The STTH3R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged in DO-201AD, DO-15, and SMC, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
K
K
A
A
DO-201AD
STTH3R02
K
STTH3R02S
K
K
SMC
KA
A
A
DO-15
STTH3R02Q
A
Order codes
Part NumberMarking
STTH3R02STTH3R02
STTH3R02RLSTTH3R02
STTH3R02QSTTH3R02
STTH3R02QRLSTTH3R02
STTH3R02S3R2S
October 2006 Rev 21/9
www.st.com
CharacteristicsSTTH3R02
1 Characteristics
Table 1.Absolute ratings (limiting values at T
= 25° C, unless otherwise specified)
j
SymbolParameterValueUnit
V
I
RRM
FRM
Repetitive peak reverse voltage200V
Repetitive peak forward current
(1)
tp = 5 µs, F = 5 kHz
110A
DO-201AD / DO-1570
I
F(RMS)
I
F(AV)
I
FSM
T
T
1. On infinite heatsink with 10 mm lead length
Table 2.Thermal parameters
RMS forward current
SMC70
DO-15 T
Average forward current, δ = 0.5
SMC T
= 50° C
lead
lead
= 110° C
c
= 90° C
Surge non repetitive forward current tp = 10 ms Sinusoidal75A
Storage temperature range-65 to + 175° C
stg
Maximum operating junction temperature
T
j
Maximum lead temperature for soldering during 10 s at 4 mm from case230° C
L
(1)
3ADO-201AD T
175° C
SymbolParameterValueUnit
DO-1545
R
th(j-l)
Junction to leadLead Length = 10 mm on infinite heatsink
A
° C/WDO-201AD30
R
th(j-c)
Table 3.Static electrical characteristics
Junction to caseSMC20
SymbolParameterTest conditionsMin.TypMax.Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25° C
j
= 125° C330
T
j
= 25° CIF = 9 A1.20
T
j
T
= 25° C
j
Tj = 100° C0.760.85
= 150° C0.700.80
T
j
V
R
I
= 3 A
F
= V
RRM
0.891.0
3
T
To evaluate the conduction losses use the following equation:
P = 0.68 x I
F(AV)
+ 0.04 I
F2(RMS)
µA
V
2/9
STTH3R02Characteristics
Table 4.Dynamic characteristics
SymbolParameter
t
rr
I
RM
t
fr
V
FP
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
Test conditions
I
= 1 A, dIF/dt = -50 A/µs,
F
VR = 30 V, Tj = 25° C
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25° C
V
R
= 3 A, dIF/dt = -200 A/µs,
I
F
VR = 160 V, Tj = 125° C
I
= 3 A, dIF/dt = 100 A/µs
F
VFR = 1.1 x V
, Tj = 25° C
Fmax
IF = 3 A, dIF/dt = 100 A/µs,
= 25° C
T
j
Min.TypMax.Unit
2430
1620
3.54.5A
40ns
1.9V
Figure 1.peak current versus duty cycleFigure 2.Forward voltage drop versus
forward current (typical values)
IM(A)
100
80
60
δ
P = 10WP = 10 W
P = 5WP = 5 W
P = 3WP = 3 W
40
20
0
0.0 0.1 0.2 0.3 0.4 0.5 0.60.7 0.8 0.9 1.0
T
T
I
I
M
M
=tp/T
=tp/T
d
δ
tp
tp
IFM(A)
50
40
30
20
10
0
0.00.51.01.52.0
Tj=150°C
Tj=25°C
VFM(V)
ns
Figure 3.Forward voltage drop versus
forward current (maximum values)
IFM(A)
50
40
30
20
10
0
0.00.51.01.52.0
Tj=150°C
Tj=25°C
VFM(V)
Figure 4.Relative variation of thermal
impedance junction to ambient
versus pulse duration - DO-201AD
(Epoxy printed circuit board FR4,
e
=35µm)
CU
Z
th(j-a)/Rth(j-a)
1.0
DO-201AD
L
=10mm
0.9
leads
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-011.E+001.E+011.E+021.E+03
3/9
tP(s)
CharacteristicsSTTH3R02
Q
Figure 5.Relative variation of thermal
impedance junction to ambient
versus pulse duration - DO-15
(Epoxy printed circuit board FR4,
e
=35µm)
CU
Z
th(j-a)/Rth(j-a)
1.0
DO-15
L
=10mm
0.9
leads
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-011.E+001.E+011.E+021.E+03
tP(s)
Figure 7.Junction capacitance versus
reverse applied voltage (typical
values)
C(pF)
100
10
1
1101001000
V
osc
F=1MHz
=30mV
Tj=25°C
VR(V)
RMS
Figure 6.Relative variation of thermal
impedance junction to ambient
versus pulse duration - SMC
(Epoxy printed circuit board FR4,
e
=35µm)
CU
Z
th(j-a)/Rth(j-a)
1.0
SMC
S
=1cm²
0.9
cu
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-031.E-021.E-011.E+001.E+011.E+021.E+03
tP(s)
Figure 8.Reverse recovery charges versus
dI
/dt (typical values)
F
(nC)
RR
80
IF=3A
V
=160V
70
R
60
50
40
30
20
10
0
101001000
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
Figure 9.Reverse recovery time versus dIF/dt
60
50
40
30
20
10
0
101001000
(typical values)
tRR(ns)
Tj=125°C
Tj=25°C
IF=3A
V
=160V
R
dIF/dt(A/µs)
Figure 10. Peak reverse recovery current
versus dI
IRM(A)
8
IF=3A
V
=160V
R
7
6
5
4
3
2
1
0
101001000
/dt (typical values)
F
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
4/9
STTH3R02Ordering information scheme
Q
/Q
Figure 11. Dynamic parameters versus
junction temperature
]
RR;IRM[Tj
1.4
IF=3A
VR=160V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
255075100125150
RR;IRM[Tj
I
RM
=125°C]
Q
RR
Tj(°C)
Figure 13. Thermal resistance versus copper
surface under each lead for SMC
(Epoxy printed circuit board FR4,
e
= 35µm)
CU
R
(°C/W)
th(j-a)
100
80
60
40
20
0
0.0 0.51.0 1.5 2.02.5 3.03.5 4.0 4.55.0
SCU(cm²)
SMC
Figure 12. Thermal resistance junction to
ambient versus copper surface
under each lead for DO-15 and
DO-201AD (Epoxy printed circuit
board FR4, e
R
(°C/W)
th(j-a)
100
90
80
70
60
50
40
30
20
10
0
0.0 0.51.0 1.52.0 2.5 3.03.5 4.04.5 5.0
= 35µm)
CU
DO-15
DO-201AD
SCu(cm²)
Figure 14. Thermal resistance versus lead
length for DO-201AD package
Rth(°C/W)
100
90
80
70
60
50
40
30
20
10
0
5 10152025
R
th(j-a)
R
th(j-l)
L
leads
DO-201AD
(mm)
2 Ordering information scheme
STTH 3 R 02 XXX
Ultrafast switching diode
Average forward current
3 = 3 A
Model R
Repetitive peak reverse voltage
02 = 200 V
Packag e
Blank = DO-201 in Ammopack
RL = DO-201 in Tape and reel
Q = DO-15 in Ammopack
QRL = DO-15 in Tape and reel
S= SMC in Tape and reel
5/9
Package informationSTTH3R02
3 Package information
●Epoxy meets UL94, V0
●Cooling method: by conduction (C)
Table 5.DO-201AD Dimensions
Dimensions
BB
Note 1Note 1
ØD
Table 6.DO-15 dimensions
CC
D
A
EE
Note 2
ØC
A
B
Ref.
MillimetersInches
Min.Max.Min.Max.
A9.500.374
B25.401.000
C5.300.209
D1.300.051
E1.25 0.049
Notes 1 - The lead diameter ø D is not
controlled over zone E
2 - The minimum length which must stay
straight between the right angles after
bending is 0.59"(15mm)
Dimensions
Ref.
MillimetersInches
Min.Max.Min.Max.
A6.056.750.2380.266
B2.953.530.1160.139
C26311.0241.220
6/9
D0.710.880.0280.035
STTH3R02Package information
Table 7.SMC dimensions
Dimensions
Ref.
E1
D
E
A1
C
LE2
A2
b
Figure 15. SMC footprint (dimensions in mm)
2.20
4.25
MillimetersInches
Min.Max.Min.Max.
A11.902.450.0750.096
A20.050.200.0020.008
b2.903.20.1140.126
c0.150.410.0060.016
E7.758.150.3050.321
E16.607.150.2600.281
E24.404.700.1730.185
D5.556.250.2180.246
L0.751.600.0300.063
2.20
3.30
8.65
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
7/9
Ordering informationSTTH3R02
4 Ordering information
Part NumberMarkingPackageWeightBase qty Delivery mode
STTH3R02STTH3R02DO-201AD1.16 g600Ammopack
STTH3R02RLSTTH3R02DO-201AD1.16 g1900Tape and reel
STTH3R02QSTTH3R02DO-150.4 g1000Ammopack
STTH3R02QRLSTTH3R02DO-150.4 g6000Tape and reel
STTH3R02S3R2SSMC0.243 g2500Tape and reel
5 Revision history
DateRevisionDescription of Changes
03-May-20061First issue
10-Oct-20062Added SMC package
8/9
STTH3R02
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