ST STTH2002C User Manual
STTH2002C
High efficiency ultrafast diode
Features
■ Suited for SMPS
■ Low losses
■ Low forward and reverse recovery times
■ Low leakage current
■ High junction temperature
■ Insulated package: TO-220FPAB
Description
Dual center tap rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in TO-220AB, D
2
and I
PAK, this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
2
PAK, TO-220FPAB
A1
A2
A2
K
A1
TO-220AB
STTH2002CT
A2
K
A1
TO-220FPAB
STTH2002CFP
Table 1. Device summary
K
I2PA K
STTH2002CR
K
K
A1
2
PA K
D
STTH2002CG
A2
K
A1
A2
Symbol Value
I
F(AV)
V
RRM
(max) 175 °C
T
j
(typ) 0.78 V
V
F
t
(typ) 22 ns
rr
Up to 2 x 10 A
200 V
June 2010 Doc ID 10176 Rev 2 1/11
www.st.com
11
Characteristics STTH2002C
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
I
F(RMS)
Repetitive peak reverse voltage 200 V
RRM
Forward rms current 30 A
Tc = 150 °C Per diode 10 A
I
F(peak)
I
T
Table 3. Thermal parameters
Avarage forward
current δ = 0.5
Surge non repetitive forward current tp = 10 ms sinusoidal 90 A
FSM
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature 175 °C
T
j
2
PAK, D2PA K,
I
TO-220AB
TO-220FPAB
= 140 °C Per device 20 A
T
c
T
= 130 °C Per diode 15 A
c
= 115 °C Per device 30 A
T
c
T
= 120 °C Per diode 10 A
c
T
= 85 °C Per device 20 A
c
Symbol Parameter Value (max) Unit
Per diode 2.5
Per device 1.6
Per diode 5
°C/W
R
th(j-c)
I2PAK , D2PAK,
TO-220AB
Junction to case
TO-220FPAB
Per device 3.8
2
I
R
th(c)
Coupling
PAK , D2PAK, TO-220AB 0.7
TO-220FPAB 2.5
When the diodes 1 and 2 are used simultaneously:
Δ T
j (diode1)
2/11 Doc ID 10176 Rev 2
= P
(diode1)
x R
th(j-c) (per diode
) + P
(diode2)
x R
th(c)
STTH2002C Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
I
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
R
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
Tj = 25 °C
VR = V
= 125 °C 6 100
T
j
= 25 °C IF = 10 A 1.1
T
j
T
= 25 °C IF = 20 A 1.25
j
= 150 °C IF = 10 A 0.78 0.89
T
j
= 150 °C IF = 20 A 1.05
T
j
RRM
10
To evaluate the conduction losses use the following equation:
P = 0.73 x I
Table 5. Dynamic electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
rr
t
fr
V
FP
I
RM
Reverse recovery time Tj = 25 °C
Forward recovery time Tj = 25 °C
Forward recovery voltage Tj = 25 °C
Reverse recovery current Tj = 125 °C
F(AV)
+ 0.020 I
F2(RMS)
= 1 A, VR = 30 V
I
F
/dt = 100 A/µs
dI
F
I
= 10 A,
F
/dt = 100 A/µs
dI
F
VFR = 1.1 x V
= 10 A,
I
F
/dt = 100 A/µs
dI
F
Fmax
IF = 10 A,
VR = 160 V
/dt = 200 A/µs
dI
F
22 27 ns
200 ns
2.4 V
7.0 9.0 A
µA
V
Doc ID 10176 Rev 2 3/11
Characteristics STTH2002C
Figure 1. Peak current versus duty cycle
(per diode)
I (A)
M
80
70
60
50
40
30
P = 5W
20
10
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
P = 20W
P = 10W
δ
I
δ
M
=tp/T
T
tp
Figure 3. Forward voltage drop versus
forward current
(maximum values, per diode)
I (A)
FM
100
90
80
70
60
50
40
30
20
10
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
T =150°C
j
V (V)
FM
T =25°C
j
Figure 5. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
Z/R
th(j-c) th(j-c)
1.0
Figure 2. Forward voltage drop versus
forward current
(typical values, per diode)
I (A)
FM
100
90
80
70
60
50
40
30
20
10
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
T =150°C
j
V (V)
FM
T =25°C
j
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration
Z/R
th(j-c) th(j-c)
1.0
Single pulse
0.1
1.E-03 1.E-02 1.E-01 1.E+00
TO-220AB, D PAK, I PAK
t (s)
p
22
Figure 6. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
100
F=1MHz
V =30mV
OSC RMS
T =25°C
j
Single pulse
0.1
t (s)
0.0
p
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
10
0 50 100 150 200
4/11 Doc ID 10176 Rev 2
V (V)
R
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