ST STTH1302CT, STTH1302CG, STTH1302CFP User Manual
® |
STTH1302CT/CG/CFP |
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV) |
2 x 6.5 A |
VRRM |
200 V |
Tj (max) |
175 °C |
VF (max) |
0.95 V |
trr (max) |
25 ns |
FEATURES AND BENEFITS
■Suited for SMPS
■Low losses
■Low forward and reverse recovery times
■High surge current capability
■High junction temperature
■Insulated package: TO-220FPAB: Insulation voltage = 2000 VDC Capacitance = 12 pF
DESCRIPTION
Dual center tap rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters.
This device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.
A1
K
A2
K
A1K |
A2 |
K |
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TO-220AB
STTH1302CT |
A2 |
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A1 |
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D2PAK |
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STTH1302CG |
A2
K
A1
TO-220FPAB
STTH1302CFP
ABSOLUTE RATINGS (limiting values, per diode)
Symbol |
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Parameter |
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Value |
Unit |
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VRRM |
Repetitive peak reverse voltage |
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200 |
V |
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IF(RMS) |
RMS forward current |
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20 |
A |
IF(AV) |
Average forward |
TO-220AB / |
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Tc = 155°C |
Per diode |
6.5 |
A |
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current δ = 0.5 |
2 |
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Tc = 145°C |
Per device |
13 |
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D PAK |
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TO-220FPAB |
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Tc = 135°C |
Per diode |
6.5 |
A |
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Tc = 110°C |
Per device |
13 |
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IFSM |
Surge non repetitive forward current |
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tp = 10 ms sinusoïdal |
70 |
A |
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Tstg |
Storage temperature range |
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- 65 to + 175 |
°C |
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Tj |
Maximum operating junction temperature |
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175 |
°C |
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October 2003 - Ed: 2A |
1/7 |
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STTH1302CT/CG/CFP
THERMAL RESISTANCES
Symbol |
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Parameter |
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Value |
Unit |
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Rth (j-c) |
Junction to case |
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TO-220AB / D2PAK |
Per diode |
3 |
°C/W |
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TO-220FPAB |
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5.5 |
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TO-220AB / D2PAK |
Total |
1.9 |
°C/W |
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TO-220FPAB |
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4.5 |
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Rth (c) |
Coupling |
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TO-220AB / D2PAK |
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0.8 |
°C/W |
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TO-220FPAB |
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3.5 |
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When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol |
Parameter |
Tests Conditions |
Min. |
Typ. |
Max. |
Unit |
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IR * |
Reverse leakage Current |
Tj = 25°C |
V R = VRRM |
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6 |
μA |
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Tj = 125°C |
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3 |
60 |
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VF** |
Forward Voltage drop |
Tj = 25°C |
I F = 6.5 A |
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1.1 |
V |
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Tj = 125°C |
I F = 6.5 A |
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0.81 |
0.95 |
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Tj = 25°C |
I F = 13 A |
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1.25 |
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Tj = 125°C |
I F = 13 A |
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0.95 |
1.1 |
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Pulse test : * tp = 5 ms, δ < 2% ** tp = 380 μs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.80 x IF(AV) + 0.023 x IF2(RMS)
DYNAMIC CHARACTERISTICS (per diode)
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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trr |
Reverse recovery time |
Tj = 25°C |
I F = 0.5 A |
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16 |
25 |
ns |
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Irr = 0.25 A |
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IR = 1 A |
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tfr |
Forward recovery time |
Tj = 25°C |
I F = 6.5 A |
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70 |
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ns |
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dIF/dt = 100 A/µs |
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VFR = 1.1 x VF max |
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VFP |
Forward recovery voltage |
Tj = 25°C |
I F = 6.5 A |
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2.2 |
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V |
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dIF/dt = 100 A/µs |
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2/7
STTH1302CT/CG/CFP
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(AV)(W)
8 |
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δ = 0.2 |
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δ = 0.1 |
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δ = 0.5 |
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7 |
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δ = 0.05 |
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6 |
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δ = 1 |
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5 |
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4 |
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3 |
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2 |
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T |
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1 |
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IF(AV)(A) |
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δ=tp/T |
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tp |
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0 |
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0 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
Fig. 2: Peak current versus factor (per diode).
IM(A) |
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60 |
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IM |
T |
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50 |
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δ=tp/T |
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tp |
40 |
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30 |
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P=10W |
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20 |
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P=5W |
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P=2W |
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10 |
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0 |
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δ |
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0.0 |
0.1 |
0.2 |
0.3 |
0.4 |
0.5 |
0.6 |
0.7 |
0.8 |
0.9 |
1.0 |
Fig. 3: Forward voltage drop versus forward cur- |
Fig. 4-1: Relative variation of thermal impedance |
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rent (per diode). |
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junction to case versus pulse duration (TO-220AB / |
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D2PAK). |
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IFM(A) |
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Zth(j-c) / Rth(j-c) |
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100.0 |
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1.0 |
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Tj=125°C |
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Typical values |
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Tj=125°C |
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δ = 0.5 |
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10.0 |
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Maximum values |
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δ = 0.2 |
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Tj=25°C |
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Maximum values |
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δ = 0.1 |
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1.0 |
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Single pulse |
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T |
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VFM(V) |
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tp(s) |
δ=tp/T |
tp |
0.1 |
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0.1 |
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0.0 |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
1.4 |
1.6 |
1.8 |
2.0 |
2.2 |
2.4 |
1.E-03 |
1.E-02 |
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1.E-01 |
1.E+00 |
Fig. 4-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB).
Zth(j-c) / Rth(j-c)
1.0 |
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δ = 0.5 |
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δ = 0.2 |
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δ = 0.1 |
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Single pulse |
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T |
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tp(s) |
δ=tp/T |
tp |
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0.1 |
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1.E-02 |
1.E-01 |
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1.E+00 |
1.E+01 |
Fig. 5-1: Non repetitive surge peak forward current versus overload duration per diode (TO-220AB / D2PAK).
100 |
IM(A) |
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90 |
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80 |
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70 |
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60 |
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TC=25°C |
50 |
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TC=75°C |
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40 |
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TC=125°C |
30 |
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20 |
IM |
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10 |
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t |
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t(s) |
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0 |
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δ=0.5 |
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1.E-03 |
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1.E-02 |
1.E-01 |
1.E+00 |
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3/7 |
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