ST STTH1506DPI User Manual
®
Tandem 600V HYPERFAST BOOST DIODE
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 150 °C
(max) 2.4 V
V
F
(typ.) 4.8 A
I
RM
(typ.) 16 ns
t
rr
FEATURES AND BENEFITS
ESPECIALLY SUITED AS BOOST DIODE IN
■
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS
■ DESIGNED FOR HIGH DI/DT OPERATION.
HYPERFAST RECOVERY CURRENT TO
COMPETE WITH SIC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
■ INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
■
INSULATION (2500V
PLACEMENT ON SAME HEATSINK AS
MOSFET AND FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK
■
STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN
■
PACKAGE CAPACITANCE: C=16pF
15 A
600 V
) ALLOWS
RMS
STTH1506DPI
12
2
1
DOP3I
(insulated)
DESCRIPTION
The TURBOSWITCH “H” is an ultra high
performance diodecomposedof two300V dicein
series. TURBOSWITCH “H” family drastically cuts
losses in the associated MOSFET when run at
F
/dt.
high dI
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
FSM
Ipeak
T
stg
Tj
October 2003 - Ed: 2A
Repetitive peak reverse voltage
RMS forward current
Surge non repetitive forward current tp = 10 ms sinusoidal
Peak current waveform δ = 0.15 Tc = 120°C
Storage temperature range
Maximum operating junction temperature
600 V
26 A
130 A
35 A
-65 +150 °C
+ 150 °C
1/5
STTH1506DPI
THERMAL AND POWER DATA
Symbol Parameter Test conditions Value Unit
R
th (j-c)
Junction to case
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
1.6 °C/W
*
I
R
Reverse leakage
current
V
**
F
Pulse test: * tp = 100ms, δ <2%
Forward voltage drop I
** tp = 380µs, δ <2%
V
R=VRRM
Tj = 25°C
Tj = 125°C
= 15A Tj=25°C
F
Tj = 150°C
30 200
1.95 2.4
20 µA
3.6 V
To evaluate the maximum conduction losses use the following equation:
P=1.7xI
F(AV)
+ 0.047 x I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
t
rr
Reverse recovery
time
IF= 0.5 A Irr = 0.25A
IR=1A
I
=1A dIF/dt = - 50A/µs
F
Tj = 25°C
16 ns
35
VR=30V
I
RM
Reverse recovery
current
VR= 400 V IF=15A
dIF/dt = -200 A/µs
Tj = 125°C
4.8 6.0 A
S
Reverse recovery
0.4 -
softness factor
Q
rr
Reverse recovery
80 nC
charges
TURN-ON SWITCHING CHARACTERISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
t
fr
V
FP
Forward
recovery time
Forward
IF=15A dIF/dt = 100A/µs,
Tj = 25°C
VFR=1.1xVFmax
IF=15A dIF/dt = 100 A/µs Tj = 25°C
200 ns
6V
recovery voltage
2/5
Loading...