ST STTH200R04TV User Manual

STTH200R04TV

Ultrafast recovery diode

Main product characteristics

I

F(AV)

V

RRM

V

F (typ)

t

rr (typ)

T

j

2 x 100 A

400 V

150° C

0.87 V

40 ns

Features and benefits

■ Ultrafast

■ Very low switching losses

■ High frequency and high pulsed current

operation

■ Low leakage current

■ Insulated package:

–ISOTOP

Electrical insulation = 2500 V

RMS

Capacitance = 45 pF

Description

The STTH200R04TV series uses ST's new 400 V planar Pt doping technology. The STTH200R04 is specially suited for switching mode base drive and transistor circuits, such as welding equipment.

A1

A2

K1

K2

A1

K1

A2

K2

ISOTOP

STTH200R04TV1

Order codes

Part Number Marking

STTH200R04TV1 STTH200R04TV1

March 2007 Rev 1 1/7

www.st.com

7

Characteristics STTH200R04TV

1 Characteristics

Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

V

RSM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

Table 2. Thermal parameters

Repetitive peak reverse voltage 400 V

Non repetitive peak reverse voltage 400 V

RMS forward current Per diode 150 A

Average forward current, δ = 0.5

Per diode T

Per package T

= 80° C 100 A

c

= 65° C 200 A

c

Repetitive peak forward current tp = 5 µs, F = 1 kHz square 2000 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 1000 A

Storage temperature range -65 to + 150 °C

stg

Maximum operating junction temperature 150 °C

j

Symbol Parameter Value Unit

Per diode 0.50

R

th(j-c)

th(c)

Junction to case

° C/WTo t al 0 . 30

Coupling thermal resistance 0.1

When the diodes are used simultaneously: ΔT

j(diode1)

Table 3. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= P

(diode1)

x R

(per diode) + P

th(j-c)

T

= 25° C

j

= 125° C 80 800

T

j

T

= 25° C

j

= 150° C 0.87 1.1

T

j

(diode2)

= V

V

R

= 100 A

I

F

x R

RRM

th(c)

80

1.35

To evaluate the conduction losses use the following equation: P = 0.8 x I

+ 0.003 x I

F(AV)

F2(RMS)

µA

VTj = 100° C 0.95 1.2

2/7

STTH200R04TV Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

Reverse recovery current

I

RM

Q

Reverse recovery charges

RR

S Softness factor

Forward recovery time

t

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

140

120

100

80

60

40

20

0

0 10 20 30 40 50 60 70 80 90 100 110 120 130

δ=0.05

δ=0.1

δ=0.2

I

(A)

F(AV)

δ=0.5

δ

Test conditions

IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C

= 1 A, dIF/dt = -100 A/µs,

I

F

VR = 30 V, Tj = 25° C

I

= 1 A, dIF/dt = -200 A/µs,

F

= 30 V, Tj = 25° C

V

R

I

= 100 A, dIF/dt = -200 A/µs,

F

VR = 320 V, Tj = 125° C

= 100 A, dIF/dt = -200 A/µs,

I

F

VR = 320 V, Tj = 125° C

= 100 A, dIF/dt = -200 A/µs,

I

F

= 320 V, Tj = 125° C

V

R

I

= 100 A dIF/dt = 100 A/µs

F

VFR = 1.5 x V

= 100 A, dIF/dt = 100 A/µs,

I

F

= 25° C

T

j

Fmax

, Tj = 25° C

Figure 2. Forward voltage drop versus

IFM(A)

200

180

160

140

120

100

80

60

40

20

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

=tp/T

d=1

T

tp

Min. Typ Max. Unit

forward current

TJ=150°C

(Maximum values)

TJ=150°C

(Typical values)

100

50 70

ns

40 55

22 32 A

1500 2900 nC

0.4

1000 ns

3.5 V

TJ=25°C

(Maximum values)

VFM(V)

Figure 3. Relative variation of thermal

impedance junction to case versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

Single pulse

ISOTOP

0.1

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

tp(s)

Figure 4. Peak reverse recovery current

versus dI

IRM(A)

50

IF= 100A

45

=320V

V

R

40

35

30

25

20

15

10

5

0

10 100 1000

3/7

/dt (typical values)

F

Tj=125 °C

Tj=25 °C

dIF/dt(A/µs)