ST STTH3012 User Manual

STTH3012

Ultrafast recovery - 1200 V diode

Main product characteristics

I

F(AV)

V

RRM

T

j

(typ) 1.30 V

V

F

(typ) 57 ns

t

rr

30 A

1200 V

175° C

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

Description

The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.

Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.

KA

A

K

DO-247

STTH3012W

A

K

TO-220AC

STTH3012D

Order codes

Part Number Marking

STTH3012D STTH3012D

STTH3012W STTH3012W

The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.

March 2006 Rev 1 1/9

www.st.com

9

Characteristics STTH3012

1 Characteristics

Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

Table 2. Thermal parameters

Repetitive peak reverse voltage 1200 V

RMS forward current 50 A

Average forward current, δ = 0.5 Tc = 105° C 30 A

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 300 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 210 A

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature 175 °C

T

j

Symbol Parameter Value Unit

R

th(j-c)

Table 3. Static electrical characteristics

Junction to case 0.95 °C/W

Symbol Parameter Test conditions Min. Typ Max. Unit

T

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 15 150

T

j

= V

V

R

RRM

Tj = 25° C

Tj = 125° C 1.25 1.9

= 150° C 1.20 1.8

T

j

T

= 25° C

j

Tj = 125° C 1.35 2.05

= 150° C 1.30 1.95

T

j

= 25 A

I

F

= 30 A

I

F

20

2.1

2.25

µA

V

To evaluate the conduction losses use the following equation:
P = 1.60 x I

2/9

F(AV)

+ 0.012 I

F2(RMS)

STTH3012 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

t

Forward recovery time

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

80

δ = 0.5

δ

I (A)

F(AV)

δ = 0.2

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35

δ = 0.05

δ = 0.1

Test conditions

I

= 1 A, dIF/dt = -50 A/µs,

F

VR = 30 V, Tj = 25° C

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 30 A, dIF/dt = -200 A/µs,

I

F

VR = 600 V, Tj = 125° C

I

= 30 A, dIF/dt = -200 A/µs,

F

VR = 600 V, Tj = 125° C

= 30 A dIF/dt = 100 A/µs

I

F

= 1.5 x V

V

FR

= 30 A, dIF/dt = 100 A/µs,

I

F

= 25° C

T

j

, Tj = 25° C

Fmax

Figure 2. Forward voltage drop versus

I (A)

120

110

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

=tp/T

δ = 1

T

tp

forward current

FM

T=150°C

j

(maximum values)

T=150°C

j

(typical values)

Min. Typ Max. Unit

115

ns

57 80

25 35 A

1.5

550 ns

6V

T= 25°C

j

(maximum values)

V (V)

FM

3/9