ST STTH6002C User Manual

STTH6002C

High efficiency ultrafast diode

Main product characteristics

IF(AV)	2 x 30 A
VRRM	200 V
Tj (max)	175° C
VF (typ)	0.75 V
trr (typ)	22 ns

Features and benefits

■Suited for SMPS

■Low losses

■Low forward and reverse recovery times

■High surge current capability

■High junction temperature

Description

Dual center tab rectifier suited for switch mode power supplies and high frequency DC to DC converters.

Packaged in TO-247 and TOP3I, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection

A1

K

A2

A2 A1 K

TO-247

STTH6002CW

NC

A2

A1 K

TOP3I

STTH6002CPI

Order codes

Part Number	Marking
STTH6002CW	STTH6002C
STTH6002CPI	STTH6002C

April 2006

Rev 2

1/9

www.st.com

Characteristics

STTH6002C

1

Characteristics

Table 1.

Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

200

V

IF(RMS)

RMS forward current

50

A

TO-247

Per diode Tc = 140° C

30

IF(AV)

Average forward current, δ = 0.5

Per device Tc = 125° C

60

A

TOP3I

Per diode Tc = 120° C

30

Per device Tc = 105° C

60

IFSM

Surge non repetitive forward current

tp = 10 ms Sinusoidal

330

A

Tstg

Storage temperature range

-65 to +175

° C

Tj

Maximum operating junction temperature

175

° C

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

TO-247

Per diode

1.2

Rth(j-c)

Junction to case

Total

0.8

TOP3I

Per diode

1.8

° C/W

Total

1.20

Rth(c)

Coupling

TO-247

0.4

TOP3I

0.6

When the two diodes 1 and 2 are used simultaneously:

∆Tj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c)

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	STTH6002C							Characteristics
	Table 3.	Static electrical characteristics
	Symbol	Parameter	Test conditions				Typ	Max.	Unit
	I (1)	Reverse leakage current	Tj = 25° C	V		= V		30	µA
					R
	R		Tj = 125° C			RRM	30	300
			Tj = 25° C	IF = 30 A				1.05
	VF(2)	Forward voltage drop		IF = 60 A				1.18	V
			Tj = 150° C	IF = 30 A			0.75	0.84
				IF = 60 A			0.9	0.99

1.Pulse test: tp = 5 ms, δ < 2 %

2.Pulse test: tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation:

P = 0.69 x IF(AV) + 0.005 IF2(RMS)

	Table 4.	Dynamic characteristics
	Symbol	Parameter			Test conditions	Typ	Max.	Unit
	trr	Reverse recovery time	IF	= 1 A, dIF/dt = 200 A/µs,		22	27	ns
			VR = 30 V, Tj = 25 °C
	IRM	Reverse recovery current	IF	= 30	A, dIF/dt = 200 A/µs,	7.6	9.5	A
			VR = 160 V, Tj = 125 °C
	tfr	Forward recovery time	IF	= 30	A, dIF/dt = 200 A/µs		220	ns
			VFR = 1.1 x VFmax, Tj = 25 °C
	VFP	Forward recovery voltage	IF	= 30	A, dIF/dt = 200 A/µs,	2.5		V
			Tj = 25		°C
	Figure 1. Peak current versus duty cycle				Figure 2. Forward voltage drop versus
		(per diode)			forward current (per diode)

I	(A)
M

200

180	IM	T
160	δd=tp/T	tp

140

120			P = 20 W
100
80				P = 10 W
60						P = 5 W
									δ
40
20
0
0.0	0.1	0.2	0.3	0.4	0.5	0.6	0.7	0.8	0.9	1.0

I	(A)
FM
300
250					Tj=150°C
					(typ values)
200
				Tj=150°C
150				(max values)
100
50							Tj=25°C
							(max values)		VFM(V)
0
0.0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0

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