ST STTH30R02DJF User Manual

Features

■ Suited for DC/DC converts

■ Low losses

■ High T

■

■ High energy avalanche capability

■ 1 mm package thickness

■ ECOPACK

J

High surge current capability

®

2 compliant component

STTH30R02DJF

Ultrafast recovery diode high efficiency

Datasheet − production data

A(1)

K

A(2)

K

Description

High performance diode suited for high frequency DC to DC converters. Packaged in PowerFLAT™ 5x6, this device is intended for use in low voltage high frequency inverters.

A(2)

A(1)

PowerFLAT 5x6

STTH30R02DJF

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j

V

(typ) 0.8 V

F

(typ) 27 ns

t

rr

A(2)

A(1)

30 A

200 V

175 °C

TM: PowerFLAT is a trademark of STMicroelectronics

March 2012 Doc ID 022761 Rev 1 1/9

This is information on a product in full production.

www.st.com

9

Characteristics STTH30R02DJF

1 Characteristics

Table 2. Absolute ratings (limiting values with anode terminals short-circuited)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

Table 3. Thermal parameter

Repetitive peak reverse voltage 200 V

RRM

Forward rms current 45 A

Average forward current

Surge non repetitive forward current

FSM

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature 175 °C

T

j

Tc = 105 °C δ = 0.5

= 10 ms

t

p

sinusoidal

30 A

300 A

Symbol Parameter Maximum Unit

R

Table 4. Static electrical characteristics (anode terminals short-circuited)

Junction to case 2.0 °C/W

th(j-c)

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

R

(2)

Forward voltage drop

F

T

= 25 °C

j

Tj = 125 °C 10 100

Tj = 25 °C

= 200V

V

R

11.15

IF = 30 A

= 150 °C 0.80 0.95

T

j

10

µA

V

To evaluate the maximum conduction losses use the following equation: P = 0.77 x I

2/9 Doc ID 022761 Rev 1

F(AV)

+ 0.006 I

F2(RMS)

STTH30R02DJF Characteristics

0

(A)

Table 5. Recovery characteristics

Symbol Parameter

Reverse recovery time Tj = 25 °C

t

rr

I

Reverse recovery current

RM

S

Table 6. Turn-on switching characteristics

Reverse recovery

factor

softness factor

Reverse recovery charges 140 nC

Q

rr

Tj = 125 °C

Symbol Parameter

Test conditions

= 1 A

I

F

Vr = 30 V

/dt = 100 A/µs

dI

F

I

= 1 A

F

= 30 V

V

r

/dt = 50 A/µs

dI

F

I

= 30 A,

F

/dt = - 200 A/µs,

dI

F

= 160 V

V

CC

Test conditions

Min. Typ Max. Unit

27 35

ns

38 50

6.0 8.0 A

0.3 -

Min. Typ Max. Unit

t

Forward recovery time

fr

Tj = 25 °C

V

Forward recovery voltage 2.3 3.5 V

FP

IF = 30 A dIF/dt = 200 A/µs V

Figure 1. Average forward power dissipation

versus average forward current

P

(W)

F(AV)

40

35

30

25

20

15

10

5

0

0 5 10 15 20 25 30 35 4

δ

=0.05

δ

=0.1

=0.2

δ

I

(A)

F(AV)

=0.5 =1

δ

=Tp/T

δ

T

tp

= 1.3 V

FR

Figure 2. Forward voltage drop versus

forward current

I

FM

100.0

Tj=150 °C

(Typical values)

10.0

1.0

0.1

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

Tj=150 °C

(Maximum values)

300 ns

Tj=25 °C

VFM(V)

Doc ID 022761 Rev 1 3/9