ST STTH506 User Manual

STTH506

Turbo 2 ultrafast - high voltage rectifier

Main product characteristics

I

F(AV)

V

RRM

T

j

(typ) 1.1 V

V

F

(max) 30 ns

t

rr

5 A

600 V

175° C

Features and benefits

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces conduction and switching losses

■ Insulated package TO-220FPAC

– Insulated voltage: 2500 V

RMS

– Typical package capacitance: 12 pF

Description

K

NC

STTH506B

A

K

TO-220AC

STTH506D

Order codes

Part Number Marking

STTH506B STTH506B

STTH506B-TR STTH506B

KA

A

DPAK

K

TO-220FPAC

STTH506FP

STTH506D STTH506D

The STTH506 uses ST Turbo2 600V technology.

STTH506FP STTH506FP

This device is specially suited for use in switching power supplies, and industrial applications.

Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)

A

Symbol Parameter Value Unit

V

RRM

Repetitive peak reverse voltage 600 V

TO-220AC, TO220FPAC 20 A

I

F(RMS)

I

F(AV)

I

FSM

T

1. thermal runaway condition for a diode on its own heatsink

RMS forward current

DPAK 10 A

T

= 145° C TO-220AC, DPAK 5 A

Average forward current, δ = 0.5

Surge non repetitive forward current

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature

j

dP

tot

j

1

--------------------------< R

th j a–()

--------------dT

c

T

= 120° C TO-220FPAC 5 A

c

tp = 10 ms Sinusoidal

(1)

TO-220AC, TO220FPAC 70 A

DPAK 55 A

175 °C

May 2006 Rev 1 1/9

www.st.com

Characteristics STTH506

1 Characteristics

Table 2. Thermal parameters

Symbol Parameter Value Unit

R

th(j-c)

Table 3. Static electrical characteristics

Junction to case

TO-220AC, DPAK 3.5

TO-220FPAC 6

° C/W

Symbol Parameter Test conditions Min. Typ Max. Unit

T

= 25° C

(1)

I

R

V

Reverse leakage current

(2)

Forward voltage drop

F

j

= 150° C 13 130

T

j

T

= 25° C

j

Tj = 150° C 1.10 1.40

V

R

= 5 A

I

F

= V

RRM

5

1.85

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

= 380 µs, δ < 2 %

p

To evaluate the conduction losses use the following equation: P = 1.07 x I

Table 4. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

Figure 1. Conduction losses versus

average current

F(AV)

+ 0.066 I

F2(RMS)

Test conditions

= 0.5 A, Irr = 0.25 A, IR = 1 A,

I

F

= 25° C

T

j

= 1 A, dIF/dt = -50 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

IF = 5 A, dIF/dt = -100 A/µs, V

= 400 V, Tj = 25° C

R

= 5 A dIF/dt = 100 A/µs

I

F

= 1.1 x V

V

FR

I

= 5 A dIF/dt = 100 A/µs

F

= 1.1 x V

V

FR

, Tj = 25° C

Fmax

, Tj = 25° C

Fmax

Figure 2. Forward voltage drop versus

Min. Typ Max. Unit

30

35 50

3.5 5

180 ns

4V

forward current

µA

V

ns

P (W)

F(AV)

9

8

7

6

5

4

3

2

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

2/9

I (A)

FM

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

T=150°C

(typical values)

j

T=150°C

j

(maximum values)

V (V)

FM

T=25°C

j

(maximum values)

STTH506 Characteristics

Figure 3. Relative variation of thermal

impedance junction to case versus pulse duration (TO-220AC, DPAK)

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

TO-220AC

DPAK

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Figure 5. Peak reverse recovery current

versus dI

I (A)

RM

14

V =400V

R

T=125°C

j

12

10

8

6

I =0.25 x I

FF(AV)

4

2

0

0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

I=I

FF(AV)

I =0.5 x I

FF(AV)

dI /dt(A/µs)

F

I =2 x I

FF(AV)

Figure 4. Relative variation of thermal

impedance junction to case versus pulse duration (TO-220FPAC)

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

TO-220FPAC

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

p

Figure 6. Reverse recovery time versus

dIF/dt (typical values)

t (ns)

rr

250

200

I =2 x I

150

100

50

0

0 50 100 150 200 250 300 350 400 450 500

FF(AV)

I=I

F F(AV)

dI /dt(A/µs)

F

I =0.5 x I

FF(AV)

V =400V

R

T=125°C

j

Figure 7. Reverse recovery charges versus

dI

/dt (typical values)

F

Q (nC)

rr

350

V =400V

R

T=125°C

j

300

250

200

150

100

50

0 50 100 150 200 250 300 350 400 450 500

I =2 x I

FF(AV)

dI /dt(A/µs)

F

I=I

FF(AV)

I =0.5 x I

FF(AV)

Figure 8. Softness factor versus

dIF/dt (typical values)

S factor

2.50

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

3/9

I = 2 x I

FF(AV)

V = 400 V

R

T = 125° C

j