ST STTH20004TV1 User Manual
Features
■ Ultrafast switching
■ Low reverse current
■ Low thermal resistance
■ Reduces switching and conduction losses
■ Insulated package:
– Electrical insulation = 2500 V rms
– Capacitance = 189 pF
STTH20004TV1
Ultrafast high voltage rectifier
A1
A2
K2
K1
K2
K1
A1
Description
The STTH20004TV1 uses ST new 400 V
technology and is specially suited for use in
switching power supplies, welding equipment,
and industrial applications, as an output
rectification diode.
A2
ISOTOP
STTH20004TV1
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
T
(max) 150 °C
j
(typ) 0.83 V
V
F
(typ) 60 ns
t
rr
Up to 2 x 120 A
400 V
September 2011 Doc ID 11819 Rev 2 1/8
www.st.com
8
Characteristics STTH20004TV1
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
T
Table 3. Thermal parameter
Repetitive peak reverse voltage 400 V
RRM
Forward rms current 200 A
T
= 90 °C Per diode 100
Average forward current, δ = 0.5
Surge non repetitive forward current tp = 10 ms Sinusoidal 900 A
FSM
Storage temperature range -55 to + 150 °C
stg
Maximum operating junction temperature 150 °C
T
j
c
= 73 °C Per diode 120
T
c
Symbol Parameter Maximum Unit
Per diode 0.50
R
R
Junction to case
th(j-c)
Coupling 0.10
th(c)
When the diodes 1 and 2 are used simultaneously:
Δ T
j (diode1)
Table 4. Static electrical characteristics (per diode)
= P
(diode1)
x R
th(j-c) (per diode)
+ P
(diode2)
x R
th(c)
A
°C/WTo ta l 0 .3 0
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
I
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
R
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25 °C
j
= 125 °C 100 1000
T
j
T
= 25 °C
j
Tj = 150 °C 0.83 1.0
= V
V
R
= 100 A
I
F
RRM
100
1.2
T
To evaluate the maximum conduction losses use the following equation:
P = 0.8 x I
F(AV)
+ 0.002 I
F2(RMS)
µA
V
2/8 Doc ID 11819 Rev 2
STTH20004TV1 Characteristics
Table 5. Dynamic characteristics
Symbol Parameter
t
Reverse recovery time Tj = 25 °C
rr
t
Forward recovery time
fr
Tj = 25 °C
V
Forward recovery voltage 2.6 V
FP
Reverse recovery current
I
RM
Tj = 125 °C
S
factor
Test conditions
I
= 1 A,
F
dIF/dt = 50 A/µs,
VR = 30 V
= 1 A,
I
F
dIF/dt = 200 A/µs,
VR = 30 V
IF = 100 A,
dIF/dt = 200 A/µs
VFR = 1.1 x V
Fmax
IF = 100 A,
dIF/dt = 100 A/µs,
VR = 200 V
Min. Typ. Max. Unit
75 100
ns
45 60
800 ns
18 A
0.4 -
Doc ID 11819 Rev 2 3/8
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