ST STTH1512 User Manual

STTH1512

1200 V ultrafast recovery diode

Features

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

■ Insulated package: DOP3I

– Electrical insulation = 2500 V rms – Capacitance = 12 pF

Description

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.

Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.

A

K

DOP3I

STTH1512PI

K

A

D2PAK

STTH1512G

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j

(typ) 1.20 V

V

F

t

(typ) 53 ns

rr

KA

K

A

K

DO247

STTH1512W

A

K

TO-220AC

STTH1512D

15 A

1200 V

175 °C

April 2010 Doc ID 12157 Rev 2 1/11

www.st.com

11

Characteristics STTH1512

1 Characteristics

Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage 1200 V

RRM

Forward rms current TO-220AC / DO247 / DOP3I / D2PAK 50 A

2

PAK /

T

= 130 °C

c

Average forward current,

TO-220AC / D DO247

δ = 0.5

15 A

DOP3I Tc = 105 °C

I

T

Table 3. Thermal parameters

Repetitive peak forward

FRM

current

Surge non repetitive

FSM

forward current

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature 175 °C

T

j

t

= 5 µs, F = 5 kHz square 200 A

p

= 10 ms Sinusoidal 200 A

t

p

Symbol Parameter Value Unit

R

Table 4. Static electrical characteristics

th(j-c)

Junction to case

DOP3I 2 °C/W

TO-220AC / D

2

PAK / DO247 1.3 °C/W

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 25 °C

T

Reverse leakage

(1)

I

R

current

(2)

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Forward voltage drop

F

j

= 125 °C 10 100

T

j

T

= 25 °C

j

T

= 150 °C 1.20 1.80

j

V

R

= 15 A

I

F

To evaluate the conduction losses use the following equation: P = 1.4 x I

2/11 Doc ID 12157 Rev 2

F(AV)

+ 0.027 I

F2(RMS)

= V

RRM

15

µA

2.10

VTj = 125 °C 1.25 1.90

STTH1512 Characteristics

Table 5. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

= 1 A, dIF/dt = -50 A/µs,

F

VR = 30 V, Tj = 25 °C

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

t

Forward recovery time

fr

V

Forward recovery voltage

FP

= 1 A, dIF/dt = -100 A/µs,

I

F

V

R

= 15 A, dIF/dt = -200 A/µs,

I

F

VR = 600 V, Tj = 125 °C

I

= 15 A, dIF/dt = -200 A/µs,

F

VR = 600 V, Tj = 125 °C

= 15 A dIF/dt = 50 A/µs

I

F

V

FR

= 15 A, dIF/dt = 50 A/µs,

I

F

Tj = 25 °C

Figure 1. Conduction losses versus

average current

P(W)

35

30

25

20

15

10

5

0

0 2 4 6 8 1012141618

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

δ = 1

=tp/T

Figure 3. Relative variation of thermal

impedance junction to case

= 30 V, Tj = 25 °C

= 1.5 x V

, Tj = 25 °C

Fmax

Figure 2. Forward voltage drop versus

150

140

130

120

110

100

90

80

70

60

50

T

tp

40

30

20

10

0

Figure 4. Peak reverse recovery current

53 75

20 28 A

1.5

5.5 V

forward current

I (A)

FM

T=150°C

j

(typical values)

T=150°C

j

(maximum values)

V (V)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

versus dI

/dt (typical values)

F

FM

105

600 ns

T=25°C

j

(maximum values)

versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

I (A)

RM

50

V =600V

R

T=125°C

j

45

40

35

30

25

20

15

10

5

0

I =0.5 x I

F F(AV)

0 50 100 150 200 250 300 350 400 450 500

I=I

F F(AV)

I =2 x I

F F(AV)

dI /dt(A/µs)

F

ns

Doc ID 12157 Rev 2 3/11

Characteristics STTH1512

Figure 5. Reverse recovery time versus

dI

/dt (typical values)

F

t (ns)

rr

600

550

500

450

400

350

300

250

200

150

100

0 50 100 150 200 250 300 350 400 450 500

I =2 x I

F F(AV)

I=I

F F(AV)

I =0.5 x I

F F(AV)

dI /dt(A/µs)

F

V =600V

R

T=125°C

j

Figure 7. Softness factor versus

dI

/dt (typical values)

F

S factor

3.0

2.5

2.0

1.5

1.0

dI /dt(A/µs)

0.5

0 50 100 150 200 250 300 350 400 450 500

F

I 2xI

≤

F F(AV)

V =600V

R

T=125°C

j

Figure 9. Transient peak forward voltage

versus dI

V (V)

FP

40

I=I

F F(AV)

T=125°C

j

35

30

25

20

15

10

5

0

0 100 200 300 400 500

/dt (typical values)

F

dI /dt(A/µs)

F

Figure 6. Reverse recovery charges versus

dIF/dt (typical values)

Q (µC)

rr

5.5

V =600V

R

T=125°C

j

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0 50 100 150 200 250 300 350 400 450 500

I =2 x I

F F(AV)

I=I

F F(AV)

I =0.5 x I

F F(AV)

dI /dt(A/µs)

F

Figure 8. Relative variations of dynamic

parameters versus junction temperature

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0.25

0.00

25 50 75 100 125

S factor

t

rr

I

RM

Q

RR

T (°C)

j

Figure 10. Forward recovery time versus dI

I=I

F F(AV)

V =600V

R

Reference:T =125°C

j

F

(typical values)

t (ns)

fr

800

700

600

500

400

300

200

100

0

0 100 200 300 400 500

dI /dt(A/µs)

F

I=I

F F(AV)

V =1.5 x V max.

FR F

T=125°C

j

/dt

4/11 Doc ID 12157 Rev 2