ST STTH12S06 User Manual

Table 1. Main product characteristics

I

F(AV)

V

RRM

I

RM (typ.)

T

j (max)

V

F (typ)

t

rr (typ)

12 A

600 V

6 A

175 °C

1.5 V

14 ns

STTH12S06

Turbo 2 ultrafast high voltage rectifier

Features and benefits

■ Ultrafast recovery

■ Low reverse recovery current

■ Reduces losses in diode and switching

K

TO-220FPAC

STTH12S06FP

A

transistor

■ Low thermal resistance

■ Higher frequency operation

■ Insulated voltage: 1500 V

RMS

Description

ST's STTH12S06 is a state of the art Ultrafast
recovery diode. By the use of 600 V Pt doping
Planar technology, this diode will outperform the
power factor correction circuits operating in
hardswitching conditions. The extremely low
reverse recovery current of the STTH12S06,
reduces significantly the switching power losses
of the MOSFET, and thus increases the

Table 2. Absolute ratings (limiting values at 125 °C, unless otherwise stated)

Symbol Parameter Value Unit

V

I

F(AV

I

FSM

T

RRM

stg

T

Repetitive peak reverse voltage 600 V

) Average forward current 12 A

Surge non repetitive forward current tp = 10 ms sinusoidal 100 A

Storage temperature range - 65 + 175 °C

Maximum operating junction temperature 175 °C

j

efficiency of the application. This allows designers
to reduce the size of their heatsinks.

This device is also intended for applications in
power supplies and power conversions systems,
and other power switching applications.

October 2007 Rev 1 1/6

www.st.com

6

Characteristics STTH12S06

1 Characteristics

Table 3. Thermal resistances

Symbol Parameter Value Unit

Rth (j-c) Junction to case 4.6 °C/W

Table 4. Static electrical characteristics

Symbol Parameter Tests conditions Min. Typ. Max. Unit

I

V

Table 5. Dynamic electrical characteristics

Reverse leakage current VR = 600 V

R

Forward voltage drop IF = 12 A

F

Symbol Tests conditions Min. Typ. Max. Unit

IF = 1 A dIF/dt = - 200 A/µs VR = 30 V 14 21 ns

rr

VR = 400 V IF = 12A
dIF/dt = - 200 A/µs

VR = 200 V IF = 12A

/dt = - 200 A/µs

dI

rr

F

S factor

I

t

RM

Q

Figure 1. Conduction losses versus

average current

P(W)

34
32
30
28
26
24
22
20
18
16
14
12
10

8
6
4
2
0

0 2 4 6 8 10 12 14 16

δ=0.05

δ=0.1

δ=0.2

I

(A)

F(AV)

δ

δ=0.5

=tp/T

T

Tj = 125 °C

δ=1

tp

Tj = 25 °C 30

= 125 °C 35 400

T

j

T

= 25 °C 3.4

j

= 150 °C 1.5 1.9

T

j

6.0 8.0 A

0.3

160 nC

Figure 2. Forward voltage drop versus

forward current

IFM(A)

100

90

Tj=150°C

80

70

60

50

40

30

20

10

0

01234567

Tj=150°C

(Maximum values)

(Maximum values)

Tj=150°C

Tj=150°C

(Typical values)

(Typical values)

Tj=25°C

(Maximumvalues)

VFM(V)

µA

V

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