ST STTH6002C User Manual
Main product characteristics
STTH6002C
High efficiency ultrafast diode
I
F(AV)
V
RRM
T
(max) 175° C
j
V
(typ) 0.75 V
F
(typ) 22 ns
t
rr
2 x 30 A
200 V
Features and benefits
■ Suited for SMPS
■ Low losses
■ Low forward and reverse recovery times
■ High surge current capability
■ High junction temperature
Description
Dual center tab rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in TO-247 and TOP3I, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
A1
A2
A2
K
A1
TO-247
STTH6002CW
NC
K
A1
TOP3I
STTH6002CPI
K
A2
Order codes
Part Number Marking
STTH6002CW STTH6002C
STTH6002CPI STTH6002C
April 2006 Rev 2 1/9
www.st.com
Characteristics STTH6002C
1 Characteristics
Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
Repetitive peak reverse voltage 200 V
RMS forward current 50 A
Per diode Tc = 140° C
30
TO-247
I
F(AV)
I
FSM
T
Table 2. Thermal parameters
Average forward current, δ = 0.5
Surge non repetitive forward current tp = 10 ms Sinusoidal 330 A
Storage temperature range -65 to +175 ° C
stg
T
Maximum operating junction temperature 175 ° C
j
TOP3I
Per device Tc = 125° C
Per diode T
Per device T
= 120° C
c
= 105° C
c
60
30
60
Symbol Parameter Value Unit
Per diode 1.2
TO-247
Total 0.8
R
th(j-c)
Junction to case
TOP3I
Per diode 1.8
° C/W
Total 1.20
TO-247 0.4
R
th(c)
Coupling
TOP3I 0.6
A
When the two diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P (diode 1) X R
2/9
(Per diode) + P (diode 2) x R
th(j-c)
th(c)
STTH6002C Characteristics
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Typ Max. Unit
(1)
I
R
V
F
Reverse leakage current
(2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
= 380 µs, δ < 2 %
p
= 25° C
T
j
Tj = 125° C 30 300
= 25° C
T
j
V
= V
R
RRM
I
= 30 A 1.05
F
I
= 60 A 1.18
F
IF = 30 A 0.75 0.84
Tj = 150° C
I
= 60 A
F
0.9 0.99
30
To evaluate the conduction losses use the following equation:
P = 0.69 x I
Table 4. Dynamic characteristics
Symbol Parameter
t
rr
I
RM
t
fr
V
FP
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
Figure 1. Peak current versus duty cycle
(per diode)
IM(A)
200
180
160
140
120
100
80
60
40
20
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
P = 20 WP = 20 W
P = 10 WP = 10 W
F(AV)
+ 0.005 I
I
I
P = 5 WP = 5 W
F2(RMS)
M
M
=tp/T
=tp/T
d
δ
Test conditions
= 1 A, dIF/dt = 200 A/µs,
I
F
= 30 V, Tj = 25 °C
V
R
IF = 30 A, dIF/dt = 200 A/µs,
V
= 160 V, Tj = 125 °C
R
= 30 A, dIF/dt = 200 A/µs
I
F
= 1.1 x V
V
FR
Fmax
IF = 30 A, dIF/dt = 200 A/µs,
T
= 25 °C
j
Figure 2. Forward voltage drop versus
IFM(A)
T
T
tp
tp
δ
300
250
200
150
100
50
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Typ Ma x. U nit
, Tj = 25 °C
forward current (per diode)
Tj=150°C
(typ values)
Tj=150°C
(max values)
22 27 ns
7.6 9.5 A
220 ns
2.5 V
Tj=25°C
(max values)
VFM(V)
µA
V
3/9
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