ST STTH1R06 User Manual

Turbo 2 ultrafast high voltage rectifier

Features

■ Ultrafast switching

■ Low reverse recovery current

■ Low thermal resistance

■ Reduces switching and conduction losses

Description

The STTH1R06, which is using ST Turbo 2 600 V
technology, is specially suited as boost diode in
power factor correction circuitry.

The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.

STTH1R06

A

K

DO-41

STTH1R06

K

STTH1R06U

Table 1. Device summary

Symbol Value

STTH1R06A

A

SMB

A

K

SMA

I

F(AV)

V

RRM

(max) 75 µA

I

R

T

j

(typ) 1.0 V

V

F

(max) 25 ns

t

rr

600 V

175 °C

1 A

October 2009 Doc ID 10203 Rev 5 1/9

www.st.com

9

Characteristics STTH1R06

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

Repetitive peak reverse voltage 600 V

RRM

DO-41 10

I

F(RMS)

I

F(AV)

I

T

Table 3. Thermal resistance

Forward rms current

SMA / SMB 7

DO-41 T

Average forward current

SMB T

= 100 °C δ = 0.5

c

= 125 °C δ = 0.5

c

= 135 °C δ = 0.5

c

DO-41

Surge non repetitive forward current

FSM

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature 175 °C

j

SMA / SMB 20

tp = 10ms sinusoidal

1ASMA T

25

Symbol Parameter Value (max) Unit

L = 10 mm DO-41 45

R

th(j-l)

Junction to lead

°C/WSMA 30

SMB 25

R

1. R

Table 4. Static electrical characteristics

Junction to ambient

th(j-a)

is measured with a copper area S = Scm2 (see Figure 14).

th(j-a)

(1)

L = 10 mm DO-41 70 °C/W

A

A

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 25 °C

T

I

Reverse leakage current

R

V

Forward voltage drop

F

j

= 150 °C 10 75

T

j

T

= 25 °C

j

= 150 °C 1.0 1.25

T

j

V

R

= 1A

I

F

= V

RRM

To evaluate the conduction losses use the following equation: P = 1.03 x I

F(AV)

+ 0.27 I

1

1.7

F2(RMS)

2/9 Doc ID 10203 Rev 5

µA

V

STTH1R06 Characteristics

Table 5. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Reverse recovery

t

rr

time

Forward recovery

t

fr

time

V

Forward recovery

FP

voltage

= 25 °C

T

j

= 25 °C

T

j

T

= 25 °C

j

Figure 1. Conduction losses versus average

forward current

P(W)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

IF = 0.5A Irr = 0.25A IR =1A 25

= 1A dIF/dt = -50 A/µs VR =30V 30 45

I

F

= 1A dIF/dt = 100 A/µs

I

F

= 1.1 x V

V

FR

= 1A dIF/dt = 100 A/µs

I

F

VFR = 1.1 x V

Fmax

Fmax

Figure 2. Forward voltage drop vs forward

current

I (A)

FM

15

δ = 0.5

δ

δ = 1

=tp/T

T

tp

14

13

12

11

10

9

8

7

6

5

4

3

2

1

0

012345

(typical values)

T=125°C

j

T=125°C

j

(maximum values)

V (V)

FM

100 ns

10 V

T=25°C

j

(maximum values)

ns

Figure 3. Relative variation of thermal

impedance junction to case vs
pulse duration (DO-41)

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

0.3

δ = 0.2

0.2

δ = 0.1

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Single pulse

t (s)

p

δ

T

=tp/T

Figure 4. Relative variation of thermal

impedance junction to case vs
pulse duration (SMA)

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

tp

0.1

0.0

2

S = 1cm

δ = 0.5

δ

=tp/T

T

tp

δ = 0.2

δ = 0.1

Single pulse

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

t (s)

p

Doc ID 10203 Rev 5 3/9