ST STTH3006DPI User Manual
®
Tandem 600V HYPERFAST BOOST DIODE
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 150 °C
(max) 2.4 V
V
F
(typ.) 6.7 A
I
RM
(typ.) 25 ns
t
rr
FEATURES AND BENEFITS
ESPECIALLY SUITED AS BOOST DIODE IN
■
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS
■ DESIGNED FOR HIGH dI
HYPERFAST RECOVERY CURRENT TO
COMPETE WITH SiC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
■
INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
■
INSULATION (2500V
PLACEMENT ON SAME HEATSINK AS
MOSFET FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK.
■
STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN
■
PACKAGE CAPACITANCE: C=16pF
30 A
600 V
/dt OPERATION.
F
) ALLOWS
RMS
STTH3006DPI
12
2
1
DOP3I
(insulated)
DESCRIPTION
The TURBOSWITCH “H” is an ultra high
performance diode composedof two300V dice in
series. TURBOSWITCH “H”family drastically cuts
losses in the associated MOSFET when run at
F
/dt.
high dI
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
FSM
Ipeak
T
stg
Tj
October 2003 - Ed: 2A
Repetitive peak reverse voltage
RMS forward current
Surge non repetitive forward current tp = 10 ms sinusoidal
Peak current waveform δ = 0.15 Tc = 120°C
Storage temperature range
Maximum operating junction temperature
600 V
32 A
180 A
50 A
-65 +150 °C
+ 150 °C
1/5
STTH3006DPI
THERMAL AND POWER DATA
Symbol Parameter Test conditions Value Unit
R
th (j-c)
Junction to case thermal resistance
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
1.3 °C/W
*
I
R
V
F
Pulse test: * tp =100ms, δ <2%
Reverse leakage current V
**
Forward voltage drop I
** tp = 380 µs, δ <2%
R=VRRM
Tj = 25°C
Tj = 125°C
= 30A Tj=25°C
F
Tj = 150°C
60 400
1.95 2.4
40 µA
3.6 V
To evaluate the maximum conduction losses use the following equation :
P=1.7xI
F(AV)
+ 0.023 I
F2(RMS)
DYNAMIC CHARACTERISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
t
rr
Reverse recovery
time
IF= 0.5 A Irr = 0.25 A
IR=1A
I
=1A dIF/dt=-50A/µs
F
Tj = 25°C
25 ns
45
VR=30V
I
RM
S
Reverse recovery
current
Reverse recovery
VR= 400 V IF=30A
dIF/dt = -200 A/µs
Tj = 125°C
6.7 8.5 A
0.3 -
softness factor
Q
rr
Reverse recovery
145 nC
charges
TURN-ON SWITCHING CHARACTERISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
t
fr
Forward recovery
time
V
FP
Transient peak
IF=30A dIF/dt = 100 A/µs
Tj = 25°C
VFR=1.1xVFmax
IF=30A dIF/dt = 100 A/µs Tj= 25°C
400 ns
6V
forward recovery
voltage
2/5
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