ST STTH1R04 User Manual

STTH1R04

Ultrafast recovery diode

Features

■ Negligible switching losses

■ Low forward and reverse recovery times

■ High junction temperature

Description

The STTH1R04 series uses ST's new 400 V planar Pt doping technology. The STTH1R04 is specially suited for switching mode base drive and transistor circuits.

Packaged in axial and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.

KA

DO-41

STTH1R04

Band indicates cathode side.

SMA

STTH1R04A

Table 1. Device summary

I

F(AV)

V

RRM

T

j (max)

V

F (typ)

t

rr (typ)

DO-15

STTH1R04Q

SMB

STTH1R04U

1 A

400 V

175 °C

0.9 V

14 ns

May 2008 Rev 1 1/10

www.st.com

Characteristics STTH1R04

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(AV)

I

FSM

T

1. On infinite heatsink with 10 mm lead length

Table 3. Thermal parameters

Symbol Parameter Value Unit

Repetitive peak reverse voltage 400 V

Average forward current, δ = 0.5

DO-41 T

DO-15 T

SMA T

SMB T

= 100 °C

lead

= 105 °C

lead

= 125 °C

lead

= 140 °C

lead

Surge non repetitive forward current tp = 10 ms Sinusoidal 30 A

Storage temperature range -65 to +175 °C

stg

Maximum operating junction temperature

T

j

(1)

1.0 A

175 °C

R

th(j-l)

Junction to lead

Lead length = 10 mm on infinite heatsink

DO-41 55

DO-15 50

°C/W

SMA 35

R

th(j-l)

Table 4. Static electrical characteristics

Junction to lead

SMB 25

Symbol Parameter Test conditions Min Typ Max Unit

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Reverse leakage current

R

(2)

Forward voltage drop

F

= 25 °C

j

= 125 °C 5 50

T

j

T

= 25 °C

j

T

= 150 °C 0.9 1.15

j

= V

V

R

= 1.0 A

I

F

RRM

5

1.5

T

To evaluate the conduction losses use the following equation: P = 0.9 x I

+ 0.250 x I

F(AV)

F2(RMS)

µA

VTj = 100 °C 1.0 1.25

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STTH1R04 Characteristics

Table 5. Dynamic characteristics (Tj = 25 °C unless otherwise stated)

Symbol Parameter

Test conditions

I

= 1 A, dIF/dt = -50 A/µs,

F

VR = 30 V, Tj = 25 °C

t

I

RM

t

V

Figure 1. Conduction losses versus

P(W)

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Reverse recovery time

rr

Reverse recovery current

Forward recovery time

fr

Forward recovery voltage

FP

average forward current

δ=0.05

δ=0.1 δ=0.2

(A)

I

F(AV)

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25 °C

V

R

= 1 A, dIF/dt = -200 A/µs,

I

F

VR = 320 V, Tj = 125 °C

I

= 1 A dIF/dt = 100 A/µs

F

VFR = 1.1 x V

= 1 A dIF/dt = 100 A/µs

I

F

Figure 2. Forward voltage drop versus

δ=0.5

δ

=tp/T

δ=1

T

tp

, Tj = 25 °C

Fmax

forward current

IFM(A)

50

45

40

35

30

25

20

15

10

5

0

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0

TJ=150°C

(Maximum values)

TJ=150°C

(Typical values)

Min Typ Max Unit

30

ns

14 20

2.5 3.5 A

50 ns

3.5 V

TJ=25°CTJ=25°C

(Maximum values)

VFM(V)

Figure 3. Relative variation of thermal

impedance junction to lead versus pulse duration (DO-41)

Z

th(j-l)/Rth(j-l)

1.0

DO-41

0.9

L

=10mm

leads

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(s)

Figure 4. Relative variation of thermal

impedance junction to lead versus pulse duration (DO-15)

Z

th(j-l)/Rth(j-l)

1.0

DO-15

=10mm

L

0.9

leads

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(s)

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