ST STTH20LCD06C User Manual

STTH20LCD06C
Turbo2 ultrafast - high voltage rectifier for SMPS
Features
ultrafast switching
low reverse current
low thermal resistance
Description
The STTH20LCD06C uses ST Turbo2 technology. This device is specially suited for switching power supplies working with interleaved PFCs.
A1
A2
A2
K
A1
TO-220AB
STTH20LCD06CT
STTH20LCD06CFP
K
A1
D2PAK
STTH20LCD06CG-TR

Table 1. Device summary

I
F(AV)
V
RRM
T
j
(typ) 1.25 V
V
F
t
(max) 50 ns
rr
K
TO-220FPAB
A2
2 x 10 A
600 V
175 °C
A1
A2
K
January 2011 Doc ID 15898 Rev 2 1/10
www.st.com
10
Characteristics STTH20LCD06C

1 Characteristics

Table 2. Absolute ratings

(1)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
T
1. Limiting values per diode at 25 °C, unless otherwise specified
2. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Repetitive peak reverse voltage 600 V
RRM
Forward current rms 30 A
TO-220AB,
2
PA K
D
Average forward
= 105 °C
T
c
current, δ = 0.5
= 60 °C TO-220FPAB
T
c
Surge non repetitive forward current tp = 10 ms sinusoidal 80 A
FSM
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature
T
j
<
Rth(j-a)
1
dPtot
dTj
(2)
Per diode 10 A
Per device 20 A
Per diode 10 A
Per device 20 A
175 °C
Symbol Parameter Value Unit
2
PA K 3 .5
°C/W
R

Table 4. Static electrical characteristics

th(j-c)
Junction to case
TO-220AB, D
TO-220FPAB 5.8
Symbol Parameter Test conditions Min. Typ. Max. Unit
Reverse leakage
(1)
I
R
current
(2)
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
Forward voltage drop
F
= 25 °C
T
j
= 150 °C - 10 100
T
j
= 25 °C
T
j
T
= 150 °C - 1.25 1.6
j
= 25 °C
T
j
T
= 150 °C - 1.55 2
j
= V
V
R
I
= 10 A
F
= 20 A
I
F
RRM
--1
--2
- - 2.35
To evaluate the conduction losses use the following equation: P = 1.2 x I
F(AV)
+ 0.04 x I
F2(RMS)
µA
V
2/10 Doc ID 15898 Rev 2
STTH20LCD06C Characteristics

Table 5. Dynamic electrical characteristics

Symbol Parameter
Test conditions
I
= 0.5 A, Irr = 0.25 A,
F
IR = 1 A, Tj = 25 °C
t
Reverse recovery time
rr
I
V
Reverse recovery current
RM
t
Forward recovery time
fr
Forward recovery voltage
FP
= 1 A, dIF/dt = -50 A/µs,
I
F
= 30 V, Tj = 25 °C
V
R
= 10 A, dIF/dt = -50 A/µs,
I
F
VR = 400 V, Tj = 125 °C
I
= 10 A, dIF/dt = 100 A/µs
F
VFR = 1.1 x V
= 10 A, dIF/dt = 100 A/µs
I
F
= 1.1 x V
V
FR
Figure 1. Average forward power dissipation
versus average forward current (per diode)
P
(W)
F(AV)
24
δ = 0.2
20
16
12
8
4
0
02468101214
δ = 0.05
δ = 0.1
δ = 0.5
δ = tp/T
δ = 1
T
t
p
Min. Typ. Max. Unit
25
35 50
22.8A
, Tj = 25 °C
Fmax
, Tj = 25 °C
Fmax
4V
230 ns
Figure 2. Forward voltage drop versus
forward current (per diode)
IFM(A)
100
80
60
(Typical values)
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
(Maximum values)
Tj= 150 °C
Tj= 150 °C
Tj= 25 °C
(Maximum values)
ns
VFM(V)
Figure 3. Relative variation of thermal
impedance junction to case versus pulse duration (TO-220AB, D
Z
th(j-c)/Rth(j-c)
1.0 TO-220AB
0.9
D2PAK
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Figure 4. Relative variation of thermal
impedance junction to case versus
2
PAK)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
tp(s)
Doc ID 15898 Rev 2 3/10
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
pulse duration (TO-220FPAB)
Z
th(j-c)/Rth(j-c)
TO-220FPAB
Single pulse
tp(s)
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