ST STTH20L03C User Manual

Features

STTH20L03C

High frequency secondary rectifier

Datasheet − production data

■ Ultrafast, soft and noise-free recovery

■ Low forward voltage drop

Description

Dual center tap fast recovery epitaxial diodes suited for switch mode power supply and high frequency DC/DC converters.

Packaged in TO-220AB or D especially intended for secondary rectification inside SMPS with high space and power-density.

2

PAK, this device is

A1

A2

K

A1

TO-220AB

STTH20L03CT

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j

V

(max) 0.95 V

F

(typ) 26 ns

t

rr

K

A2

A1

D2PAK

STTH20L03CG

2 x 10 A

300 V

-40 to +175 °C

June 2012 Doc ID 023115 Rev 1 1/9

This is information on a product in full production.

www.st.com

9

Characteristics STTH20L03C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

Table 3. Thermal resistance

Repetitive peak reverse voltage 300 V

RRM

Forward rms current 30 A

T

= 155 °C

Average forward current, δ = 0.5

Surge non repetitive forward current tp = 10 ms sinusoidal 150 A

FSM

Storage temperature range -65 to + 175 °C

stg

Operating junction temperature range -40 to +175 °C

T

j

c

= 150 °C

T

c

Per diode Per device

10 20

Symbol Parameter Value (max) Unit

Per diode 1.5

R

Junction to case

th(j-c)

Coupling 0.5

th(c)

°C/WTo ta l 1 .0

When diodes 1 and 2 are used simultaneously: Tj

(diode 1)

Table 4. Static electrical characteristics (per diode)

= P

(diode 1)

x R

(Per diode) + P

th(j-c)

(diode 2)

x Rth(c)

A

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: t

Reverse leakage current

R

(2)

Forward voltage drop

F

= 380 µs, δ < 2%

p

= 25 °C

j

= 125 °C 10 100

T

j

T

= 25 °C

j

Tj = 125 °C 0.8 0.95

= V

V

R

= 10 A

I

F

RRM

0.95 1.2

10

T

To evaluate the conduction losses use the following equation: P = 0.8 x I

+ 0.015 I

F(AV)

F2(RMS))

µA

V

2/9 Doc ID 023115 Rev 1

STTH20L03C Characteristics

Table 5. Dynamic electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

= 25 °C

j

t

Reverse recovery time

rr

= 125 °C

T

j

I

Reverse recovery current

S

Q

RM

factor

RR

t

fr

V

FP

Softness factor 0.3

Reverse recovery charges

Forward recovery time

Forward recovery voltage 2.5 3.5 V

Tj = 125 °C

T

= 125 °C IF = 10 A, VR = 200 V

j

= 25 °C

T

j

Figure 1. Conduction losses versus average

forward current (per diode)

P

(W)

F(AV)

16

14

12

10

8

6

4

2

0

02468101214

δ = 0.05 δ = 0.1

I

F(AV)

δ = 0.2

(A)

=tp/T

δ

δ = 0.5

T

Figure 3. Relative variation of thermal

impedance junction to case versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

IF = 1 A, VR= 30 V dIF/dt = -100 A/µs

IF = 10 A, VR = 200 V dIF/dt = -200 A/µs

IF = 10 A, VR = 200 V

/dt = -200 A/µs

dI

F

/dt = -200 A/µs

dI

F

IF = 10 A, VFR = 1.05 V dIF/dt = 100 A/µs

Figure 2. Forward voltage drop versus

100.0

δ = 1.0

10.0

1.0

tp

0.1

Figure 4. Peak reverse recovery current

IRM(A)

18

16

14

12

10

8

6

4

tp(s)

2

0

0 50 100 150 200 250 300 350 400 450 500

26 35

55 72

912A

250 375 nC

200 ns

forward current (per diode)

IFM(A)

Tj=125 °C

(Maximum values)

Tj=125 °C

(Typical values)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

versus dI

/dt (typical values, per

F

Tj=25 °C

(Maximum values)

VFM(V)

diode)

IF=I

F(AV)

VR=200 V T

=125 °C

j

dIF/dt(A/µs)

ns

Doc ID 023115 Rev 1 3/9