ST STTH2R06 User Manual
STTH2R06
High efficiency ultrafast diode
Features
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ High junction temperature
Description
The STTH2R06 uses ST Turbo 2 600 V planar Pt
doping technology. It is specially suited for
switching mode base drive and transistor circuits.
Packaged in axial, SMA, SMB and SMC, this
device is intended for use in high frequency
inverters, free wheeling and polarity protection.
DO-41
STTH2R06
SMB
STTH2R06U
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
T
j
(typ) 1.0 V
V
F
t
(typ) 35 ns
rr
KA
SMA
STTH2R06A
SMC
STTH2R06S
2 A
600 V
175 °C
December 2009 Doc ID 10757 Rev 4 1/10
www.st.com
10
Characteristics STTH2R06
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
T
Table 3. Thermal resistance
Repetitive peak reverse voltage 600 V
RRM
Forward rms current 7 A
DO-41 T
SMA T
Average forward current δ = 0.5
SMB T
SMC T
= 70 °C
L
= 85 °C
L
= 100 °C
L
= 115 °C
L
DO-41
= 10ms
t
Surge non repetitive forward current
FSM
SMA / SMB /
p
sinusoidal
SMC
Storage temperature range -65 to + 175 °C
stg
Operating junction temperature range -40 to + 175 °C
T
j
2A
40
30
Symbol Parameter Maximum Unit
DO-41 L = 5 mm 35
SMA 30
R
th(j-l)
Junction to lead
SMB 25
°C/W
SMC 20
Table 4. Static electrical characteristics
A
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 25 °C
T
Reverse leakage
(1)
I
R
current
(2)
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
Forward voltage drop
F
j
= 150 °C - 12 85
T
j
T
= 25 °C
j
= 150 °C - 1.0 1.25
T
j
VR = V
= 2 A
I
F
To evaluate the maximum conduction losses use the following equation:
P = 1 x I
2/10 Doc ID 10757 Rev 4
F(AV)
+ 0.125 I
F2(RMS)
RRM
--2
µA
--1.7
V
STTH2R06 Characteristics
Table 5. Dynamic electrical characteristics
Symbol Parameter
Reverse recovery time Tj = 25 °C
t
rr
Test conditions
= 0.5 A, Irr = 0.25 A,
I
F
IR = 1 A
= 1 A,
I
F
/dt = -50 A/µs
dI
F
Min. Typ. Max. Unit
--30
ns
-3550
VR = 30 V
Forward recovery time
t
fr
V
Forward recovery voltage - - 10 V
FP
= 25 °C
T
j
Figure 1. Conduction losses versus average
forward current
P(W)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ = 1
=tp/T
δ
Figure 3. Relative variation of thermal
impedance junction to case versus
I
F
dI
VFR = 1.1 x V
T
tp
= 2 A,
/dt = 100 A/µs
F
--100ns
Fmax
Figure 2. Forward voltage drop versus
forward current
I (A)
FM
10
9
8
7
6
5
4
3
2
1
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
(maximum values)
T =150°C
j
(typical values)
T =150°C
j
V (V)
FM
T =25°C
j
(maximum values)
Figure 4. Peak reverse recovery current
versus dI
/dt (typical values)
F
pulse duration
Z/R
th(j-a) th(j-a)
1.0
SMA/SMB/SMC: S = 1cm
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
2
CU
SMA
SMC
t (s)
p
DO-41
SMB
I (A)
RM
9
V =400V
R
T =125°C
j
8
7
6
5
4
3
2
1
0
0 50 100 150 200 250 300 350 400 450 500
I =0.5 x I
F F(AV)
I=I
F F(AV)
dI /dt(A/µs)
I =2 x I
F F(AV)
F
Doc ID 10757 Rev 4 3/10
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