ST STTH1212 User Manual
STTH1212
Ultrafast recovery - 1200 V diode
Main product characteristics
I
F(AV)
V
RRM
T
j
V
(typ) 1.25 V
F
(typ) 50 ns
t
rr
12 A
1200 V
175° C
Features and benefits
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
KA
A
K
TO-220AC
STTH1212D
K
A
NC
D2PAK
STTH1212G
Order codes
Part Number Marking
STTH1212D STTH1212D
STTH1212G STTH1212G
STTH1212G-TR STTH1212G
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
March 2006 Rev 1 1/9
www.st.com
9
Characteristics STTH1212
1 Characteristics
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FRM
I
FSM
T
Table 2. Thermal parameter
Repetitive peak reverse voltage 1200 V
RMS forward current 30 A
Average forward current, δ = 0.5 Tc = 130° C 12 A
Repetitive peak forward current tp = 5 µs, F = 5 kHz square 160 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A
Storage temperature range -65 to + 175 °C
stg
T
Maximum operating junction temperature 175 °C
j
Symbol Parameter Value Unit
R
th(j-c)
Table 3. Static electrical characteristics
Junction to case 1.6 °C/W
Symbol Parameter Test conditions Min. Typ Max. Unit
T
= 25° C
(1)
I
R
Reverse leakage current
j
Tj = 125° C 7 70
= V
V
R
RRM
10
µA
(2)
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Forward voltage drop
F
= 380 µs, δ < 2 %
p
To evaluate the conduction losses use the following equation:
P = 1.5 x I
F(AV)
+ 0.033 I
= 25° C
T
j
I
= 12 A
F
Tj = 150° C 1.25 1.9
F2(RMS)
2.2
VTj = 125° C 1.30 2.0
2/9
STTH1212 Characteristics
Table 4. Dynamic characteristics
Symbol Parameter
t
Reverse recovery time
rr
I
Reverse recovery current
RM
S Softness factor
Forward recovery time
t
fr
V
Forward recovery voltage
FP
Figure 1. Conduction losses versus
average current
P(W)
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
V
= 30 V, Tj = 25° C
R
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25° C
V
R
= 12 A, dIF/dt = -200 A/µs,
I
F
= 600 V, Tj = 125° C
V
R
= 12 A, dIF/dt = -200 A/µs,
I
F
V
= 600 V, Tj = 125° C
R
= 12 A dIF/dt = 50 A/µs
I
F
= 1.5 x V
V
FR
I
= 12 A, dIF/dt = 50 A/µs,
F
T
= 25° C
j
, Tj = 25° C
Fmax
Figure 2. Forward voltage drop versus
I (A)
FM
100
90
80
70
60
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
=tp/T
δ = 1
T
tp
Min. Typ Max. Unit
forward current
T=150°C
j
(typical values)
T=150°C
j
(maximum values)
V (V)
100
ns
50 70
16 24 A
2
400 ns
6V
T=25°C
j
(maximum values)
FM
3/9
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