ST STTH6010 User Manual

Main product characteristics

STTH6010

Ultrafast recovery - high voltage diode

I

F(AV)

V

RRM

T

j

V

(typ) 1.3 V

F

(typ) 49 ns

t

rr

60 A

1000 V

175° C

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

Description

The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.

KA

A

K

DO-247

STTH6010W

Order codes

Part Number Marking

STTH6010W STTH6010W

Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.

The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.

March 2006 Rev 1 1/8

www.st.com

8

Characteristics STTH6010

1 Characteristics

Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

Table 2. Thermal parameters

Repetitive peak reverse voltage 1000 V

RMS forward current 80 A

Average forward current, δ = 0.5 Tc = 75° C 60 A

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 450 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 400 A

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature 175 °C

j

Symbol Parameter Value Unit

R

th(j-c)

Table 3. Static electrical characteristics

Junction to case 0.78 °C/W

Symbol Parameter Test conditions Min. Typ Max. Unit

T

= 25° C

(1)

I

R

Reverse leakage current

j

Tj = 125° C 20 200

= V

V

R

RRM

20

µA

(2)

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Forward voltage drop

F

= 380 µs, δ < 2 %

p

To evaluate the conduction losses use the following equation:

P = 1.3 x I

F(AV)

+ 0.0067 I

= 25° C

T

j

I

= 60 A

F

Tj = 150° C 1.3 1.7

F2(RMS)

2.0

VTj = 100° C 1.4 1.8

2/8

STTH6010 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

Forward recovery time

t

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

140

120

100

80

60

40

20

0

0 1020304050607080

=0.05

=0.1

I(A)

F(AV)

=0.2

=0.5

Test conditions

IF = 1 A, dIF/dt = -50 A/µs,
V

= 30 V, Tj = 25° C

R

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

IF = 1 A, dIF/dt = -200 A/µs,

= 30 V, Tj = 25° C

V

R

IF = 60 A, dIF/dt = -200 A/µs,
V

= 600 V, Tj = 125° C

R

= 60 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125° C

V

R

= 60 A dIF/dt = 100 A/µs

I

F

= 1.5 x V

V

FR

I

= 60 A, dIF/dt = 100 A/µs,

F

, Tj = 25° C

Fmax

Tj = 25° C

Figure 2. Forward voltage drop versus

I (A)

FM

=1

T

200

180

160

140

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Min. Typ Max. Unit

forward current

Tj=150°C

(Maximum values)

Tj=150°C

(Typical values)

115

61 80

ns

49 65

31 40 A

1

750 ns

4V

Tj=25°C

(Maximum values)

V(V)

FM

Figure 3. Relative variation of thermal

impedance junction to case
versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Figure 4. Peak reverse recovery current

versus dI

I (A)

RM

70

VR=600V
T

=125°C

j

60

50

40

30

20

10

3/8

IF=0.5 x I

F(AV)

0

0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

IF= 2 x I

IF= I

F(AV)

dI /dt(A/µs)

F

F(AV)