ST STTH2003 User Manual

STTH2003

High frequency secondary rectifier

Features

■Combines highest recovery and reverse voltage performance

■Ultra-fast, soft and noise-free recovery

■Insulated package TO-220FPAB:

–Electrical insulation: 2000 V DC

–Capacitance: 12 pF

Description

Dual center tap fast recovery epitaxial diodes suited for switch mode power supply and high frequency DC/DC converters.

Packaged in TO-220AB, TO-220FPAB, I2PAK or D2PAK, this device is especially intended for secondary rectification.

	A1
		K
	A2
		K
	A2	A2
	K	A1
	A1	D2PAK
	TO-220FPAB
		STTH2003CG
	STTH2003CFP
	A2	A2
	K
	A1	K
		A1
	TO-220AB	I2PAK
	STTH2003CT	STTH2003CR

Table 1.	Device summary
	Symbol		Value
	IF(AV)		2 x 10 A
	VRRM		300 V
	Tj (max)		175 °C
	VF(max)		1 V
	trr (typ)		35 ns

September 2011

Doc ID 5377 Rev 10

1/11

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Characteristics	STTH2003

1

Characteristics

Table 2.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

300

V

IF(RMS)

Forward current rms

30

A

Average forward current

I2PAK, D2PAK,

Tc = 140 °C

Per diode

10

IF(AV)

TO-220AB

A

δ = 0.5

Per device

20

TO-220FPAB

Tc = 115 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

110

A

IRSM

Non repetitive avalanche current

tp = 10 µs square

5

A

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Maximum operating junction temperature

175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value (max)

Unit

I2PAK, D2PAK, TO-220AB

Per diode

2.5

Rth(j-c)

Junction to case

Total

1.3

TO-220FPAB

Per diode

4.6

°C/W

Total

4

Rth(c)

Coupling

I2PAK, D2PAK, TO-220AB

0.1

TO-220FPAB

3.5

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I (1)

Reverse leakage current

Tj = 25 °C

V

= 300 V

20

µA

R

Tj = 125 °C

R

30

300

V (2)

Forward voltage drop

Tj = 25 °C

I

= 10 A

1.25

V

F

Tj = 125 °C

F

0.85

1

1.Pulse test: tp = 5 ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.75 x IF(AV) + 0.025 IF2(RMS))

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STTH2003									Characteristics
Table 5.		Recovery characteristics
Symbol		Parameter		Test conditions			Min.	Typ.	Max.		Unit
					IF = 0.5 A, Irr = 0.25 A				25
					IR = 1 A
trr		Reverse recovery time	Tj = 25 °C								ns
					IF = 1 A, VR = 30 V				35
					dIF/dt = -50 A/µs
tfr					IF = 10 A
		Forward recovery time	Tj = 25 °C		dIF/dt = 100 A/µs				230		ns
					VFR = 1.1 x VFmax
VFP		Peak forward voltage	Tj = 25 °C		IF = 10 A,				3.5		V
					dIF/dt = 100 A/µs
IRM		Reverse recovery current	Tj = 125 °C		IF = 10 A, VCC = 200 V				8		A
S factor		Softness factor			dIF/dt = 200 A/µs			0.3			-
Figure 1.		Conduction losses versus average Figure 2.				Forward voltage drop versus
		forward current (per diode)				forward current (maximum values,
						per diode)

P1(W)								IFM(A)
14			δ = 0.1					200
12		δ = 0.05		δ = 0.2		δ = 0.5		100
											Tj=125°C
10
8							δ = 1							Tj=25°C
6								10					Tj=75°C
4							T
2													VFM(V)
			IF(AV)(A)			=tp/T	tp
0						δ		1
0	2	4		6	8	10	12	0.50	0.75	1.00	1.25	1.50	1.75	2.00	2.25	2.50	2.75	3.00

Figure 3. Relative variation of thermal	Figure 4. Relative variation of thermal
impedance junction to case versus	impedance junction to case versus
pulse duration	pulse duration (TO-22FPAB)

Zth(j-c)/Rth(j-c)				Zth(j-c)/Rth(j-c)
1.0	TO-220AB, D2PAK, I2PAK			1.0
0.8				0.8
0.6				0.6
0.4				0.4
0.2	Single pulse			0.2
				Single pulse
		tp(s)		0.0		tp(s)
0.0
1E-3	1E-2	1E-1	1E+0	1E-2	1E-1	1E+0	1E+1

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Characteristics	STTH2003
Figure 5. Peak reverse recovery current	Figure 6. Reverse recovery time versus dIF/dt
versus dIF/dt (90% confidence, per	(90% confidence, per diode)
diode)

IRM(A)											trr(ns)
16											100
14	VR=200V																			VR=200V
	Tj=125°C				IF=2 x IF(AV)						80									Tj=125°C
12
				IF=IF(AV)										IF=IF(AV)
10		IF=0.5 x IF(AV)									60
															IF=2 x IF(AV)
8																	IF=0.5 x IF(AV)
6											40
4											20
2					dIF/dt(A/µs)										dIF/dt(A/µs)
0											0
0	50	100	150	200	250	300	350	400	450	500	0	50	100	150	200	250	300	350	400	450	500

Figure 7. Softness factor (tb/ta) versus dIF/dt Figure 8. Relative variation of dynamic (typical values, per diode) parameters versus junction

temperature (reference: Tj = 125 °C)

S factor

0.60

VR=200V

Tj=125°C

0.50

0.40

0.30

0.20

0.10

dIF/dt(A/µs)

0.00

0

50

100

150

200

250

300

350

400

450

500

2.4
2.2
2.0
1.8		S factor
1.6
1.4
1.2
1.0
0.8		IRM
0.6
0.4
0.2		Tj(°C)
0.0
25	50	75	100	125

Figure 9. Transient peak forward voltage	Figure 10. Forward recovery time versus dIF/dt
versus dIF/dt (90% confidence, per	(90% confidence, per diode)
diode) (TO-220AB)

VFP(V)											tfr(ns)
10											500
																			IF=IF(AV)
	IF=IF(AV)
																			VFR=1.1 x VF max.
	Tj=125°C
																			Tj=125°C
											400
8
6											300
4											200
2											100
					dIF/dt(A/µs)										dIF/dt(A/µs)
0											0
0	50	100	150	200	250	300	350	400	450	500	0	50	100	150	200	250	300	350	400	450	500

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