ST STTH3R04 User Manual

STTH3R04

Ultrafast recovery diode

Features

■ Negligible switching losses

■ Low forward and reverse recovery times

■ High junction temperature

Description

The STTH3R04 series uses ST's new 400 V planar Pt doping technology. The STTH3R04 is specially suited for switching mode base drive and transistor circuits.

Packaged in axial and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.

KA

DO-15

STTH3R04Q

Band indicates cathode side.

SMB

STTH3R04U

Table 1. Device summary

I

F(AV)

V

RRM

T

j (max)

V

F (typ)

t

rr (typ)

DO-201AD STTH3R04

SMC

STTH3R04S

3 A

400 V

175 °C

0.9 V

18 ns

May 2008 Rev 1 1/10

www.st.com

Characteristics STTH3R04

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(AV)

I

FSM

T

1. On infinite heatsink with 10 mm lead length

Table 3. Thermal parameters

Symbol Parameter Value Unit

Repetitive peak reverse voltage 400 V

Average forward current, δ = 0.5

DO-15 T

DO-201AD T

SMB T

SMC T

= 70 °C

lead

= 80 °C

lead

= 70 °C

lead

= 100 °C

lead

Surge non repetitive forward current tp = 10 ms Sinusoidal 60 A

Storage temperature range -65 to +175 °C

stg

Maximum operating junction temperature

T

j

(1)

3.0 A

175 °C

R

th(j-l)

Junction to lead

Lead length = 10 mm on infinite heatsink

DO-15 25

DO-201AD 22

°C/W

SMB 25

R

th(j-l)

Table 4. Static electrical characteristics

Junction to lead

SMC 17

Symbol Parameter Test conditions Min Typ Max Unit

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Reverse leakage current

R

(2)

Forward voltage drop

F

= 25 °C

j

= 125 °C 5 50

T

j

T

= 25 °C

j

T

= 150 °C 0.9 1.15

j

= V

V

R

= 3.0 A

I

F

RRM

5

1.5

T

To evaluate the conduction losses use the following equation: P = 0.9 x I

+ 0.083 x I

F(AV)

F2(RMS)

µA

VTj = 100 °C 1.0 1.25

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STTH3R04 Characteristics

Table 5. Dynamic characteristics (Tj = 25 °C unless otherwise stated)

Symbol Parameter

Test conditions

I

= 1 A, dIF/dt = -50 A/µs,

F

VR = 30 V, Tj = 25 °C

t

I

RM

t

V

Figure 1. Conduction losses versus

P(W)

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Reverse recovery time

rr

Reverse recovery current

Forward recovery time

fr

Forward recovery voltage

FP

average forward current

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25 °C

V

R

= 3.0 A, dIF/dt = -200 A/µs,

I

F

VR = 320 V, Tj = 125 °C

I

= 3.0 A dIF/dt = 100 A/µs

F

VFR = 1.1 x V

= 3.0 A dIF/dt = 100 A/µs

I

F

δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1

T

=tp/T

I

(A)

F(AV)

δ

, Tj = 25 °C

Fmax

Figure 2. Forward voltage drop versus

forward current

IFM(A)

50

45

40

35

30

25

20

15

10

tp

5

0

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

TJ=150°C

(Maximum values)

TJ=150°C

(Typical values)

Min Typ Max Unit

35

ns

18 25

45.5 A

75 ns

2.5 V

TJ=25°C

(Maximum values)

VFM(V)

Figure 3. Relative variation of thermal

impedance junction to lead versus pulse duration, DO-15 (epoxy FR4, copper thickness = 35 µm)

Z

th(j-l)/Rth(j-l)

1.0

DO-15

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

=10mm

L

leads

Single pulse

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(s)

Figure 4. Relative variation of thermal

impedance junction to ambient versus pulse duration, DO-201AD (epoxy FR4, copper thickness = 35 µm)

Z

th(j-a)/Rth(j-a)

1.0

DO-201AD

=10mm

L

0.9

leads

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(s)

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