ST STTH3006DPI User Manual

ST STTH3006DPI User Manual

®

STTH3006DPI

 

 

 

Tandem 600V HYPERFAST BOOST DIODE

MAJOR PRODUCTS CHARACTERISTICS

IF(AV)

30 A

 

 

VRRM

600 V

 

 

Tj (max)

150 °C

 

 

VF (max)

2.4 V

IRM (typ.)

6.7 A

trr (typ.)

25 ns

FEATURES AND BENEFITS

ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS

DESIGNED FOR HIGH dIF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS

INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES

INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK.

STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN

PACKAGE CAPACITANCE: C=16pF

ABSOLUTE RATINGS (limiting values)

1 2

2

1

DOP3I

(insulated)

DESCRIPTION

The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt.

Symbol

Parameter

 

Value

Unit

 

 

 

 

 

VRRM

Repetitive peak reverse voltage

 

600

V

 

 

 

 

 

IF(RMS)

RMS forward current

 

32

A

 

 

 

 

 

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

180

A

 

 

 

 

 

Ipeak

Peak current waveform

δ = 0.15 Tc = 120°C

50

A

 

 

 

 

 

Tstg

Storage temperature range

 

-65 +150

°C

 

 

 

 

 

Tj

Maximum operating junction temperature

+ 150

°C

 

 

 

 

 

October 2003 - Ed: 2A

1/5

 

STTH3006DPI

THERMAL AND POWER DATA

Symbol

 

Parameter

 

 

Test conditions

 

 

Value

 

Unit

 

 

 

 

 

 

 

 

 

 

 

Rth (j-c)

 

Junction to case thermal resistance

 

 

 

 

1.3

 

 

°C/W

 

 

 

 

 

 

 

 

 

 

 

STATIC ELECTRICAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

 

Parameter

Tests Conditions

Min.

Typ.

 

Max.

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

IR *

 

Reverse leakage current

VR = VRRM

 

Tj = 25°C

 

 

 

 

40

µA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tj = 125°C

 

 

60

 

400

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VF **

 

Forward voltage drop

IF = 30 A

 

Tj = 25°C

 

 

 

 

3.6

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tj = 150°C

 

 

1.95

 

2.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pulse test :

* tp = 100 ms, δ < 2 %

 

 

 

 

 

 

 

 

 

 

** tp = 380 µs, δ < 2%

 

 

 

 

 

 

 

 

 

 

To evaluate the maximum conduction losses use the following equation :

P = 1.7 x IF(AV) + 0.023 IF2(RMS)

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Tests Conditions

 

Min.

Typ.

Max.

Unit

 

 

 

 

 

 

 

 

 

 

trr

Reverse recovery

IF = 0.5 A

Irr = 0.25 A

 

Tj = 25°C

 

25

 

ns

 

time

IR = 1 A

 

 

 

 

 

 

 

 

 

IF = 1 A dIF/dt = - 50 A/µs

 

 

 

 

45

 

 

 

VR = 30 V

 

 

 

 

 

 

 

IRM

Reverse recovery

VR = 400 V

IF = 30 A

 

Tj = 125°C

 

6.7

8.5

A

 

current

dIF/dt = -200 A/µs

 

 

 

 

 

 

S

Reverse recovery

 

 

 

 

 

0.3

 

-

 

softness factor

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Qrr

Reverse recovery

 

 

 

 

 

145

 

nC

 

charges

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TURN-ON SWITCHING CHARACTERISTICS

 

 

 

 

 

Symbol

Parameter

Tests Conditions

 

Min.

Typ.

Max.

Unit

 

 

 

 

 

 

 

 

 

tfr

Forward recovery

IF = 30 A dIF/dt = 100 A/µs

 

Tj = 25°C

 

 

400

ns

 

time

VFR = 1.1 x VF max

 

 

 

 

 

 

VFP

Transient peak

IF = 30 A dIF/dt = 100 A/µs

 

Tj = 25°C

 

 

6

V

 

forward recovery

 

 

 

 

 

 

 

 

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2/5

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