ST STTH200L04TV1 User Manual

Features

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces switching and conduction losses

■ Package insulation voltage: 2500 V

RMS

STTH200L04TV1

Ultrafast high voltage rectifier

A1 K1

A2 K2

K1

A1

Description

The STTH200L04TV1 uses ST 400 V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode.

K2

A2

ISOTOP

STTH200L04TV1

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(max) 150 °C

T

j

(typ) 0.83 V

V

F

t

(max) 50 ns

rr

up to 2 x 120 A

400 V

September 2011 Doc ID 12827 Rev 2 1/8

www.st.com

8

Characteristics STTH200L04TV1

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

Table 3. Thermal resistance

Repetitive peak reverse voltage 400 V

RRM

Forward rms current 200 A

T

= 90 °C δ = 0.5 Per diode 100

Average forward current

Surge non repetitive forward

FSM

current

Storage temperature range -55 to + 150 °C

stg

Maximum operating junction temperature 150 °C

T

j

c

= 73 °C δ = 0.5 Per diode 120

T

c

= 10 ms sinusoidal 900 A

t

p

Symbol Parameter

R

Junction to case

th(j-c)

Coupling 0.10

th(c)

When diodes 1 and 2 are used simultaneously: Δ Tj(diode 1) = P(diode 1) x R

Table 4. Static electrical characteristics (per diode)

(Per diode) + P(diode 2) x R

th(j-c)

Value

(max).

Per diode 0.50

th(c)

A

Unit

°C/WTo tal 0 .30

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 25 °C

T

Reverse leakage

(1)

I

R

current

(2)

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

F

j

= 125 °C 100 1000

T

j

T

= 25 °C

j

= 150 °C 0.83 1.0

T

j

VR = V

= 100 A

I

F

To evaluate the conduction losses use the following equation: P = 0.8 x I

2/8 Doc ID 12827 Rev 2

+ 0.002 I

F(AV)

F2(RMS)

RRM

100

µA

1.2 V

STTH200L04TV1 Characteristics

Table 5. Dynamic characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

= 1 A dIF/dt = 50 A/µs

Reverse recovery

S

t

rr

I

RM

factor

t

fr

V

FP

time

Reverse recovery current

Softness factor Tj = 125 °C

Forward recovery time

Forward recovery voltage

= 25 °C

T

j

= 125 °C

T

j

T

= 25 °C

j

= 25 °C

T

j

Figure 1. Conduction losses versus

average forward current (per diode)

P(W )

180

160

140

120

100

80

60

40

20

0

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150

δ=0.05

δ=0.1

I

F(AV)

δ=0.2

(A)

δ=0.5

δ

=tp/T

F

= 30 V

V

R

= 1 A dIF/dt = 200 A/µs

I

F

= 30 V

V

R

I

= 100 A VR = 200 V

F

dIF/dt = 100 A/µs

= 100 A VR = 200 V

I

F

/dt = 100 A/µs

dI

F

= 100 A dIF/dt = 200 A/µs

I

F

= 1.1 x V

V

FR

I

= 100 A dIF/dt = 200 A/µs

F

VFR = 1.1 x V

Fmax

Figure 2. Forward voltage drop versus

I

(A)

I

FM

δ=1

T

tp

200

180

160

140

120

100

80

60

40

20

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

forward current (per diode)

Tj=150°C

(Maximum values)

Tj=150°C

(Typical values)

VFM(V)

75 100

45 60

18 A

0.4

800 ns

2.6 V

Tj=25°C

(Maximum values)

ns

Figure 3. Relative variation of thermal

impedance junction to case versus pulse duration

/R

Z

th (j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

th(j-c)

Single pulse

tP(s)

Figure 4. Peak reverse recovery current

versus dI

/dt

F

(typical values, per diode)

I

(A)

RM

50

IF=I

F(AV)

45

VR=200V T

=125°C

j

40

35

30

25

20

15

10

5

0

0 50 100 150 200 250 300 350 400 450 500

Doc ID 12827 Rev 2 3/8

dIF/dt(A/µs)