ST STTH2003CT, STTH2003CG, STTH2003CF, STTH2003CR, STTH2003CFP User Manual
®
STTH2003CT/CG/CF/CR/CFP
HIGH FREQUENCY SECONDARY RECTIFIER
MAJOR PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
2x10A
300 V
Tj (max) 175 °C
(max) 1 V
V
F
trr (max) 35 ns
FEATURES AND BENEFITS
COMBINES HIGHEST RECOVERY AND
■
REVERSE VOLTAGE PERFORMANCE
■ ULTRA-FAST,SOFT AND NOISE-FREE
RECOVERY
INSULATED PACKAGES: ISOWATT220AB,
■
TO-220FPAB
Electric insulation: 2000VDC
Capacitance: 12pF
DESCRIPTION
Dual center tap Fast Recovery Epitaxial Diodes
suited for Switch Mode Power Supply and high
frequency DC/DC converters.
Packaged in TO-220AB, ISOWATT220AB,
TO-220FPAB, I
2
PAK or D2PAK, this device is
especially intended for secondary rectification.
K
A2
A1
D2PAK
STTH2003CG
A1
TO-220AB
STTH2003CT
A1
TO-220FPAB
STTH2003CFP
A1
K
A2
A2
K
A1
I2PAK
A2
K
A2
K
STTH2003CR
K
A1
ISOWATT220AB
STTH2003CF
A2
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward
current δ = 0.5
I
FSM
I
RSM
T
stg
Tj
August 2003 - Ed: 7D
Surge non repetitive forward current tp = 10 ms sinusoidal
Non repetitive avalanche current tp = 20 µs square
Storage temperature range
Maximum operating junction temperature
TO-220AB / D2PAK /
I2PAK
ISOWATT220AB
TO-220FPAB
Tc=140°C Per diode
Per device
Tc=125°C
Tc=115°C
300 V
30 A
10
20
110 A
5A
-65 + 175 °C
175 °C
A
1/8
STTH2003CT/CG/CF/CR/CFP
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case TO-220AB / D2PAK / I2PAK
ISOWATT220AB
TO-220FPAB
R
th (c)
TO-220AB / D2PAK / I2PAK
ISOWATT220AB
TO-220FPAB
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
Per diode 2.5 °C/W
Total 1.3
Per diode 3.9
Total 3.2
Per diode 4.6
Total 4
Coupling 0.1
Coupling 2.5
Coupling 3.5
*
I
R
Reverse leakage
current
V
**
F
Forward voltage drop I
= 300 V Tj = 25°C
V
R
Tj = 125°C
= 10 A Tj = 25°C
F
Tj = 125°C
30 300
0.85 1
20 µA
1.25 V
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.75xI
F(AV)
+ 0.025 I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
25 ns
35
230 ns
3.5 V
8A
S
trr
tfr
V
FP
factor
I
RM
= 0.5 A Irr= 0.25 A IR=1A Tj=25°C
I
F
I
=1A dIF/dt=-50A/µsVR=30V
F
I
=10A dIF/dt = 100 A/µs
F
Tj=25°C
VFR=1.1xVFmax.
Vcc = 200V IF=10A
Tj = 125°C
dIF/dt = 200 A/µs
0.3 -
2/8
STTH2003CT/CG/CF/CR/CFP
Fig. 1: Conduction losses versus average current
(per diode).
P1(W)
14
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
12
10
8
δ = 1
6
δ
=tp/T
T
tp
4
2
0
024681012
IF(av) (A)
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB
2
PAK/I2PAK).
/D
Zth(j-c)/Rth(j-c)
1.0
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
200
100
Tj=125°C
Tj=25°C
10
Tj=75°C
1
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
VFM(V)
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AB).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
0.0
Single pulse
tp(s)
1E-3 1E-2 1E-1 1E+0
δ
=tp/T
T
tp
Fig. 4: Peak reverse recovery current versus
/dt (90% confidence, per diode).
dI
F
IRM(A)
16
VR=200V
14
Tj=125°C
12
10
8
6
4
2
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
tp(s)
0.0
1E-2 1E-1 1E+0 1E+1
δ
=tp/T
T
tp
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode).
trr(ns)
100
80
60
IF=IF(av)
IF=2*IF(av)
40
20
IF=0.5*IF(av)
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
VR=200V
Tj=125°C
3/8
Loading...