000 V

175 °C

November 2011 Doc ID 018924 Rev 1 1/8

www.st.com

8

Characteristics Device name or AN #

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

Table 3. Thermal parameters

Repetitive peak reverse voltage 1000 V

Forward rms current 80 A

Average forward current, δ = 0.5 Tc = 75 °C 60 A

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 450 A

Surge non repetitive forward current tp = 10 ms sinusoidal 400 A

Storage temperature range -65 to +175 °C

stg

Operating junction temperature range -40 to +175 °C

T

j

Symbol Parameter Value Unit

R

th(j-c)

Table 4. Static electrical characteristics

Junction to case 0.78 °C/W

Symbol Parameter Test conditions Min. Typ Max. Unit

T

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25 °C

j

= 125 °C 20 200

T

j

T

= 25 °C

j

T

= 150 °C 1.3 1.7

j

= V

V

R

= 60 A

I

F

RRM

20

2.0

µA

VTj = 100 °C 1.4 1.8

To evaluate the conduction losses use the following equation:

P = 1.3 x I

2/8 Doc ID 018924 Rev 1

+ 0.0067 I

F(AV)

F2(RMS)

Device name or AN # Characteristics

Table 5. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

t

Forward recovery time

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

140

120

100

80

60

40

20

0

0 1020304050607080

=0.05

=0.1

=0.2

I (A)

F(AV)

=0.5

Test conditions

I

= 1 A, dIF/dt = -50 A/µs,

F

= 30 V, Tj = 25 °C

V

R

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25 °C

V

R

I

= 1 A, dIF/dt = -200 A/µs,

F

VR = 30 V, Tj = 25 °C

= 60 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125 °C

V

R

= 60 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125 °C

V

R

I

= 60 A dIF/dt = 100 A/µs

F

VFR = 1.5 x V

, Tj = 25 °C

Fmax

IF = 60 A, dIF/dt = 100 A/µs,

= 25 °C

T

j

Figure 2. Forward voltage drop versus

I (A)

FM

=1

T

200

180

160

140

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Min. Typ Max. Unit

forward current

Tj=150°C

(Maximum values)

Tj=150°C

(Typical values)

115

61 80

ns

49 65

31 40 A

1

750 ns

4V

Tj=25°C

(Maximum values)

V (V)

FM

Figure 3. Relative variation of thermal

impedance junction to case
versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Figure 4. Peak reverse recovery current

versus dI

I (A)

RM

70

VR=600V
T

=125°C

j

60

50

40

30

20

10

Doc ID 018924 Rev 1 3/8

IF=0.5 x I

F(AV)

0

0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

IF= 2 x I

IF= I

F(AV)

dI /dt(A/µs)

F

F(AV)