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Features
■ Suited for DC/DC converts
■ Low losses
■ High T
■
■ High energy avalanche capability
■ 1 mm package thickness
■ ECOPACK
J
High surge current capability
®
2 compliant component
STTH30R02DJF
Ultrafast recovery diode high efficiency
Datasheet − production data
A(1)
K
A(2)
K
K
Description
High performance diode suited for high frequency
DC to DC converters. Packaged in PowerFLAT™
5x6, this device is intended for use in low voltage
high frequency inverters.
A(2)
A(1)
PowerFLAT 5x6
STTH30R02DJF
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
T
j
V
(typ) 0.8 V
F
(typ) 27 ns
t
rr
A(2)
A(1)
30 A
200 V
175 °C
TM: PowerFLAT is a trademark of STMicroelectronics
March 2012 Doc ID 022761 Rev 1 1/9
This is information on a product in full production.
www.st.com
9
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Characteristics STTH30R02DJF
1 Characteristics
Table 2. Absolute ratings (limiting values with anode terminals short-circuited)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
T
Table 3. Thermal parameter
Repetitive peak reverse voltage 200 V
RRM
Forward rms current 45 A
Average forward current
Surge non repetitive forward current
FSM
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature 175 °C
T
j
Tc = 105 °C
δ = 0.5
= 10 ms
t
p
sinusoidal
30 A
300 A
Symbol Parameter Maximum Unit
R
Table 4. Static electrical characteristics (anode terminals short-circuited)
Junction to case 2.0 °C/W
th(j-c)
Symbol Parameter Test conditions Min. Typ Max. Unit
(1)
I
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
R
(2)
Forward voltage drop
F
T
= 25 °C
j
Tj = 125 °C 10 100
Tj = 25 °C
= 200V
V
R
11.15
IF = 30 A
= 150 °C 0.80 0.95
T
j
10
µA
V
To evaluate the maximum conduction losses use the following equation:
P = 0.77 x I
2/9 Doc ID 022761 Rev 1
F(AV)
+ 0.006 I
F2(RMS)
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STTH30R02DJF Characteristics
Table 5. Recovery characteristics
Symbol Parameter
Reverse recovery time Tj = 25 °C
t
rr
I
Reverse recovery current
RM
S
Table 6. Turn-on switching characteristics
Reverse recovery
factor
softness factor
Reverse recovery charges 140 nC
Q
rr
Tj = 125 °C
Symbol Parameter
Test conditions
= 1 A
I
F
Vr = 30 V
/dt = 100 A/µs
dI
F
I
= 1 A
F
= 30 V
V
r
/dt = 50 A/µs
dI
F
I
= 30 A,
F
/dt = - 200 A/µs,
dI
F
= 160 V
V
CC
Test conditions
Min. Typ Max. Unit
27 35
ns
38 50
6.0 8.0 A
0.3 -
Min. Typ Max. Unit
t
Forward recovery time
fr
Tj = 25 °C
V
Forward recovery voltage 2.3 3.5 V
FP
IF = 30 A
dIF/dt = 200 A/µs
V
Figure 1. Average forward power dissipation
versus average forward current
P
(W)
F(AV)
40
35
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35 4
δ
=0.05
δ
=0.1
=0.2
δ
I
(A)
F(AV)
=0.5 =1
δ
=Tp/T
δ
δ
T
tp
= 1.3 V
FR
Figure 2. Forward voltage drop versus
forward current
I
FM
100.0
Tj=150 °C
(Typical values)
10.0
1.0
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
Tj=150 °C
(Maximum values)
(Maximum values)
300 ns
Tj=25 °C
VFM(V)
Doc ID 022761 Rev 1 3/9