ST STTH6006W User Manual

Table 1. Main product characteristics

I

F(AV)

V

RRM

T

j

(typ) 1.1 V

V

F

t

(max) 60 ns

rr

60 A

600 V

175° C

STTH6006W

Turbo 2 ultrafast - high voltage rectifier

KA

A

Features and benefits

K

DO-247

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces conduction and switching losses

STTH6006W

Description

The STTH6006W uses ST Turbo 2 600 V technology. This device is specially suited for use in switching power supplies, and industrial applications. The V

/ Trr trade-off has been

F

specially established to increase the performance in welding applications.

Table 3. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

T

1. to avoid thermal runaway for a diode on its own heatsink

Repetitive peak reverse voltage 600 V

RMS forward current 90 A

Average forward current, δ = 0.5 Tc = 95° C 60 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 400 A

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

dP

tot

j

1

--------------------------< R

th j a–()

--------------dT

Table 2. Order code

Part number Marking

STTH6006W STTH6006W

(1)

175 °C

July 2007 Rev 2 1/7

www.st.com

Characteristics STTH6006W

1 Characteristics

Table 4. Thermal parameters

Symbol Parameter Value Unit

R

th(j-c)

Table 5. Static electrical characteristics

Junction to case 0.75 °C/W

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Reverse leakage current

R

(2)

Forward voltage drop

F

Tj = 25° C

VR = V

= 60 A

I

F

RRM

= 125° C 160 1600

T

j

T

= 25° C

j

= 150° C 1.10 1.40

T

j

50

1.85

To evaluate the conduction losses use the following equation: P = 1.07 x I

Table 6. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

+ 0.006 I

F(AV)

F2(RMS)

Reverse recovery time

Reverse recovery current

Test conditions

I

= 0.5 A, Irr = 0.25 A, IR = 1 A,

F

Tj = 25° C

= 1 A, dIF/dt = -50 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 60 A, dIF/dt = -100 A/µs,

I

F

VR = 400 V, Tj = 150° C

Min. Typ Max. Unit

60

60 85

10.5 14

µA

V

ns

I

= 60 A dIF/dt = 200 A/µs

t

Forward recovery time

fr

V

Forward recovery voltage

FP

F

V

FR

= 60 A dIF/dt = 200 A/µs

I

F

V

FR

2/7

= 1.1 x V

, Tj = 25° C

Fmax

, Tj = 25° C

Fmax

500 ns

3V

STTH6006W Characteristics

Figure 1. Conduction losses versus

average current

P (W)

F(AV)

110

100

90

80

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40 45 50 55 60 65 70

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ = 1

δ

T

=tp/T

Figure 3. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Figure 2. Forward voltage drop versus

forward current

I (A)

FM

200

180

160

140

120

100

80

60

40

tp

20

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

(typical values)

T=150°C

j

T=150°C

j

(maximum values)

V (V)

FM

T=25°C

j

Figure 4. Peak reverse recovery current

versus dI

I (A)

RM

50

V =400V

R

45

T=125°C

j

40

35

30

25

I =0.25 x I

20

F F(AV)

15

10

5

0

0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

I=I

F F(AV)

I =0.5 x I

F F(AV)

dI /dt(A/µs)

F

I =2 x I

F F(AV)

Figure 5. Reverse recovery time versus

dI

/dt (typical values)

F

t (ns)

rr

500

450

400

350

300

250

200

150

100

50

0

I =2 x I

F F(AV)

I=I

F F(AV)

0 50 100 150 200 250 300 350 400 450 500

I =0.5 x I

dI /dt(A/µs)

F

F F(AV)

V =400V

R

T=125°C

j

Figure 6. Reverse recovery charges versus

dIF/dt (typical values)

Q (nC)

rr

3000

V =400V

R

2750

T=125°C

j

2500

2250

2000

1750

1500

1250

1000

750

500

250

0

0 50 100 150 200 250 300 350 400 450 500

3/7

I =2 x I

F F(AV)

I=I

F F(AV)

I =0.5 x I

F F(AV)

dI /dt(A/µs)

F