ST STTH3R02 User Manual

Main product characteristics

STTH3R02

Ultrafast recovery diode

I

F(AV)

V

RRM

T

(max) 175° C

j

(typ) 0.7 V

V

F

(typ) 16 ns

t

rr

3 A

200 V

Features and benefits

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery times

■ High junction temperature

Description

The STTH3R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits.

Packaged in DO-201AD, DO-15, and SMC, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.

K

A

DO-201AD STTH3R02

K

STTH3R02S

K

SMC

KA

A

DO-15

STTH3R02Q

A

Order codes

Part Number Marking

STTH3R02 STTH3R02

STTH3R02RL STTH3R02

STTH3R02Q STTH3R02

STTH3R02QRL STTH3R02

STTH3R02S 3R2S

October 2006 Rev 2 1/9

www.st.com

Characteristics STTH3R02

1 Characteristics

Table 1. Absolute ratings (limiting values at T

= 25° C, unless otherwise specified)

j

Symbol Parameter Value Unit

V

I

RRM

FRM

Repetitive peak reverse voltage 200 V

Repetitive peak forward current

(1)

tp = 5 µs, F = 5 kHz

110 A

DO-201AD / DO-15 70

I

F(RMS)

I

F(AV)

I

FSM

T

1. On infinite heatsink with 10 mm lead length

Table 2. Thermal parameters

RMS forward current

SMC 70

DO-15 T

Average forward current, δ = 0.5

SMC T

= 50° C

lead

= 110° C

c

= 90° C

Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A

Storage temperature range -65 to + 175 ° C

stg

Maximum operating junction temperature

T

j

Maximum lead temperature for soldering during 10 s at 4 mm from case 230 ° C

L

(1)

3ADO-201AD T

175 ° C

Symbol Parameter Value Unit

DO-15 45

R

th(j-l)

Junction to lead Lead Length = 10 mm on infinite heatsink

A

° C/WDO-201AD 30

R

th(j-c)

Table 3. Static electrical characteristics

Junction to case SMC 20

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 3 30

T

j

= 25° C IF = 9 A 1.20

T

j

T

= 25° C

j

Tj = 100° C 0.76 0.85

= 150° C 0.70 0.80

T

j

V

R

I

= 3 A

F

= V

RRM

0.89 1.0

3

T

To evaluate the conduction losses use the following equation: P = 0.68 x I

F(AV)

+ 0.04 I

F2(RMS)

µA

V

2/9

STTH3R02 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

Test conditions

I

= 1 A, dIF/dt = -50 A/µs,

F

VR = 30 V, Tj = 25° C

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 3 A, dIF/dt = -200 A/µs,

I

F

VR = 160 V, Tj = 125° C

I

= 3 A, dIF/dt = 100 A/µs

F

VFR = 1.1 x V

, Tj = 25° C

Fmax

IF = 3 A, dIF/dt = 100 A/µs,

= 25° C

T

j

Min. Typ Max. Unit

24 30

16 20

3.5 4.5 A

40 ns

1.9 V

Figure 1. peak current versus duty cycle Figure 2. Forward voltage drop versus

forward current (typical values)

IM(A)

100

80

60

δ

P = 10 WP = 10 W

P = 5 WP = 5 W

P = 3 WP = 3 W

40

20

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

T

I

M

=tp/T

d

δ

tp

IFM(A)

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0

Tj=150°C

Tj=25°C

VFM(V)

ns

Figure 3. Forward voltage drop versus

forward current (maximum values)

IFM(A)

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0

Tj=150°C

Tj=25°C

VFM(V)

Figure 4. Relative variation of thermal

impedance junction to ambient versus pulse duration - DO-201AD (Epoxy printed circuit board FR4, e

=35µm)

CU

Z

th(j-a)/Rth(j-a)

1.0

DO-201AD

L

=10mm

0.9

leads

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

3/9

tP(s)