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Main product characteristics
STTH3002
Ultrafast recovery diode
I
F(AV)
V
RRM
T
(max) 175° C
j
V
(typ) 0.77 V
F
(typ) 22 ns
t
rr
30 A
200 V
Features and benefits
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery time
■ High junction temperature
Description
The STTH3002 uses ST's new 200 V planar Pt
doping technology, and is specially suited for
switching mode base drive and transistor circuits.
Packaged in DO-247, DOP3I, and D²PAK, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
A
A
K
DO-247
STTH3002W
K
NC
2
DPAK
STTH3002G
K
A
K
DOP3I
STTH3002PI
A
Order codes
Part Number Marking
STTH3002W STTH3002
STTH3002PI STTH3002
STTH3002G STTH3002
STTH3002G-TR STTH3002
May 2006 Rev 1 1/10
www.st.com
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Characteristics STTH3002
1 Characteristics
Table 1. Absolute ratings (limiting values at T
= 25° C, unless otherwise specified)
j
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
Table 2. Thermal parameters
Repetitive peak reverse voltage 200 V
RMS forward current 50 A
= 135° C
c
= 115° C
c
Average forward current, δ = 0.5
DO-247 T
2
D
PAK Tc = 135° C
Surge non repetitive forward current tp = 10 ms Sinusoidal 300 A
Storage temperature range -65 to + 175 ° C
stg
T
Maximum operating junction temperature 175 ° C
j
30 ADOP3I T
Symbol Parameter Value Unit
DO-247 1.2
R
th(j-c)
Junction to case
D2PA K 1 .2
Table 3. Static electrical characteristics
° C/WDOP3I 1.8
Symbol Parameter Test conditions Min. Typ Max. Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25° C
j
Tj = 150° C 20 200
= 125° C IF = 25 A 0.77 0.85
T
j
= 25° C
j
T
= 150° C 0.8 0.88
j
= V
V
R
= 30 A
I
F
RRM
20
1.05
T
To evaluate the conduction losses use the following equation:
P = 0.67 x I
F(AV)
+ 0.007 I
F2(RMS)
µA
VT
2/10
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STTH3002 Characteristics
Table 4. Dynamic characteristics
Symbol Parameter
t
rr
I
RM
t
fr
V
FP
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
Test conditions
IF = 1 A, dIF/dt = -200 A/µs,
V
= 30 V, Tj = 25 °C
R
= 1 A, dIF/dt = -50 A/µs,
I
F
= 30 V, Tj = 25 °C
V
R
= 30 A, dIF/dt = 200 A/µs,
I
F
= 160 V, Tj = 125 °C
V
R
IF = 30 A, dIF/dt = 200 A/µs
V
= 1.1 x V
FR
, Tj = 25 °C
Fmax
IF = 30 A, dIF/dt = 200 A/µs,
VFR = 1.1 x V
, Tj = 25 °C
Fmax
Min. Typ Max. Unit
22 27
40 50
7.6 9.5 A
140 ns
2.5 V
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values)
IM(A)
200
180
160
140
120
100
80
60
40
20
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
P = 20 WP = 20 W
P = 10 WP = 10 W
P = 5 WP = 5 W
δ
T
T
I
I
M
M
=tp/T
=tp/T
d
δ
tp
tp
IFM(A)
200
180
160
140
120
100
80
60
40
20
0
0.0 0.4 0.8 1.2 1.6 2.0
Tj=150 °C
Tj=25 °C
VFM(V)
ns
Figure 3. Forward voltage drop versus
forward current (maximum values)
IFM(A)
200
180
160
140
120
100
80
60
40
20
0
0.0 0.4 0.8 1.2 1.6 2.0
Tj=150 °C
Tj=25 °C
VFM(V)
Figure 4. Relative variation of thermal
impedance, junction to case,
versus pulse duration
Z
th(j-c)/Rth(j-c)
1.0
Single pulse
D²PAK
0.1
1.E-03 1.E-02 1.E-01 1.E+00
3/10
tp(s)