ST STTH4L06 User Manual
Features
STTH4L06
Turbo 2 ultrafast high voltage rectifier
■ Ultrafast switching
■ Low forward voltage drop
■ Low leakage current (platinum doping)
■ High operating junction temperature
Description
The STTH4L06, which uses ST Turbo 2 600 V
technology, is specially suited as boost diode in
discontinuous or critical mode power factor
corrections.
Packaged in DO-201AD and DO-15, this device is
intended for use as a free wheeling diode in
power supplies and other power switching
applications.
A
K
DO-201AD
STTH4L06
Band indicates cathode
Table 1. Device summary
I
F(AV)
V
RRM
T
j
V
(typ) 0.9 V
F
(typ) 40 ns
t
rr
KA
A
K
DO-15
STTH4L06Q
4 A
600 V
175 °C
September 2009 Doc ID 16276 Rev 1 1/8
www.st.com
8
Characteristics STTH4L06
1 Characteristics
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
Table 3. Thermal resistance
Repetitive peak reverse voltage 600 V
Forward rms current 10 A
Average forward current 4 A
Surge non repetitive forward current tp = 8.3 ms sinusoidal 80 A
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature 175 °C
T
j
Symbol Parameter Maximum Unit
R
th(j-l)
Junction to lead
Terminal length = 10 mm
R
th(j-a)
Table 4. Static electrical characteristics
Junction to ambient
DO-15 25
DO-201AD 20
DO-15 80
DO-201AD 75
°C/W
°C/W
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
I
R
V
F
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
(2)
Forward voltage drop
= 25 °C
T
j
T
= 150 °C - 15 100
j
T
= 25 °C
j
= 150 °C - 0.85 1.05
j
= 150 °C IF = 4 A - 0.90 1.10
T
j
V
R
I
= 3 A
F
= V
RRM
--3
- - 1.30
µA
VT
To evaluate the maximum conduction losses use the following equation:
P = 0.92 x I
Table 5. Dynamic electrical characteristics
Symbol Parameter
t
Reverse recovery time
rr
I
V
2/8 Doc ID 16276 Rev 1
Reverse recovery current
RM
t
Forward recovery time
fr
Forward recovery voltage IF = 4 A, dIF/dt = 100 A/µs - - 7.5 V
FP
F(AV)
+ 0.045 x I
/dt = -50 A/µs
dI
F
dI
/dt = -100 A/µs - 40 55
F
= 25 °C
T
j
T
= 150 °C - 5 6.5
j
F2(RMS)
Test conditions
I
= 1 A, VR = 30 V
F
IF = 4 A, VR = 400 V,
/dt = -100 A/µs
dI
F
= 4 A, dIF/dt = 100 A/µs,
I
F
VFR = 1.1 x V
Fmax
Min. Typ Max. Unit
-5575
-34
ns
A
--130ns
STTH4L06 Characteristics
Figure 1. Conduction losses versus average
current
P(W)
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
δ=0.05
δ=0.1 δ=0.2
I (A)
F(AV)
δ=0.5
δ
=tp/T
δ=1
T
tp
Figure 3. Relative variation of thermal
impedance junction ambient versus
pulse duration (DO-201AD)
Z/R
th(j-a) th(j-a)
1.0
DO-201AD
=10 mm
L
0.9
leads
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Epoxy printed circuit FR4
copper thickness = 35 µm
t (s)
p
Figure 5. Peak reverse recovery current
versus dI
I (A)
RM
20
VR=400V
=150 °C
T
18
j
16
14
12
10
8
6
4
2
0
0 50 100 150 200 250 300 350 400 450 500
IF= 0.25 x I
/dt (typical values)
F
IF= 2 x I
IF= I
F(AV)
IF= 0.5 x I
F(AV)
F(AV)
dI /dt(A/µs)
F
F(AV)
Figure 2. Forward voltage drop versus
forward current
I (A)
FM
50
45
40
35
30
25
20
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5
Tj=150°C
Tj=150°C
(Typical values)
(Typical values)
Tj=150°C
Tj=150°C
(Maximum values)
(Maximum values)
Tj=25°C
(Maximum values)
V (V)
FM
Figure 4. Relative variation of thermal
impedance junction ambient versus
pulse duration (DO-15)
Z/R
th(j-a) th(j-a)
1.0
DO-15
L
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
=10 mm
leads
Single pulse
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Epoxy printed circuit FR4
copper thickness = 35 µm
t (s)
p
Figure 6. Reverse recovery time versus dI
(typical values)
t (ns)
rr
500
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
IF= 0.5 x I
F(AV)
dI /dt(A/µs)
F
IF= I
F(AV)
IF= 2 x I
VR=400V
=150 °C
T
j
F(AV)
F
/dt
Doc ID 16276 Rev 1 3/8
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