ST STTH312 User Manual

STTH312

Ultrafast recovery - 1200 V diode

Main product characteristics

IF(AV)	3 A
VRRM	1200 V
Tj	175° C
VF (typ)	1.15 V
trr (typ)	55 ns

Features and benefits

■Ultrafast, soft recovery

■Very low conduction and switching losses

■High frequency and/or high pulsed current operation

■High reverse voltage capability

■High junction temperature

Description

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.

Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.

A K

K

A

NC

DPAK

STTH312B

Order codes

Part Number	Marking
STTH312B	STTH312B
STTH312B-TR	STTH312B

March 2006

Rev 1

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www.st.com

Characteristics	STTH312

1

Characteristics

Table 1.

Absolute ratings (limiting values at 25° C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

1200

V

IF(RMS)

RMS forward current

6

A

IF(AV)

Average forward current, δ = 0.5

Tc = 150° C

3

A

IFRM

Repetitive peak forward current

tp = 5 µs, F = 5 kHz square

35

A

IFSM

Surge non repetitive forward current

tp = 10 ms Sinusoidal

35

A

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Maximum operating junction temperature

175

°C

Table 2.

Thermal parameter

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

3.8

°C/W

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

I (1)

Reverse leakage current

Tj

= 25° C

V

= V

10

µA

R

R

Tj = 125° C

RRM

2

100

Tj = 25° C

2

VF(2)

Forward voltage drop

Tj = 125° C

IF = 3 A

1.20

1.7

V

Tj = 150° C

1.15

1.65

1.Pulse test: tp = 5 ms, δ < 2 %

2.Pulse test: tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation: P = 1.4 x IF(AV) + 0.1 IF2(RMS)

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STTH312					Characteristics
Table 4.		Dynamic characteristics
Symbol		Parameter	Test conditions	Min.	Typ	Max.	Unit
			IF = 1 A, dIF/dt = -50 A/µs,			115
trr		Reverse recovery time	VR = 30 V, Tj = 25° C				ns
			IF = 1 A, dIF/dt = -100 A/µs,		55	80
			VR = 30 V, Tj = 25° C
IRM		Reverse recovery current	IF = 3 A, dIF/dt = -200 A/µs,		9.5	14	A
			VR = 600 V, Tj = 125° C
S		Softness factor	IF = 3 A, dIF/dt = -200 A/µs,		2
			VR = 600 V, Tj = 125° C
tfr		Forward recovery time	IF = 3 A dIF/dt = 50 A/µs			350	ns
			VFR = 1.5 x VFmax, Tj = 25° C
VFP		Forward recovery voltage	IF = 3 A, dIF/dt = 50 A/µs,		12		V
			Tj = 25° C
Figure 1. Conduction losses versus			Figure 2. Forward voltage drop versus
		average current	forward current

P(W)								IFM(A)
7								50
6			δ = 0.1	δ = 0.2		δ = 0.5		45
								40					Tj=150°C
5		δ = 0.05										(maximum values)
							δ = 1	35
								30
4											Tj=150°C
											(typical values)
								25							Tj=25°C
3															(maximum values)
								20
2								15
							T
								10
1								5
			IF(AV)(A)			=tp/T	tp						VFM(V)
0						δ		0
0.0	0.5	1.0	1.5	2.0	2.5	3.0	3.5	0.0	0.5	1.0	1.5	2.0	2.5	3.0	3.5	4.0	4.5	5.0

Figure 3. Relative variation of thermal	Figure 4. Peak reverse recovery current
impedance junction to case	versus dIF/dt (typical values)
versus pulse duration

1.0	Zth(j-c)/Rth(j-c)			24	IRM(A)
0.9				22		VR=600V
						Tj=125°C
												IF=2 x IF(AV)
0.8				20
				18
0.7				16
									IF=IF(AV)
0.6				14
0.5				12		IF=0.5 x IF(AV)
0.4				10
0.3	Single pulse			8
				6
0.2				4
0.1			tp(s)	2					dIF/dt(A/µs)
0.0				0
1.E-03		1.E-02	1.E-01	1.E+00	0	50	100	150	200	250	300	350	400	450	500

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