ST STTH6006TV User Manual
STTH6006TV
Turbo 2 ultrafast - high voltage rectifier
Main product characteristics
I
F(AV)
V
RRM
T
j
V
(typ) 1.1 V
F
(max) 50 ns
t
rr
2 x 30 A
600 V
150° C
K1
A1
K2
A2
A1
K1
A2
Features and benefits
■ Ultrafast switching
■ Low reverse current
■ Low thermal resistance
■ Reduces conduction and switching losses
■ Insulated voltage: 2500 V
Typical package capacitance: 45 pF
■
RMS
K2
ISOTOP
STTH6006TV1
Description
Order codes
The STTH6006TV1 uses ST Turbo2 600V
technology. This device is specially suited for use
in switching power supplies, and industrial
applications such as rectification and PFC boost
diode.
Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Part Number Marking
STTH6006TV1 STTH6006TV1
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
1. thermal runaway condition for a diode on its own heatsink
Repetitive peak reverse voltage 600 V
RMS forward current 100 A
Average forward current, δ = 0.5 Per diode Tc = 70° C 30 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 210 A
Storage temperature range -55 to + 150 °C
stg
T
Maximum operating junction temperature
j
dP
tot
j
1
--------------------------<
R
th j a–()
--------------dT
(1)
150 °C
May 2006 Rev 1 1/7
www.st.com
Characteristics STTH6006TV
1 Characteristics
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junction to case
° C/WTo ta l 0 .8 5
Coupling 0.1
When the diodes are used simultaneously:
Per diode 1.6
∆T
j(diode1)
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
= P
(diode1)
(1)
Reverse leakage current
R
(2)
Forward voltage drop
F
x R
(per diode) + P
th(j-c)
x R
= V
V
R
= 30 A
I
F
th(c)
RRM
(diode2)
T
= 25° C
j
= 125° C 80 800
T
j
T
= 25° C
j
T
= 150° C 1.10 1.40
j
25
1.85
To evaluate the conduction losses use the following equation:
P = 1.07 x I
Table 4. Dynamic characteristics
Symbol Parameter
F(AV)
+ 0.011 I
F2(RMS)
Test conditions
Min. Typ Max. Unit
µA
V
= 0.5 A, Irr = 0.25 A, IR = 1 A,
I
F
= 25° C
T
j
= 1 A, dIF/dt = -50 A/µs,
I
F
V
= 30 V, Tj = 25° C
R
= 30 A, dIF/dt = -100 A/µs,
I
F
= 400 V, Tj = 125° C
V
R
= 30 A dIF/dt = 100 A/µs
I
F
V
FR
I
= 30 A dIF/dt = 100 A/µs
F
VFR = 1.1 x V
V
I
Reverse recovery time
t
rr
Reverse recovery current
RM
Forward recovery time
t
fr
Forward recovery voltage
FP
2/7
= 1.1 x V
, Tj = 25° C
Fmax
, Tj = 25° C
Fmax
50
ns
50 70
811
500 ns
2.5 V
STTH6006TV Characteristics
Figure 1. Conduction losses versus
average current
P(W)
55
50
45
40
35
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
δ = 1
T
=tp/T
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration
Z/R
th(j-c) th(j-c)
1.0
Single pulse
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
Figure 5. Reverse recovery time versus
dI
/dt (typical values)
F
t (ns)
rr
200
150
100
50
0
0 200 400 600 800 1000
I =2 x I
FF(AV)
dI /dt(A/µs)
F
I=I
FF(AV)
I =0.5 x I
FF(AV)
V =600V
R
T=125°C
j
Figure 2. Forward voltage drop versus
forward current
I (A)
FM
200
180
160
140
120
100
80
60
40
tp
20
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
(typical values)
T=150°C
j
(maximum values)
T=150°C
j
Figure 4. Peak reverse recovery current
versus dI
I (A)
RM
30
V =600V
R
T=125°C
j
25
20
15
10
5
0
0 50 100 150 200 250 300 350 400 450 500
I =0.5 x I
I =0.25 x I
FF(AV)
/dt (typical values)
F
I=I
FF(AV)
FF(AV)
dI /dt(A/µs)
F
I =2 x I
FF(AV)
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
Q (nC)
rr
3.0
V =600V
R
T=125°C
j
2.5
I =2 x I
2.0
1.5
1.0
0.5
0.0
0 200 400 600 800 1000
FF(AV)
dI /dt(A/µs)
F
I =0.5 x I
F F(AV)
V (V)
FM
I=I
FF(AV)
T=25°C
j
(maximum values)
3/7
Loading...