ST STTH3012 User Manual
STTH3012
Ultrafast recovery - 1200 V diode
Main product characteristics
I
F(AV)
V
RRM
T
j
(typ) 1.30 V
V
F
(typ) 57 ns
t
rr
30 A
1200 V
175° C
Features and benefits
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
KA
A
K
DO-247
STTH3012W
A
K
TO-220AC
STTH3012D
Order codes
Part Number Marking
STTH3012D STTH3012D
STTH3012W STTH3012W
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
March 2006 Rev 1 1/9
www.st.com
9
Characteristics STTH3012
1 Characteristics
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FRM
I
FSM
T
Table 2. Thermal parameters
Repetitive peak reverse voltage 1200 V
RMS forward current 50 A
Average forward current, δ = 0.5 Tc = 105° C 30 A
Repetitive peak forward current tp = 5 µs, F = 5 kHz square 300 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 210 A
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature 175 °C
T
j
Symbol Parameter Value Unit
R
th(j-c)
Table 3. Static electrical characteristics
Junction to case 0.95 °C/W
Symbol Parameter Test conditions Min. Typ Max. Unit
T
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25° C
j
= 125° C 15 150
T
j
= V
V
R
RRM
Tj = 25° C
Tj = 125° C 1.25 1.9
= 150° C 1.20 1.8
T
j
T
= 25° C
j
Tj = 125° C 1.35 2.05
= 150° C 1.30 1.95
T
j
= 25 A
I
F
= 30 A
I
F
20
2.1
2.25
µA
V
To evaluate the conduction losses use the following equation:
P = 1.60 x I
2/9
F(AV)
+ 0.012 I
F2(RMS)
STTH3012 Characteristics
Table 4. Dynamic characteristics
Symbol Parameter
t
Reverse recovery time
rr
I
Reverse recovery current
RM
S Softness factor
t
Forward recovery time
fr
V
Forward recovery voltage
FP
Figure 1. Conduction losses versus
average current
P(W)
80
δ = 0.5
δ
I (A)
F(AV)
δ = 0.2
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35
δ = 0.05
δ = 0.1
Test conditions
I
= 1 A, dIF/dt = -50 A/µs,
F
VR = 30 V, Tj = 25° C
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25° C
V
R
= 30 A, dIF/dt = -200 A/µs,
I
F
VR = 600 V, Tj = 125° C
I
= 30 A, dIF/dt = -200 A/µs,
F
VR = 600 V, Tj = 125° C
= 30 A dIF/dt = 100 A/µs
I
F
= 1.5 x V
V
FR
= 30 A, dIF/dt = 100 A/µs,
I
F
= 25° C
T
j
, Tj = 25° C
Fmax
Figure 2. Forward voltage drop versus
I (A)
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
=tp/T
δ = 1
T
tp
forward current
FM
T=150°C
j
(maximum values)
T=150°C
j
(typical values)
Min. Typ Max. Unit
115
ns
57 80
25 35 A
1.5
550 ns
6V
T= 25°C
j
(maximum values)
V (V)
FM
3/9
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