![](/html/a4/a4aa/a4aac2fa565f0b3e66dd213639f55366e9958e21292bf734f260aed2c1d882aa/bg1.png)
STTH506
Turbo 2 ultrafast - high voltage rectifier
Main product characteristics
I
F(AV)
V
RRM
T
j
(typ) 1.1 V
V
F
(max) 30 ns
t
rr
5 A
600 V
175° C
Features and benefits
■ Ultrafast switching
■ Low reverse current
■ Low thermal resistance
■ Reduces conduction and switching losses
■ Insulated package TO-220FPAC
– Insulated voltage: 2500 V
RMS
– Typical package capacitance: 12 pF
Description
K
NC
STTH506B
A
K
TO-220AC
STTH506D
Order codes
Part Number Marking
STTH506B STTH506B
STTH506B-TR STTH506B
KA
A
DPAK
K
TO-220FPAC
STTH506FP
STTH506D STTH506D
The STTH506 uses ST Turbo2 600V technology.
STTH506FP STTH506FP
This device is specially suited for use in switching
power supplies, and industrial applications.
Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
A
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
TO-220AC, TO220FPAC 20 A
I
F(RMS)
I
F(AV)
I
FSM
T
1. thermal runaway condition for a diode on its own heatsink
RMS forward current
DPAK 10 A
T
= 145° C TO-220AC, DPAK 5 A
Average forward current, δ = 0.5
Surge non repetitive forward current
Storage temperature range -65 to + 175 °C
stg
T
Maximum operating junction temperature
j
dP
tot
j
1
--------------------------<
R
th j a–()
--------------dT
c
T
= 120° C TO-220FPAC 5 A
c
tp = 10 ms
Sinusoidal
(1)
TO-220AC, TO220FPAC 70 A
DPAK 55 A
175 °C
May 2006 Rev 1 1/9
www.st.com
![](/html/a4/a4aa/a4aac2fa565f0b3e66dd213639f55366e9958e21292bf734f260aed2c1d882aa/bg2.png)
Characteristics STTH506
1 Characteristics
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Table 3. Static electrical characteristics
Junction to case
TO-220AC, DPAK 3.5
TO-220FPAC 6
° C/W
Symbol Parameter Test conditions Min. Typ Max. Unit
T
= 25° C
(1)
I
R
V
Reverse leakage current
(2)
Forward voltage drop
F
j
= 150° C 13 130
T
j
T
= 25° C
j
Tj = 150° C 1.10 1.40
V
R
= 5 A
I
F
= V
RRM
5
1.85
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
= 380 µs, δ < 2 %
p
To evaluate the conduction losses use the following equation:
P = 1.07 x I
Table 4. Dynamic characteristics
Symbol Parameter
t
rr
I
RM
t
fr
V
FP
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
Figure 1. Conduction losses versus
average current
F(AV)
+ 0.066 I
F2(RMS)
Test conditions
= 0.5 A, Irr = 0.25 A, IR = 1 A,
I
F
= 25° C
T
j
= 1 A, dIF/dt = -50 A/µs,
I
F
= 30 V, Tj = 25° C
V
R
IF = 5 A, dIF/dt = -100 A/µs,
V
= 400 V, Tj = 25° C
R
= 5 A dIF/dt = 100 A/µs
I
F
= 1.1 x V
V
FR
I
= 5 A dIF/dt = 100 A/µs
F
= 1.1 x V
V
FR
, Tj = 25° C
Fmax
, Tj = 25° C
Fmax
Figure 2. Forward voltage drop versus
Min. Typ Max. Unit
30
35 50
3.5 5
180 ns
4V
forward current
µA
V
ns
P (W)
F(AV)
9
8
7
6
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
2/9
I (A)
FM
100
90
80
70
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T=150°C
(typical values)
j
T=150°C
j
(maximum values)
V (V)
FM
T=25°C
j
(maximum values)
![](/html/a4/a4aa/a4aac2fa565f0b3e66dd213639f55366e9958e21292bf734f260aed2c1d882aa/bg3.png)
STTH506 Characteristics
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AC, DPAK)
Z/R
th(j-c) th(j-c)
1.0
Single pulse
0.9
TO-220AC
DPAK
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
Figure 5. Peak reverse recovery current
versus dI
I (A)
RM
14
V =400V
R
T=125°C
j
12
10
8
6
I =0.25 x I
FF(AV)
4
2
0
0 50 100 150 200 250 300 350 400 450 500
/dt (typical values)
F
I=I
FF(AV)
I =0.5 x I
FF(AV)
dI /dt(A/µs)
F
I =2 x I
FF(AV)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAC)
Z/R
th(j-c) th(j-c)
1.0
Single pulse
0.9
TO-220FPAC
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
t (s)
p
Figure 6. Reverse recovery time versus
dIF/dt (typical values)
t (ns)
rr
250
200
I =2 x I
150
100
50
0
0 50 100 150 200 250 300 350 400 450 500
FF(AV)
I=I
F F(AV)
dI /dt(A/µs)
F
I =0.5 x I
FF(AV)
V =400V
R
T=125°C
j
Figure 7. Reverse recovery charges versus
dI
/dt (typical values)
F
Q (nC)
rr
350
V =400V
R
T=125°C
j
300
250
200
150
100
50
0 50 100 150 200 250 300 350 400 450 500
I =2 x I
FF(AV)
dI /dt(A/µs)
F
I=I
FF(AV)
I =0.5 x I
FF(AV)
Figure 8. Softness factor versus
dIF/dt (typical values)
S factor
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0 50 100 150 200 250 300 350 400 450 500
dI /dt(A/µs)
F
3/9
I = 2 x I
FF(AV)
V = 400 V
R
T = 125° C
j