ST STTH3L06 User Manual
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 1: Main Product Characteristics
I
F(AV)
V
I
(max)
R
V
F
(typ)
t
rr
RRM
T
j
(typ)
3 A
600 V
100 µA
175°C
0.85 V
60 ns
STTH3L06
KA
K
A
NC
FEATURES AND BENEFITS
■ Ultrafast switching
■ Low forward voltage drop
■ Low thermal resistance
■ Low leakage current (platinium doping)
DESCRIPTION
The STTH3L06, which is using ST Turbo 2 600V
technology, is specially suited as boost diode in
discontinuous or critical mode power factor corrections.
This device is intended for use as a free wheeling
diode in power supplies and other power switching
applications.
Table 2: Order Codes
Part Number Marking
STTH3L06 STTH3L06
STTH3L06RL STTH3L06
STTH3L06B STTH3L06B
STTH3L06B-TR STTH3L06B
STTH3L06U 3L6U
STTH3L06S S06
DO-201AD
STTH3L06
SMB
STTH3L06U
DPAK
STTH3L06B
SMC
STTH3L06S
September 2005 REV. 3
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STTH3L06
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
T
Table 4: Thermal Parameters
Symbol Parameter Maximum Unit
R
th(j-l)
R
th(j-a)
Repetitive peak reverse voltage 600 V
RMS forward current DO-201AD / SMB / SMC 10 A
DPAK 6
Average forward current
δ = 0.5
DO-201AD Tl = 100°C 3 A
DPAK Tl = 155°C
SMB Tl = 80°C
SMC Tl = 100°C
Surge non repetitive forward current DO-201AD tp = 10ms
SMB / SMC 60
sinusoidal
70 A
DPAK 40
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature 175 °C
j
Junction to lead DO-201AD L = 10 mm 20 °C/W
DPAK 5.5
SMB 25
SMC 20
Junction to ambient (see fig. 13) DO-201AD L = 10 mm 75 °C/W
Table 5: Static Electrical Characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
V
To evaluate the conduction losses use the following equation: P = 0.89 x I
Reverse leakage current Tj = 25°C VR = V
R
T
= 150°C 15 100
j
Forward voltage drop Tj = 25°C IF = 3A 1.3 V
F
= 150°C 0.85 1.05
T
j
F(AV)
RRM
+ 0.055 I
F2(RMS)
3µA
Table 6: Dynamic Characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
t
Reverse recovery
rr
Tj = 25°C IF = 1A dIF/dt = -50 A/µs VR =30V 60 85 ns
time
t
V
Forward recovery
fr
time
Forward recovery
FP
Tj = 25°C IF = 3A dIF/dt = 100 A/µs
= 1.1 x V
V
FR
Fmax
IF = 3A dIF/dt = 100 A/µs 7.5 V
100 ns
voltage
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STTH3L06
Figure 1: Conduction losses versus average
current
P(W)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
printed circuit FR4, L
Z/R
th(j-a) th(j-a)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
SMB
S = 1cm
Cu
SMC
S = 1cm
Cu
2
2
= 10mm, SCU=1cm2)
leads
DPAK
2
S = 1cm
Cu
DO-201AD
L = 10mm
leads
t (s)
p
Figure 2: Forward voltage drop versus forward
current
I (A)
FM
100.0
10.0
1.0
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
(maximum values)
T =150°C
j
(typical values)
T =150°C
j
V (V)
FM
T =25°C
j
(maximum values)
Figure 4: Peak reverse recovery current
versus dI
I (A)
RM
20
V =400V
R
T =125°C
j
18
16
14
12
10
8
6
4
2
0
0 50 100 150 200 250 300 350 400 450 500
/dt (typical values)
F
I=I
FF(AV)
I =0.5 x I
F F(AV)
I =0.25 x I
FF(AV)
dI /dt(A/µs)
F
I =2 x I
F F(AV)
Figure 5: Reverse recovery time versus dI
(typical values)
t (ns)
rr
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160 180 200
I =2 x I
F F(AV)
I=I
F F(AV)
dI /dt(A/µs)
F
I =0.5 x I
F F(AV)
V =400V
R
T =125°C
j
/dt
F
Figure 6: Reverse recovery charges versus dIF/
dt (typical values)
Q (nC)
rr
500
V =400V
R
T =125°C
j
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
I =2 x I
FF(AV)
I=I
FF(AV)
I =0.5 x I
FF(AV)
dI /dt(A/µs)
F
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