ST STTH16003 User Manual

STTH16003

High frequency secondary rectifier

Features

■ Combines highest recovery and reverse

voltage performance

■ Ultra-fast, soft and noise-free recovery

■ Insulated package: ISOTOP

– insulated voltage: 2500 V rms – capacitance: < 45 pF

■ Low inductance and low capacitance allow

simplified layout

Description

Dual rectifiers suited for switch mode power supply and high frequency DC to DC converters.

Packaged in ISOTOP, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies.

A1

A2

K1

K2

A2

ISOTOP™

STTH16003TV1

Table 1. Device summary

I

F(AV)

V

RRM

T

j

(typ) 0.95 V

V

F

(typ) 80 ns

t

rr

K1

K2

A1

2 x 60 A

300 V

150 °C

TM: ISOTOP is a registered trademark of

STMicroelectronics

June 2008 Rev 5 1/7

www.st.com

7

Characteristics STTH16003

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode, T

Symbol Parameter Value Unit

= 25 °C unless otherwise stated)

amb

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RSM

T

Table 3. Thermal parameters

Repetitive peak reverse voltage 300 V

RMS forward current 180 A

Average forward current Tc = 85°C δ = 0.5

Per diode Per device

Surge non repetitive forward current tp = 10 ms Sinusoidal 800 A

Non repetitive peak reverse current tp = 100 µs square 5 A

Storage temperature range -55 to + 150 °C

stg

Maximum operating junction temperature 150 °C

T

j

60

160

Symbol Parameter Maximum Unit

Per diode 0.7

R

th(j-c)

th(c)

Junction to case

Coupling 0.1

When the diodes 1 and 2 are used simultaneously:

Δ T

j (diode1)

Table 4. Static electrical characteristics (per diode)

= P

(diode1)

x R

th(j-c) (per diode)

+ P

(diode2)

x R

th(c)

A

°C/WTotal 0.4

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Reverse leakage current

(2)

Forward voltage drop

F

1. to evaluate the maximum conduction losses use the following equation: P = 0.75 x I

F(AV)

+ 0.0025 I

F2(RMS)

T

= 25 °C

j

= 125 °C 0.2 2

T

j

T

= 25 °C

j

= 125 °C 0.8 0.95

T

j

= 300 V

V

R

= 80 A

I

F

200 µA

1.2

2/7

mA

V

STTH16003 Characteristics

Table 5. Recovery characteristics

Symbol Parameter

t

Reverse recovery time Tj = 25 °C

rr

Forward recovery time

t

fr

V

I

S

Forward recovery voltage 5 V

FP

Reverse recovery current

RM

factor

T

Tj = 125 °C

Figure 1. Conduction losses versus

average current (per diode)

= 25 °C

j

Test conditions

I

= 0.5 A, Irr = 0.25 A

F

Min. Typ Max. Unit

IR = 1 A

= 1 A, dIF/dt = 50 A/µs,

I

F

= 30 V

V

R

= 80 A dIF/dt = 200 A/µs

I

F

VFR = 1.1 x V

I

= 60 A, dIF/dt = 200 A/µs,

F

Vcc = 200 V

Fmax

0.3 -

Figure 2. Forward voltage drop versus

forward current (maximum values,

60 ns

80 ns

1000 ns

16 A

per diode)

P1(W)

100

90

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

80 70 60 50 40 30

T

20 10

0

0 102030405060708090100

IF(av) (A)

δ

=tp/T

Figure 3. Relative variation of thermal

impedance junction to case versus pulse duration

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

0.4

δ = 0.2

δ = 0.1

0.2

Single pulse

0.0 1E-3 1E-2 1E-1 1E+0 5E+0

tp(s)

δ

T

=tp/T

δ = 1

IFM(A)

200

100

10

tp

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Tj=125°C

(Typical values)

Tj=125°C

Figure 4. Peak reverse recovery current

versus dI

/dt (90% confidence, per

F

diode)

IRM(A)

30

VR=200V

Tj=125°C

25

20

IF=0.5xIF(av)

15

10

5

tp

0

0 50 100 150 200 250 300 350 400 450 500

IF=IF(av)

dIF/dt(A/µs)

Tj=25°C

VFM(V)

IF=2xIF(av)

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