ST STTH2R02-Y User Manual

Features

■ very low conduction losses

■ negligible switching losses

■ low forward and reverse recovery times

■ high junction temperature

■ AEC-Q101 qualified

STTH2R02-Y

Automotive ultrafast recovery diode

KA

A

Description

The STTH2R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.

Packaged in SMB, this device is intended for use
in low voltage, high frequency inverters, free
wheeling and polarity protection for automotive
applications.

K

SMB

STTH2R02UY

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

(max) 175 °C

j

(typ) 0.7 V

V

F

(typ) 15 ns

t

rr

2 A

200 V

October 2010 Doc ID 17934 Rev 1 1/8

www.st.com

8

Characteristics STTH2R02-Y

1 Characteristics

Table 2. Absolute ratings (limiting values at T

Symbol Parameter Value Unit

= 25 °C, unless otherwise specified)

j

V

RRM

I

FRM

I

F(RMS)

I

F(AV)

I

FSM

T

T

Table 3. Thermal parameters

Repetitive peak reverse voltage 200 V

= 5 µs, F = 5 kHz

Repetitive peak forward current

t

p

Forward rms current 60 A

Average forward current, δ = 0.5 Tc = 90 °C 2 A

= 10 ms Sinusoidal

Surge non repetitive forward current

Storage temperature range -65 to +175 °C

stg

Operating junction temperature range -40 to +175 °C

j

t

p

60 A

75 A

Symbol Parameter Value Unit

R

th(j-c)

Table 4. Static electrical characteristics

Junction to case 30 °C/W

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Reverse leakage current

(2)

Forward voltage drop

F

= 25 °C

j

= 125 °C - 2 20

T

j

= 25 °C IF = 6 A - - 1.20

T

j

T

= 25 °C

j

Tj = 100 °C - 0.76 0.85

= 150 °C - 0.70 0.80

T

j

V

R

I

= 2 A

F

= V

RRM

--3

- 0.89 1.0

µA

V

To evaluate the conduction losses use the following equation:
P = 0.68 x I

2/8 Doc ID 17934 Rev 1

F(AV)

+ 0.06 I

F2(RMS)

STTH2R02-Y Characteristics

Table 5. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

Test conditions

I

= 1 A, dIF/dt = -50 A/µs,

F

VR = 30 V, Tj = 25 °C

= 1 A, dIF/dt = -100 A/µs,

I

F

VR = 30 V, Tj = 25 °C

IF = 2 A, dIF/dt = -200 A/µs,
VR = 160 V, Tj = 125 °C

IF = 2 A, dIF/dt = 100 A/µs
VFR = 1.1 x V

= 2 A, dIF/dt = 100 A/µs,

I

F

= 25 °C

T

j

, Tj = 25 °C

Fmax

Min. Typ Max. Unit

-2330

-1520

-34A

-40- ns

-2.0- V

Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus

forward current (typical values)

100

IM(A)

T

T

I

I

M

M

80

60

d

δ

=tp/T

=tp/T

tp

tp

IFM(A)

50

40

30

ns

40

20

P = 5 WP = 5 W

P = 2 WP = 2 W

P = 1 WP = 1 W

δ

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Figure 3. Forward voltage drop versus

forward current (maximum values)

IFM(A)

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5

Tj=150°C

Tj=25°C

VFM(V)

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5

Tj=150°C

Tj=25°C

VFM(V)

Figure 4. Relative variation of thermal

impedance junction to case versus
pulse duration

Z

th(j-a)/Rth(j-a)

1.0

SMA

S

=1cm²

0.9

cu

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(ms)

Doc ID 17934 Rev 1 3/8