ST STTH312 User Manual

STTH312

Ultrafast recovery - 1200 V diode

Main product characteristics

I

F(AV)

V

RRM

T

j

V

(typ) 1.15 V

F

(typ) 55 ns

t

rr

3 A

1200 V

175° C

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

Description

The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.

Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.

KA

K

A

NC

DPAK

STTH312B

Order codes

Part Number Marking

STTH312B STTH312B

STTH312B-TR STTH312B

The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.

March 2006 Rev 1 1/8

www.st.com

8

Characteristics STTH312

1 Characteristics

Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

Table 2. Thermal parameter

Repetitive peak reverse voltage 1200 V

RMS forward current 6 A

Average forward current, δ = 0.5 Tc = 150° C 3 A

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 35 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 35 A

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature 175 °C

j

Symbol Parameter Value Unit

R

th(j-c)

Table 3. Static electrical characteristics

Junction to case 3.8 °C/W

Symbol Parameter Test conditions Min. Typ Max. Unit

T

= 25° C

(1)

I

R

Reverse leakage current

j

Tj = 125° C 2 100

= V

V

R

RRM

10

µA

(2)

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Forward voltage drop

F

= 380 µs, δ < 2 %

p

To evaluate the conduction losses use the following equation: P = 1.4 x I

= 25° C

T

j

I

= 3 A

F

2

Tj = 150° C 1.15 1.65

+ 0.1 I

F(AV)

VTj = 125° C 1.20 1.7

F2(RMS)

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STTH312 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

Forward recovery time

t

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

7

δ = 0.2

6

5

4

3

2

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.5

δ

=tp/T

Figure 3. Relative variation of thermal

impedance junction to case
versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

Single pulse

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Test conditions

IF = 1 A, dIF/dt = -50 A/µs,
V

= 30 V, Tj = 25° C

R

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 3 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125° C

V

R

= 3 A, dIF/dt = -200 A/µs,

I

F

V

= 600 V, Tj = 125° C

R

= 3 A dIF/dt = 50 A/µs

I

F

= 1.5 x V

V

FR

I

= 3 A, dIF/dt = 50 A/µs,

F

T

= 25° C

j

, Tj = 25° C

Fmax

Figure 2. Forward voltage drop versus

I (A)

FM

50

45

40

δ = 1

T

tp

35

30

25

20

15

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Figure 4. Peak reverse recovery current

I (A)

RM

24

V =600V

R

22

T=125°C

j

20

18

16

14

12

I =0.5 x I

10

F F(AV)

8

6

4

2

0

0 50 100 150 200 250 300 350 400 450 500

Min. Typ Max. Unit

forward current

T=150°C

j

(maximum values)

T=150°C

j

(typical values)

versus dI

/dt (typical values)

F

I=I

FF(AV)

dI /dt(A/µs)

F

55 80

9.5 14 A

2

12 V

T=25°C

j

(maximum values)

V (V)

FM

I =2 x I

FF(AV)

115

ns

350 ns

3/8