ST STTH4L06 User Manual

STTH4L06

Turbo 2 ultrafast high voltage rectifier

Features

■Ultrafast switching

■Low forward voltage drop

■Low leakage current (platinum doping)

■High operating junction temperature

Description

The STTH4L06, which uses ST Turbo 2 600 V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections.

Packaged in DO-201AD and DO-15, this device is intended for use as a free wheeling diode in power supplies and other power switching applications.

A	K
A
	A
	K
K
DO-201AD	DO-15
STTH4L06	STTH4L06Q
Band indicates cathode

Table 1.	Device summary
	IF(AV)		4 A
	VRRM		600 V
	Tj		175 °C
	VF (typ)		0.9 V
	trr (typ)		40 ns

September 2009

Doc ID 16276 Rev 1

1/8

www.st.com

Characteristics

STTH4L06

1

Characteristics

Table 2.

Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

V

IF(RMS)

Forward rms current

10

A

IF(AV)

Average forward current

4

A

IFSM

Surge non repetitive forward current

tp = 8.3 ms sinusoidal

80

A

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Maximum operating junction temperature

175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Maximum

Unit

Rth(j-l)

Junction to lead

DO-15

25

°C/W

Terminal length = 10 mm

DO-201AD

20

Rth(j-a)

Junction to ambient

DO-15

80

°C/W

DO-201AD

75

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I (1)

Reverse leakage current

Tj = 25 °C

V

R

= V

-

-

3

µA

R

Tj= 150 °C

RRM

-

15

100

Tj = 25 °C

IF = 3 A

-

-

1.30

VF(2)

Forward voltage drop

Tj = 150 °C

-

0.85

1.05

V

Tj = 150 °C

IF = 4 A

-

0.90

1.10

1.Pulse test: tp = 5 ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation:

P = 0.92 x IF(AV) + 0.045 x IF2(RMS)

Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

dIF/dt = -50 A/µs

IF = 1

A, VR = 30 V

-

55

75

ns

dIF/dt = -100 A/µs

-

40

55

Tj = 25 °C

I

F

= 4

A, V = 400 V,

-

3

4

IRM

Reverse recovery current

R

A

Tj = 150 °C

dIF/dt = -100 A/µs

-

5

6.5

tfr

Forward recovery time

IF = 4

A, dIF/dt = 100 A/µs,

-

-

130

ns

VFR = 1.1 x VFmax

VFP

Forward recovery voltage

IF = 4

A, dIF/dt = 100 A/µs

-

-

7.5

V

2/8	Doc ID 16276 Rev 1

STTH4L06							Characteristics
Figure 1. Conduction losses versus average						Figure 2. Forward voltage drop versus
	current						forward current
P(W)						50	IFM(A)
5.5
5.0	δ=0.05	δ=0.1	δ=0.2	δ=0.5	δ=1	45
4.5						40
4.0						35	Tj=150°C
3.5
						30	(Maximum values)
3.0						25
2.5
						20
2.0
							Tj=150°C
						15
1.5					T		(Typical values)
							Tj=25°C
1.0						10	(Maximum values)
0.5			IF(AV)(A)	δ=tp/T	tp	5	VFM(V)
0.0						0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.0

0.5

1.0

1.5

2.0

2.5

Figure 3. Relative variation of thermal	Figure 4. Relative variation of thermal
impedance junction ambient versus	impedance junction ambient versus
pulse duration (DO-201AD)	pulse duration (DO-15)

1.0	Zth(j-a)/Rth(j-a)					1.0	Zth(j-a)/Rth(j-a)
0.9	DO-201AD	Epoxy printed circuit FR4				0.9	DO-15	Epoxy printed circuit FR4
	Lleads=10 mm						Lleads=10 mm
0.8		copper thickness = 35 µm				0.8		copper thickness = 35 µm
0.7						0.7
0.6						0.6
0.5						0.5
0.4						0.4
0.3						0.3
0.2						0.2
0.1	Single pulse					0.1	Single pulse
			tp(s)						tp(s)
						0.0
0.0
1.E-01		1.E+00	1.E+01	1.E+02	1.E+03	1.E-01		1.E+00	1.E+01	1.E+02	1.E+03

Figure 5. Peak reverse recovery current	Figure 6. Reverse recovery time versus dIF/dt
versus dIF/dt (typical values)	(typical values)

IRM(A)											trr(ns)
20											500
18	VR=400V										450									VR=400V
	Tj=150 °C					IF = 2 x IF(AV)														Tj=150 °C
16					IF = IF(AV)						400
14				IF = 0.5 x IF(AV)							350
12
											300			IF = 0.5 x IF(AV)
10		IF = 0.25 x IF(AV)									250
																IF = IF(AV)
8											200							IF = 2 x IF(AV)
6											150
4											100
2				dIF/dt(A/µs)							50				dIF/dt(A/µs)
0											0
0	50	100	150	200	250	300	350	400	450	500	0	20	40	60	80	100	120	140	160	180	200

Doc ID 16276 Rev 1

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