ST STTH4R02 User Manual

STTH4R02

Ultrafast recovery diode

Features

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery times

■ High junction temperature

Description

The STTH4R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits.

Packaged in TO-220AC, TO-220FPAC, DPAK, SMB, SMC, and DO-201AB, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.

K

TO-220AC

STTH4R02D

K

NC

DPAK

STTH4R02B

K

A

DO-201AB STTH4R02

K

A

K

TO-220FPAC

STTH4R02FP

A

K

SMB

STTH4R02U

A

K

SMC

STTH4R02S

Table 1. Device summary

I

F(AV)

V

RRM

T

j (max)

(typ) 0.76 V

V

F

(typ) 16 ns

t

rr

July 2010 Doc ID 12360 Rev 4 1/13

4 A

200 V

175 °C

www.st.com

13

Characteristics STTH4R02

1 Characteristics

Table 2. Absolute ratings (limiting values at T

Symbol Parameter Value Unit

= 25 °C, unless otherwise stated)

amb

V

Repetitive peak reverse voltage 200 V

RRM

TO-220AC

DPAK

I

F(RMS)

Forward rms current

SMB / SMC

70 A

TO-220FPAC

DO-201AB

I

F(AV)

I

T

Table 3. Thermal parameters

Average forward current, δ = 0.5

Surge non repetitive forward

FSM

current

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature 175 °C

j

TO-220AC T

DPAK T

SMB T

SMC T

TO-220FPAC T

DO-201AB T

= 10 ms sinusoidal 70 A

t

p

= 160 °C

c

= 160 °C

c

= 95 °C

lead

= 95 °C

lead

= 150 °C

c

= 95 °C

lead

4A

Symbol Parameter Value Unit

TO-220AC / DPAK 3.5

th(j-c)

Junction to case

TO-220FPAC 6.5

R

SMB 20

R

th(j-l)

Junction to lead

DO-201AB 20

SMC 20

2/13 Doc ID 12360 Rev 4

°C/W

STTH4R02 Characteristics

Table 4. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

I

V

Reverse leakage current

R

(2)

Forward voltage drop

F

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

= 380 µs, δ < 2 %

p

Tj = 25 °C

VR = V

= 125 °C 2 20

T

j

= 25 °C IF = 12 A 1.15 1.25

T

j

= 25 °C

j

= 150 °C 0.76 0.83

T

j

RRM

0.95 1.05

IF = 4 A

3

To evaluate the conduction losses use the following equation: P = 0.67 x I

Table 5. Dynamic characteristics

Symbol Parameter

t

rr

Reverse recovery time

F(AV)

+ 0.04 I

F2(RMS)

I

= 1 A, dIF/dt = -50 A/µs,

F

VR = 30 V, Tj = 25 °C

I

= 1 A, dIF/dt = -100 A/µs,

F

VR = 30 V, Tj = 25 °C

Test conditions

Min. Typ. Max. Unit

24 30

16 20

µA

VT

ns

I

= 4 A, dIF/dt = -200 A/µs,

I

V

Reverse recovery current

RM

t

Forward recovery time

fr

Forward recovery voltage

FP

F

VR = 160 V, Tj = 125 °C

= 4 A, dIF/dt = 50 A/µs

I

F

= 1.1 x V

V

FR

= 4 A, dIF/dt = 50 A/µs,

I

F

= 25 °C

T

j

, Tj = 25 °C

Fmax

4.4 5.5 A

80 ns

1.6 V

Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus

forward current (typical values)

IM(A)

50

45

40

35

30

25

20

15

10

5

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P = 5 WP = 5 W

P = 2 WP = 2 W

P = 1 WP = 1 W

T

I

M

=tp/T

d

δ

tp

δ

IFM(A)

100

75

50

25

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Tj=150°C

Tj=25°C

VFM(V)

Doc ID 12360 Rev 4 3/13

Characteristics STTH4R02

Figure 3. Forward voltage drop versus

forward current (maximum values)

IFM(A)

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Tj=150°C

Tj=25°C

VFM(V)

Figure 5. Relative variation of thermal

impedance, junction to case, versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

Single pulse

TO-220FPAC

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

tp(s)

Figure 4. Relative variation of thermal

impedance, junction to case, versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

Single pulse

TO-220AC

DPAK

0.1

1.E-03 1.E-02 1.E-01 1.E+00

tp(s)

Figure 6. Relative variation of thermal

impedance, junction to ambient, versus pulse duration (SMB)

Z

th(j-a)/Rth(j-a)

1.0

SMB

0.9

S

=1cm²

Cu

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

Figure 7. Relative variation of thermal

Figure 8. Relative variation of thermal impedance, junction to ambient, versus pulse duration

Z

(°C/W)

th(j-a)

100

Single pulse

DO201AB

10

1

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

4/13 Doc ID 12360 Rev 4

Z

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

impedance, junction to ambient, versus pulse duration (SMC)

th(j-a)/Rth(j-a)

SMC

S

=1cm²

Cu

tp(s)