Turbo 2 ultrafast high voltage rectifier
Features
■ Ultrafast switching
■ Low reverse current
■ Low thermal resistance
■ Reduces switching and conduction losses
Description
The STTH30L06, which is using ST Turbo 2 600 V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode.
STTH30L06
K
A
A
D2PAK
STTH30L06G
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
T
j
(typ) 1.10 V
V
F
t
(max) 65 ns
rr
STTH30L06W
A
K
DO-247
30 A
600 V
175 °C
September 2011 Doc ID 10762 Rev 5 1/8
www.st.com
8
Characteristics STTH30L06
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
T
Table 3. Thermal resistance
Repetitive peak reverse voltage 600 V
RRM
Forward rms voltage 50 A
Average forward current Tc = 125 °C, δ = 0.5 30 A
Surge non repetitive forward current tp = 10 ms sinusoidal 300 A
FSM
Storage temperature range -65 to + 175 °C
stg
T
Maximum operating junction temperature 175 °C
j
Symbol Parameter Value (max) Unit
R
Table 4. Static electrical characteristics
Junction to case 1.1 °C/W
th(j-c)
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
(1)
IR
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2%
p
= 25 °C
j
= 150 °C 80 800
T
j
= V
V
R
RRM
Tj = 25 °C
IF = 30 A
= 150 °C 1.0 1.25
T
j
25
1.55
µA
V
To evaluate the conduction losses use the following equation: P = 0.95 x I
Table 5. Dynamic Characteristics
F(AV)
+ 0.010 I
F2(RMS)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
= 0.5 A, Irr = 0.25 A,
F
Reverse recovery
t
rr
time
Reverse recovery
I
RM
current
Forward recovery
t
fr
time
V
Forward recovery
FP
voltage
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
T
= 25 °C
j
IR =1 A
I
= 1 A, dIF/dt = 50 A/µs,
F
VR =30 V
I
= 30 A, VR = 400 V,
F
/dt = 100 A/µs
dI
F
= 30 A, dIF/dt = 100 A/µs,
I
F
= 1.1 x V
V
FR
= 30 A, dIF/dt = 100 A/µs,
I
F
V
= 1.1 x V
FR
Fmax
Fmax
65 90
11.5 16 A
2.5 V
65
500 ns
2/8 Doc ID 10762 Rev 5
ns
STTH30L06 Characteristics
Figure 1. Conduction losses versus average
forward current
P(W)
50
45
40
35
30
25
20
15
10
5
0
δ = 0.05
0 5 10 15 20 25 30 35 40
δ = 0.2
δ = 0.1
I (A)
F(AV)
δ = 0.5
δ = 1
δ
=tp/T
T
tp
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
Figure 5. Reverse recovery time versus dIF/dt
(typical values)
t (ns)
rr
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
0 50 100 150 200 250 300 350 400 450 500
I =2 x I
F F(AV)
I=I
F F(AV)
dI /dt(A/µs)
F
I =0.5 x I
F F(AV)
V =400V
R
T=125°C
j
Figure 2. Forward voltage drop versus
forward current
I (A)
FM
100
90
80
70
60
50
40
30
20
10
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
T=150°C
j
(typical values)
T=150°C
j
(maximum values)
V (V)
FM
T=25°C
j
(maximum values)
Figure 4. Peak reverse recovery current
versus dI
I (A)
RM
45
V =400V
R
T=125°C
j
40
35
30
25
20
15
10
5
0
0 50 100 150 200 250 300 350 400 450 500
I =0.5 x I
F F(AV)
/dt (typical values)
F
I =2 x I
F F(AV)
I=I
F F(AV)
dI /dt(A/µs)
F
Figure 6. Reverse recovery charges versus
dI
/dt (typical values)
F
Q (nC)
rr
3500
V =400V
R
T=125°C
j
3000
2500
2000
1500
1000
500
0
0 100 200 300 400 500
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
dI /dt(A/µs)
F
Doc ID 10762 Rev 5 3/8