ST STTH200L06TV User Manual

Features

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces switching and conduction losses

STTH200L06TV

Turbo 2 ultrafast high voltage rectifier

A1 K1

A2 K2

K1

Description

The STTH200L06TV, which is using ST Turbo 2 600 V technology, is specially suited for use in switching power supplies, and industrial applications (such as welding), as rectification diode.

K2

A2

ISOTOP

STTH200L06TV1

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j

(typ) 0.95 V

V

F

t

(max) 80 ns

rr

A1

Up to 2 x 120 A

600 V

150 °C

TM: ISOTOP is a trademark of STMicroelectronics

September 2011 Doc ID 10767 Rev 2 1/8

www.st.com

8

Characteristics STTH200L06TV

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

Table 3. Thermal parameter

Repetitive peak reverse voltage 600 V

RRM

Forward rms current 180 A

T

= 65 °C Per diode 100 A

Average forward current, δ = 0.5

Surge non repetitive forward current tp = 10 ms Sinusoidal 800 A

FSM

Storage temperature range -55 to + 150 °C

stg

Maximum operating junction temperature 150 °C

T

j

c

= 35 °C Per diode 120 A

T

c

Symbol Parameter Maximum Unit

Per diode 0.60

R

Junction to case

th(j-c)

Coupling 0.1

th(c)

°C/WTo ta l 0 .3 5

When the diodes 1 and 2 are used simultaneously:

Δ T

j (diode1)

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

= P

(diode1)

x R

th(j-c) (per diode)

+ P

(diode2)

x R

th(c)

T

= 25 °C

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Reverse leakage current

R

(2)

Forward voltage drop Tj = 25 °C IF = 100 A 1.55

F

j

= 125 °C 100 1000

T

j

= 150 °C 0.95 1.20

T

j

To evaluate the maximum conduction losses use the following equation: P = 0.93 x I

2/8 Doc ID 10767 Rev 2

F(AV)

+ 0.0027 I

F2(RMS)

= V

V

R

RRM

µA

V

100

STTH200L06TV Characteristics

Table 5. Dynamic characteristics (per diode)

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

= 25 °C

T

j

= 125 °C

T

j

= 25 °C

T

j

T

= 25 °C

j

Test conditions

I

= 0.5 A, Irr = 0.25 A,

F

= 1 A

I

R

= 1 A, dIF/dt = 50 A/µs,

I

F

= 30 V

V

R

I

= 100 A, dIF/dt = 400 A/µs,

F

dIF/dt = 100 A/µs

= 100 A, dIF/dt = 200 A/µs

I

F

= 1.1 x V

V

FR

= 100 A, dIF/dt = 200 A/µs

I

F

= 1.1 x V

V

FR

Figure 1. Conduction losses versus average

forward current (per diode)

P(W)

200

180

160

140

120

100

δ = 0.05

80

60

40

20

0

0 20 40 60 80 100 120 140 160

δ = 0.2

δ = 0.1

I (A)

F(AV)

δ = 0.5

δ = 1

δ

=tp/T

T

tp

Figure 3. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

p

Min. Typ. Max. Unit

80

85 120

15 20 A

Fmax

3.4 V

700 ns

Figure 2. Forward voltage drop versus

forward current (per diode)

I (A)

FM

200

180

160

140

120

100

80

60

40

20

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

(maximum values)

T =150°C

j

(typical values)

T =150°C

j

V (V)

FM

T =25°C

j

(maximum values)

Figure 4. Peak reverse recovery current

versus dI

F

/dt

(typical values, per diode)

I (A)

RM

60

V =400V

R

T =125°C

j

50

40

30

20

10

0

0 50 100 150 200 250 300 350 400 450 500

I =0.5 x I

F F(AV)

I=I

dI /dt(A/µs)

F

F F(AV)

I =2 x I

F F(AV)

ns

Doc ID 10767 Rev 2 3/8