ST STTH16L06C User Manual

Features
Ultrafast switching
Low reverse recovery current
Reduces switching and conduction losses
STTH16L06C
Turbo 2 ultrafast high voltage rectifier
A1
K
A2
Description
The STTH16L06, which is using ST Turbo 2 600 V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode.
A2
K
A1
TO-220AB
STTH16L06CT
STTH16L06CFP
K
A2
A1
2
PAK
D
STTH16L06CG

Table 1. Device summary

I
F(AV)
V
RRM
T
j
V
(typ) 1.05 V
F
(max) 35 ns
t
rr
TO-220FPAB
Up to 2 x 10 A
600 V
175 °C
A1
A2
K
April 2011 Doc ID 10760 Rev 2 1/10
www.st.com
10
Characteristics STTH16L06C

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
T

Table 3. Thermal resistance

Repetitive peak reverse voltage 600 V
RRM
Forward rms current 30 A
Tc = 140 °C
= 135 °C
TO-220AB /
2
PA K
Average forward current
D
δ = 0.5
TO-220FPAB
Surge non repetitive forward current tp = 10 ms sinusoidal 120 A
FSM
Storage temperature range -65 to + 175 °C
stg
T
Maximum operating junction temperature 175 °C
j
T
c
= 130 °C
T
c
Tc = 120 °C
= 110 °C
T
c
= 80 °C
T
c
Per diode Per device Per diode Per device
Per diode Per device
8 16 10 20
8 16
Symbol Parameter Maximum Unit
2
PAK Per diode 2.5
2
PAK Total 1.6
R
th(j-c)
Junction to case
TO-220AB / D
TO-220FPAB Per diode 5
TO-220AB / D
TO-220FPAB Total 3.8
2
PA K 0 .7
R
th(c)
Coupling
TO-220AB / D
TO-220FPAB 2.5
A
°C/ W
°C/ W
When the diodes 1 and 2 are used simultaneously:
Δ T
j (diode1)

Table 4. Static electrical characteristics

Symbo
l
(1)
I
R
V
F
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
= P
(diode1)
Parameter Test conditions Min. Typ Max. Unit
Reverse leakage current
(2)
Forward voltage drop
x R
th(j-c) (per diode)
+ P
(diode2)
= 25 °C
T
j
T
= 150 °C 25 240
j
T
= 25 °C
j
= 150 °C 1.05 1.35
T
j
Tj = 25 °C
T
= 150 °C 1.28 1.64
j
To evaluate the maximum conduction losses use the following equation: P = 1.06 x I
2/10 Doc ID 10760 Rev 2
F(AV)
+ 0.036 I
F2(RMS)
x R
V
= V
R
= 8 A
I
F
= 16 A
I
F
th(c)
RRM
8
1.8
2.08
µA
V
STTH16L06C Characteristics

Table 5. Dynamic electrical characteristics

Symbol Parameter
Reverse recovery time Tj = 25 °C
t
rr
I
V
Reverse recovery current Tj = 125 °C
RM
Forward recovery time
t
fr
Forward recover y voltage 3.5 V
FP
= 25 °C
T
j
Figure 1. Conduction losses versus average
current
P(W)
15
10
5
0
0246810
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
δ = 1
=tp/T
Figure 3. Relative variation of thermal
impedance junction to case versus pulse duration (TO-220AB, D
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
Test conditions
I
F
I
F
VR = 30 V
I
F
VR = 400 V
I
F
V
T
tp
2
PAK)
Min. Typ Max. Unit
= 0.5 A, Irr = 0.25 A, IR = 1 A 35
= 1 A, dIF/dt = 50 A/µs,
= 8 A, dIF/dt = 100 A/µs,
= 8 A dIF/dt = 100 A/µs
= 1.1 x V
FR
Fmax
40 55
4.5 6.5 A
200 ns
Figure 2. Forward voltage drop versus
forward current
I (A)
FM
100
90
80
70
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
T=150°C
j
(typical values)
T=150°C
j
(maximum values)
V (V)
FM
(maximum values)
Figure 4. Relative variation of thermal
impedance junction to case versus pulse duration (TO-220FPAB)
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
t (s)
p
T=25°C
j
ns
Doc ID 10760 Rev 2 3/10
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