ST STTH3002 User Manual

Main product characteristics

STTH3002

Ultrafast recovery diode

I

F(AV)

V

RRM

T

(max) 175° C

j

V

(typ) 0.77 V

F

(typ) 22 ns

t

rr

30 A

200 V

Features and benefits

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery time

■ High junction temperature

Description

The STTH3002 uses ST's new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits.

Packaged in DO-247, DOP3I, and D²PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.

A

K

DO-247

STTH3002W

K

NC

2

DPAK

STTH3002G

K

A

K

DOP3I

STTH3002PI

A

Order codes

Part Number Marking

STTH3002W STTH3002

STTH3002PI STTH3002

STTH3002G STTH3002

STTH3002G-TR STTH3002

May 2006 Rev 1 1/10

www.st.com

Characteristics STTH3002

1 Characteristics

Table 1. Absolute ratings (limiting values at T

= 25° C, unless otherwise specified)

j

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

T

Table 2. Thermal parameters

Repetitive peak reverse voltage 200 V

RMS forward current 50 A

= 135° C

c

= 115° C

c

Average forward current, δ = 0.5

DO-247 T

2

D

PAK Tc = 135° C

Surge non repetitive forward current tp = 10 ms Sinusoidal 300 A

Storage temperature range -65 to + 175 ° C

stg

T

Maximum operating junction temperature 175 ° C

j

30 ADOP3I T

Symbol Parameter Value Unit

DO-247 1.2

R

th(j-c)

Junction to case

D2PA K 1 .2

Table 3. Static electrical characteristics

° C/WDOP3I 1.8

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

Tj = 150° C 20 200

= 125° C IF = 25 A 0.77 0.85

T

j

= 25° C

j

T

= 150° C 0.8 0.88

j

= V

V

R

= 30 A

I

F

RRM

20

1.05

T

To evaluate the conduction losses use the following equation: P = 0.67 x I

F(AV)

+ 0.007 I

F2(RMS)

µA

VT

2/10

STTH3002 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

Test conditions

IF = 1 A, dIF/dt = -200 A/µs, V

= 30 V, Tj = 25 °C

R

= 1 A, dIF/dt = -50 A/µs,

I

F

= 30 V, Tj = 25 °C

V

R

= 30 A, dIF/dt = 200 A/µs,

I

F

= 160 V, Tj = 125 °C

V

R

IF = 30 A, dIF/dt = 200 A/µs V

= 1.1 x V

FR

, Tj = 25 °C

Fmax

IF = 30 A, dIF/dt = 200 A/µs, VFR = 1.1 x V

, Tj = 25 °C

Fmax

Min. Typ Max. Unit

22 27

40 50

7.6 9.5 A

140 ns

2.5 V

Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus

forward current (typical values)

IM(A)

200

180

160

140

120

100

80

60

40

20

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P = 20 WP = 20 W

P = 10 WP = 10 W

P = 5 WP = 5 W

δ

T

I

M

=tp/T

d

δ

tp

IFM(A)

200

180

160

140

120

100

80

60

40

20

0

0.0 0.4 0.8 1.2 1.6 2.0

Tj=150 °C

Tj=25 °C

VFM(V)

ns

Figure 3. Forward voltage drop versus

forward current (maximum values)

IFM(A)

200

180

160

140

120

100

80

60

40

20

0

0.0 0.4 0.8 1.2 1.6 2.0

Tj=150 °C

Tj=25 °C

VFM(V)

Figure 4. Relative variation of thermal

impedance, junction to case, versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

Single pulse

D²PAK

0.1

1.E-03 1.E-02 1.E-01 1.E+00

3/10

tp(s)