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Main product characteristics
STTH3R02
Ultrafast recovery diode
I
F(AV)
V
RRM
T
(max) 175° C
j
(typ) 0.7 V
V
F
(typ) 16 ns
t
rr
3 A
200 V
Features and benefits
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
Description
The STTH3R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged in DO-201AD, DO-15, and SMC, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
K
K
A
A
DO-201AD
STTH3R02
K
STTH3R02S
K
K
SMC
KA
A
A
DO-15
STTH3R02Q
A
Order codes
Part Number Marking
STTH3R02 STTH3R02
STTH3R02RL STTH3R02
STTH3R02Q STTH3R02
STTH3R02QRL STTH3R02
STTH3R02S 3R2S
October 2006 Rev 2 1/9
www.st.com
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Characteristics STTH3R02
1 Characteristics
Table 1. Absolute ratings (limiting values at T
= 25° C, unless otherwise specified)
j
Symbol Parameter Value Unit
V
I
RRM
FRM
Repetitive peak reverse voltage 200 V
Repetitive peak forward current
(1)
tp = 5 µs, F = 5 kHz
110 A
DO-201AD / DO-15 70
I
F(RMS)
I
F(AV)
I
FSM
T
T
1. On infinite heatsink with 10 mm lead length
Table 2. Thermal parameters
RMS forward current
SMC 70
DO-15 T
Average forward current, δ = 0.5
SMC T
= 50° C
lead
lead
= 110° C
c
= 90° C
Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A
Storage temperature range -65 to + 175 ° C
stg
Maximum operating junction temperature
T
j
Maximum lead temperature for soldering during 10 s at 4 mm from case 230 ° C
L
(1)
3ADO-201AD T
175 ° C
Symbol Parameter Value Unit
DO-15 45
R
th(j-l)
Junction to lead Lead Length = 10 mm on infinite heatsink
A
° C/WDO-201AD 30
R
th(j-c)
Table 3. Static electrical characteristics
Junction to case SMC 20
Symbol Parameter Test conditions Min. Typ Max. Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25° C
j
= 125° C 3 30
T
j
= 25° C IF = 9 A 1.20
T
j
T
= 25° C
j
Tj = 100° C 0.76 0.85
= 150° C 0.70 0.80
T
j
V
R
I
= 3 A
F
= V
RRM
0.89 1.0
3
T
To evaluate the conduction losses use the following equation:
P = 0.68 x I
F(AV)
+ 0.04 I
F2(RMS)
µA
V
2/9
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STTH3R02 Characteristics
Table 4. Dynamic characteristics
Symbol Parameter
t
rr
I
RM
t
fr
V
FP
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
Test conditions
I
= 1 A, dIF/dt = -50 A/µs,
F
VR = 30 V, Tj = 25° C
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25° C
V
R
= 3 A, dIF/dt = -200 A/µs,
I
F
VR = 160 V, Tj = 125° C
I
= 3 A, dIF/dt = 100 A/µs
F
VFR = 1.1 x V
, Tj = 25° C
Fmax
IF = 3 A, dIF/dt = 100 A/µs,
= 25° C
T
j
Min. Typ Max. Unit
24 30
16 20
3.5 4.5 A
40 ns
1.9 V
Figure 1. peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values)
IM(A)
100
80
60
δ
P = 10 WP = 10 W
P = 5 WP = 5 W
P = 3 WP = 3 W
40
20
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
T
I
I
M
M
=tp/T
=tp/T
d
δ
tp
tp
IFM(A)
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0
Tj=150°C
Tj=25°C
VFM(V)
ns
Figure 3. Forward voltage drop versus
forward current (maximum values)
IFM(A)
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0
Tj=150°C
Tj=25°C
VFM(V)
Figure 4. Relative variation of thermal
impedance junction to ambient
versus pulse duration - DO-201AD
(Epoxy printed circuit board FR4,
e
=35µm)
CU
Z
th(j-a)/Rth(j-a)
1.0
DO-201AD
L
=10mm
0.9
leads
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
3/9
tP(s)