ST STTH3R04 User Manual
STTH3R04
Ultrafast recovery diode
Features
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
Description
The STTH3R04 series uses ST's new 400 V
planar Pt doping technology. The STTH3R04 is
specially suited for switching mode base drive and
transistor circuits.
Packaged in axial and surface mount packages,
this device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
KA
DO-15
STTH3R04Q
Band indicates cathode side.
SMB
STTH3R04U
Table 1. Device summary
I
F(AV)
V
RRM
T
j (max)
V
F (typ)
t
rr (typ)
DO-201AD
STTH3R04
SMC
STTH3R04S
3 A
400 V
175 °C
0.9 V
18 ns
May 2008 Rev 1 1/10
www.st.com
Characteristics STTH3R04
1 Characteristics
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
T
1. On infinite heatsink with 10 mm lead length
Table 3. Thermal parameters
Symbol Parameter Value Unit
Repetitive peak reverse voltage 400 V
Average forward current, δ = 0.5
DO-15 T
DO-201AD T
SMB T
SMC T
= 70 °C
lead
= 80 °C
lead
= 70 °C
lead
= 100 °C
lead
Surge non repetitive forward current tp = 10 ms Sinusoidal 60 A
Storage temperature range -65 to +175 °C
stg
Maximum operating junction temperature
T
j
(1)
3.0 A
175 °C
R
th(j-l)
Junction to lead
Lead length = 10 mm
on infinite heatsink
DO-15 25
DO-201AD 22
°C/W
SMB 25
R
th(j-l)
Table 4. Static electrical characteristics
Junction to lead
SMC 17
Symbol Parameter Test conditions Min Typ Max Unit
(1)
I
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
Reverse leakage current
R
(2)
Forward voltage drop
F
= 25 °C
j
= 125 °C 5 50
T
j
T
= 25 °C
j
T
= 150 °C 0.9 1.15
j
= V
V
R
= 3.0 A
I
F
RRM
5
1.5
T
To evaluate the conduction losses use the following equation:
P = 0.9 x I
+ 0.083 x I
F(AV)
F2(RMS)
µA
VTj = 100 °C 1.0 1.25
2/10
STTH3R04 Characteristics
Table 5. Dynamic characteristics (Tj = 25 °C unless otherwise stated)
Symbol Parameter
Test conditions
I
= 1 A, dIF/dt = -50 A/µs,
F
VR = 30 V, Tj = 25 °C
t
I
RM
t
V
Figure 1. Conduction losses versus
P(W)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Reverse recovery time
rr
Reverse recovery current
Forward recovery time
fr
Forward recovery voltage
FP
average forward current
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25 °C
V
R
= 3.0 A, dIF/dt = -200 A/µs,
I
F
VR = 320 V, Tj = 125 °C
I
= 3.0 A dIF/dt = 100 A/µs
F
VFR = 1.1 x V
= 3.0 A dIF/dt = 100 A/µs
I
F
δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1
T
=tp/T
I
(A)
F(AV)
δ
, Tj = 25 °C
Fmax
Figure 2. Forward voltage drop versus
forward current
IFM(A)
50
45
40
35
30
25
20
15
10
tp
5
0
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
TJ=150°C
TJ=150°C
(Maximum values)
(Maximum values)
TJ=150°C
TJ=150°C
(Typical values)
(Typical values)
Min Typ Max Unit
35
ns
18 25
45.5 A
75 ns
2.5 V
TJ=25°C
TJ=25°C
(Maximum values)
(Maximum values)
VFM(V)
Figure 3. Relative variation of thermal
impedance junction to lead versus
pulse duration, DO-15 (epoxy FR4,
copper thickness = 35 µm)
Z
th(j-l)/Rth(j-l)
1.0
DO-15
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
=10mm
L
leads
Single pulse
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
tP(s)
Figure 4. Relative variation of thermal
impedance junction to ambient
versus pulse duration, DO-201AD
(epoxy FR4, copper
thickness = 35 µm)
Z
th(j-a)/Rth(j-a)
1.0
DO-201AD
=10mm
L
0.9
leads
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
tP(s)
3/10
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