![](/html/27/27e1/27e1913efe519e2acf8f3c58765fddf6a5e7fca275ed0759da140ff4f558a1bf/bg1.png)
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
T
j
VF (typ)
(typ)
t
rr
FEATURES AND BENEFITS
■ Suited for SMPS
■ Very Low Forward Losses
■ Low recovery time
■ High surge current capability
■ Insulated:
Insulating voltage=2500V
Capacitance = 55pF
Up to 2 x 120 A
200 V
150°C
0.75 V
41 ns
RMS
STTH20002TV
A1 K1
A2 K2
K1
A1
K2
A2
ISOTOP
STTH20002TV1
DESCRIPTION
Dual rectifier suited for welding equipment, high
power industrial application.
Packaged in Isotop, this device is intended for use
in the secondary rectification of the applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
T
Repetitive peak reverse voltage 200 V
RMS forward voltage 170 A
Average forward current
δ = 0.5
Tc = 95°C Per diode 100 A
Tc = 80°C Per diode 120
Surge non repetitive forward current tp = 10ms sinusoidal 1000 A
Storage temperature range -55 to + 150 °C
stg
Maximum operating junction temperature 150 °C
j
Order Codes
Part Number Marking
STTH20002TV1 STTH20002TV1
July 2004 REV. 2
1/5
![](/html/27/27e1/27e1913efe519e2acf8f3c58765fddf6a5e7fca275ed0759da140ff4f558a1bf/bg2.png)
STTH20002TV
THERMAL RESISTANCE
Symbol Parameter Maximum Unit
R
th(j-c)
R
th(c)
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Test conditions Min. Typ Max. Unit
IR * Reverse leakage current Tj = 25°C VR = V
VF ** Forward voltage drop Tj = 25°C IF = 100A 1.05 V
Pulse test: * tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.65 x I
DYNAMIC CHARACTERISTICS (per diode)
Junction to case Per diode 0.52 °C/W
Total 0.31
Coupling 0.1 °C/W
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
RRM
100 µA
Tj = 125°C 80 800
IF = 200A 1.20
Tj = 150°C IF = 100A 0.75 0.85
IF = 200A 1.05
** tp = 380 µs,
δ < 2%
F(AV)
+ 0.002 I
F2(RMS)
Symbol Parameter Test conditions Min. Typ Max. Unit
V
I
RM
t
t
Reverse recovery
rr
time
Reverse recovery
current
Forward recovery
fr
time
Forward recovery
FP
Tj = 25°C IF = 1A dIF/dt = 200 A/µs
41 50 ns
VR =30V
Tj = 125°C IF = 100A VR = 160V
11.5 15 A
dIF/dt = 200 A/µs
Tj = 25°C IF = 100A dIF/dt = 200 A/µs
= 1.1 x V
V
FR
Fmax
800 ns
Tj = 25°C IF = 100A dIF/dt = 200 A/µs 2.5 V
voltage
2/5
®