ST STTH30R04 User Manual

STTH30R04

Ultrafast recovery diode

Main product characteristics				A			K
IF(AV)		30 A
VRRM		400 V
Tj		175° C		A
VF (typ)		0.97 V
				K			A
trr		24 ns					K
				TO-220AC			DO-247
Features and benefits				STTH30R04D			STTH30R04W

		Ultrafast switching		K	K
	■
	■	Low reverse current				A
	■	Low thermal resistance	A	A	A	A
						K

	■ Reduces switching and conduction losses		D2PAK	DOP3I
	■	High junction temperature	STTH30R04G	STTH30R04PI
	■	Insulated package: DOP3I
			Note: D2PAK - 2 anode terminals must be shorted on
		– Electrical insulation = 2500 VRMS
			board.
		Package capacitance = 12 pF

Description

The compromise-free, high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.

Order codes

Part Number	Marking
STTH30R04D	STTH30R04D
STTH30R04G	STTH30R04G
STTH30R04G-TR	STTH30R04G
STTH30R04W	STTH30R04W
STTH30R04PI	STTH30R04PI

Table 1.	Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol		Parameter			Value	Unit
VRRM	Repetitive peak reverse voltage				400	V
IF(RMS)	RMS forward current				50	A
IF(AV)	Average forward current, δ = 0.5		TO-220AC / DO-247 / D2PAK	Tc = 120° C	30	A
			DOP3I	Tc = 90° C
IFRM	Repetitive peak forward current		tp = 10 µs, F = 1 kHz		500	A
IFSM	Surge non repetitive forward current		tp = 10 ms Sinusoidal		300	A
Tstg	Storage temperature range				-65 to +175	° C
Tj	Maximum operating junction temperature range				-40 to +175	° C
March 2007			Rev 1			1/10
					www.st.com

Characteristics	STTH30R04

1 Characteristics

Table 2.	Thermal parameters
Symbol		Parameter		Value	Unit
Rth(j-c)		Junction to case	TO-220AC / DO-247 / D2PAK	1.15	°C/W
			DOP3I	1.9

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

Tj

= 25° C

15

I

(1)

Reverse leakage current

T

= 100° C

V

R

= V

RRM

3

30

µA

R

j

Tj

= 125° C

15

150

Tj

= 25° C

IF = 15 A

1.26

Tj

= 150° C

0.8

1.0

V

(2)

Forward voltage drop

T = 25° C

1.45

V

F

j

Tj = 100° C

IF = 30 A

1.3

Tj

= 150° C

0.97

1.2

1.Pulse test: tp = 5 ms, δ < 2 %

2.Pulse test: tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation:

P = 0.9 x IF(AV) + 0.01 x IF2(RMS)

Table 4.	Dynamic characteristics
Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
		IF = 1 A, dIF/dt = -200 A/µs,		24	35
		VR = 30 V, Tj = 25° C
trr	Reverse recovery time	IF = 1 A, dIF/dt = -15 A/µs,		78	100	ns
		VR = 30 V, Tj = 25° C
		IF = 1 A, IR = 1 A,			50
		IRR = 0.25 A, Tj = 25° C
IRM	Reverse recovery current	IF = 30 A, dIF/dt = -200 A/µs,		10	14	A
		VR = 160 V, Tj = 125° C
tfr	Forward recovery time	IF = 30 A dIF/dt = 100 A/µs			500	ns
		VFR = 1.1 x VFmax, Tj = 25° C
VFP	Forward recovery voltage	IF = 30 A dIF/dt = 100 A/µs		2.9		V
		VFR = 1.1 x VFmax, Tj = 25° C

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STTH30R04	Characteristics
Figure 1. Conduction losses versus	Figure 2. Forward voltage drop versus
average current	forward current

50	P(W)
45	δ=0.5	δ=1
	δ=0.2
40	δ=0.1
35	δ=0.05

30

25

20

15
10							T
5				IF(AV)(A)			δ=tp/T	tp
0
0	5	10	15	20	25	30	35	40

I	(A)
FM
200
180
160					TJ=150°C
					(Maximum values)
140
120
100					TJ=150°C
				(Typical values)
80
60
40										TJ=25°C
20									(Maximum values)
												VFM(V)
0
0.0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0	2.2	2.4	2.6

Figure 3. Relative variation of thermal	Figure 4. Peak reverse recovery current
impedance junction to case	versus dIF/dt (typical values)
versus pulse duration

Zth	/Rth	(j-c)			I	(A)
(j-c)
1.0					RM
					22
Single pulse					20	IF= 30 A
TO-220AC
						VR=320 V
D²PAK					18
DO-247
DOP-3I					16
					14
					12
					10	Tj=125° C
					8
					6	Tj=25° C
					4
			tp(s)		2		dIF/dt(A/µs)
					0
0.1
1.E-03		1.E-02	1.E-01	1.E+00	10	100	1000

Figure 5. Reverse recovery time versus	Figure 6. Reverse recovery charges versus
dIF/dt (typical values)	dIF/dt (typical values)

t	RR	(ns)		Q	(nC)
180				750	RR
160			IF= 30 A	700	IF= 30 A
			VR=320 V	650	VR=320 V
140				600
				550
120				500	Tj=125° C
				450
100		Tj=125° C
				400
80				350
				300
60				250
40		Tj=25° C		200	Tj=25° C
				150
20				100
				50		dIF/dt(A/µs)
		dIF/dt(A/µs)
0				0
10		100	1000	10	100	1000

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