ST STTH1R02 User Manual

Main product characteristics

STTH1R02

Ultrafast recovery diode

I

F(AV)

V

RRM

T

(max) 175° C

j

(typ) 0.7 V

V

F

(typ) 15 ns

t

rr

1.5 A

200 V

Features and benefits

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery times

■ High junction temperature

Description

The STTH1R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits.

Packaged in DO-41, DO-15, SMA, and SMB, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.

K

DO-41

STTH1R02

K

SMA

STTH1R02A

KA

A

K

STTH1R02Q

A

K

STTH1R02U

A

DO-15

A

SMB

Order codes

Part Number Marking

STTH1R02 STTH1R02

STTH1R02RL STTH1R02

STTH1R02A R1A

STTH1R02Q STTH1R02Q

STTH1R02QRL STTH1R02Q

STTH1R02U 1R2S

March 2007 Rev 3 1/10

www.st.com

Characteristics STTH1R02

1 Characteristics

Table 1. Absolute ratings (limiting values at T

= 25° C, unless otherwise specified)

j

Symbol Parameter Value Unit

V

I

RRM

FRM

Repetitive peak reverse voltage 200 V

(1)

DO-41

Repetitive peak forward current

tp = 5 µs, F = 5 kHz

(1)

30 ADO-15

SMA / SMB

DO-41 / DO-15

I

F(RMS)

I

F(AV)

I

FSM

T

1. On infinite heatsink with 10 mm lead length

Table 2. Thermal parameters

RMS forward current

SMA /SMB

DO-41 T

DO-15 T

Average forward current, δ = 0.5

SMA T

SMB T

= 110° C

lead

= 110° C

lead

= 110° C

c

= 110° C

c

Surge non repetitive forward current tp = 10 ms Sinusoidal 60 A

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature 175 °C

j

50 A

1.5 A

Symbol Parameter Value Unit

DO-41 45

R

th(j-l)

Junction to lead Lead Length = 10 mm on infinite heatsink

DO-15 45

°C/W

SMA 30

R

th(j-c)

Table 3. Static electrical characteristics

Junction to case

SMB 30

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 2 20

T

j

= 25° C IF = 4.5 A 1.2

T

j

T

= 25° C

j

Tj = 100° C 0.76 0.85

T

= 150° C 0.70 0.80

j

= V

V

R

= 1.5 A

I

F

RRM

0.89 1

3

T

To evaluate the conduction losses use the following equation: P = 0.68 x I

F(AV)

+ 0.08 I

F2(RMS)

µA

V

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STTH1R02 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

Test conditions

I

= 1 A, dIF/dt = -50 A/µs,

F

VR = 30 V, Tj = 25° C

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 1.5 A, dIF/dt = -200 A/µs,

I

F

VR = 160 V, Tj = 125° C

I

= 1.5 A, dIF/dt = 100 A/µs

F

VFR = 1.1 x V

, Tj = 25° C

Fmax

IF = 1.5 A, dIF/dt = 100 A/µs,

= 25° C

T

j

Min. Typ Max. Unit

23 30

15 20

34 A

50 ns

2.1 V

Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus

forward current (typical values)

IM(A)

50

45

40

35

30

25

20

15

10

5

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P = 5 WP = 5 W

P = 2 WP = 2 W

P = 1 WP = 1 W

δ

T

I

M

=tp/T

d

δ

Figure 3. Forward voltage drop versus

forward current (maximum values)

tp

IFM(A)

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5

Tj=150°C

Tj=25°C

VFM(V)

Figure 4. Relative variation of thermal

impedance junction to case versus pulse duration (SMA)

IFM(A)

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5

Tj=150°C

Tj=25°C

VFM(V)

Z

th(j-a)/Rth(j-a)

1.0

SMA

=1cm²

S

0.9

cu

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(s)

ns

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