ST STTH3010-Y User Manual

STTH3010-Y

Automotive ultrafast recovery - high voltage diode

Features

■AEC-Q101 qualified

■Ultrafast soft recovery

■Very low conduction and switching losses

■High frequency and/or high pulsed current operation

■High reverse voltage capability

■High junction temperature

■ECOPACK®2 compliant component (STTH3010WY)

Description

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.

Datasheet − production data

	A	K
		K
		A
		NC
		D2PAK
	STTH3010GY
		A
		K
		DO-247
	STTH3010WY
Table 1.	Device summary
	IF(AV)	30 A
	VRRM	1000 V
	Tj	175 °C
	VF (typ)	1.30 V
	trr (typ)	42 ns

June 2012

Doc ID 018923 Rev 1

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This is information on a product in full production.

www.st.com

Characteristics

STTH3010-Y

1

Characteristics

Table 2.

Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

1000

V

IF(RMS)

Forward rms current

50

A

IF(AV)

Average forward current, δ = 0.5

DO-247

Tc = 105 °C

30

A

D2PAK

Tc = 105 °C

IFRM

Repetitive peak forward current

tp = 5 µs, F = 5 kHz square

300

A

IFSM

Surge non repetitive forward current

tp = 10 ms Sinusoidal

180

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature range

-40 to +175

°C

Table 3.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

DO-247

1.1

°C/W

D2PAK

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR(1)

Reverse leakage current

Tj

= 25 °C

VR = VRRM

15

µA

Tj = 125 °C

10

100

Tj = 25 °C

2

V (2)

Forward voltage drop

T

= 100 °C

I = 30 A

1.4

1.8

V

F

j

F

Tj = 150 °C

1.3

1.7

1.Pulse test: tp = 5 ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 1.3 x IF(AV) + 0.013 IF2(RMS)

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STTH3010-Y				Characteristics
Table 5.	Dynamic characteristics
Symbol	Parameter	Test conditions	Min.	Typ	Max.	Unit
		IF = 1 A, dIF/dt = -50 A/µs,			100
		VR = 30 V, Tj = 25 °C
trr	Reverse recovery time	IF = 1 A, dIF/dt = -100 A/µs,		53	70	ns
		VR = 30 V, Tj = 25 °C
		IF = 1 A, dIF/dt = -200 A/µs,		42	55
		VR = 30 V, Tj = 25 °C
IRM	Reverse recovery current	IF = 30 A, dIF/dt = -200 A/µs,		24	32	A
		VR = 600 V, Tj = 125 °C
S	Softness factor	IF = 30 A, dIF/dt = -200 A/µs,		1
		VR = 600 V, Tj = 125 °C
tfr	Forward recovery time	IF = 30 A dIF/dt = 100 A/µs			450	ns
		VFR = 1.5 x VFmax, Tj = 25 °C
VFP	Forward recovery voltage	IF = 30 A, dIF/dt = 100 A/µs,		5		V
		Tj = 25 °C
Figure 1. Conduction losses versus		Figure 2. Forward voltage drop versus
	average current	forward current

P(W)									IFM(A)
70						=0.5			200
65				=0.2				=1	180
60
			=0.1						160
55
												Tj=150°C
50
		=0.05							140			(Maximum values)
45									120
40
35									100			Tj=150°C
30												(Typical values)
									80
25
									60						Tj=25°C
20
							T								(Maximum values)
15									40
10
									20
5				IF(AV)(A)										VFM(V)
0									0
0	5	10	15	20	25	30	35	40	0.0	0.5	1.0	1.5	2.0	2.5	3.0	3.5

Figure 3. Relative variation of thermal	Figure 4. Peak reverse recovery current
impedance junction to case	versus dIF/dt (typical values)
versus pulse duration

1.0	Zth(j-c)/Rth(j-c)			60	IRM(A)
0.9	Single pulse					VR=600V
				50		Tj=125°C							IF= 2 x IF(AV)
0.8
0.7				40						IF= IF(AV)
0.6
0.5				30		IF=0.5 x IF(AV)
0.4
0.3				20
0.2				10
0.1			tp(s)								dIF/dt(A/µs)
0.0				0
1.E-03		1.E-02	1.E-01	1.E+00	0	50	100	150	200	250	300	350	400	450	500

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