ST STTH1210 User Manual

STTH1210

Ultrafast recovery - high voltage diode

Main product characteristics

I

F(AV)

V

RRM

T

j

(typ) 1.30 V

V

F

(typ) 48 ns

t

rr

12 A

1000 V

175° C

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

■ Insulated packages:

– TO-220Ins

Electrical insulation = 2500 V Capacitance = 7 pF

– TO-220FPAC

Electrical insulation = 2500 V Capacitance = 12 pF

RMS

A

K

TO-220AC

STTH1210D

K

NC

2

DPAK

STTH1210G

K

A

K

TO-220FPAC

STTH1210FP

A

K

TO-220Ins

STTH1210DI

Description

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.

Such demanding applications include industrial power supplies, motor control, and similar

Order codes

Part Number Marking

STTH1210D STTH1210D

STTH1210G STTH1210G

STTH1210G-TR STTH1210G

STTH1210FP STTH1210FP

STTH1210DI STTH1210DI

mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.

March 2006 Rev 1 1/11

www.st.com

11

Characteristics STTH1210

1 Characteristics

Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage 1000 V

2

TO-220AC / D

PAK / TO-220FPAC 30

RMS forward current

TO-220AC Ins 20

2

TO-220AC / D

Average forward current, δ = 0.5

PA K Tc = 125° C

= 40° C

c

12 ATO-220FPAC T

TO-220AC Ins Tc = 95° C

I

FRM

I

FSM

T

Table 2. Thermal parameters

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 120 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 80 A

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature 175 °C

j

Symbol Parameter Value Unit

2

PA K 1 . 9

R

th(j-c)

TO-220AC / D

Junction to case

TO-220AC Ins 3.1

A

°C/WTO-220FPAC 5.4

Table 3. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 3 30

T

j

= 25° C

T

j

T

= 150° C 1.30 1.7

j

= V

V

R

I

= 12 A

F

RRM

10

2.0

T

To evaluate the conduction losses use the following equation: P = 1.3 x I

F(AV)

+ 0.033 I

F2(RMS)

µA

VTj = 100° C 1.40 1.8

2/11

STTH1210 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

Forward recovery time

t

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

30

I (A)

F(AV)

=0.2

25

20

15

10

5

0

0123456789101112131415

=0.1

=0.05

=0.5

T

Test conditions

IF = 1 A, dIF/dt = -50 A/µs, V

= 30 V, Tj = 25° C

R

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 12 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125° C

V

R

= 12 A, dIF/dt = -200 A/µs,

I

F

V

= 600 V, Tj = 125° C

R

= 12 A dIF/dt = 50 A/µs

I

F

= 1.5 x V

V

FR

I

= 12 A, dIF/dt = 50 A/µs,

F

T

= 25° C

j

, Tj = 25° C

Fmax

Figure 2. Forward voltage drop versus

I (A)

FM

=1

120

110

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Min. Typ Max. Unit

forward current

Tj=150°C

(Maximum values)

Tj=150°C

(Typical values)

67 90

ns

48 65

15 20 A

2

400 ns

5V

Tj=25°C

(Maximum values)

V(V)

FM

Figure 3. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

TO-220AC TO-220Ins

0.8

D²PAK

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t(s)

p

Figure 4. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

TO-220FPAB

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

3/11

t (s)

p

Characteristics STTH1210

Figure 5. Peak reverse recovery current

versus dI

I(A)

RM

35

VR=600V T

=125°C

j

30

25

20

IF=0.5 x I

15

10

5

0

0 50 100 150 200 250 300 350 400 450 500

F(AV)

/dt (typical values)

F

IF= 2 x I

F(AV)

IF= I

F(AV)

dI /dt(A/µs)

F

Figure 7. Reverse recovery charges

versus dI

Q (µC)

rr

3.5

VR=600V

=125°C

T

j

3.0

2.5

2.0

1.5

1.0

0.5

0.0 0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

IF= 2 x I

F(AV)

IF= I

F(AV)

IF=0.5 x I

dI /dt(A/µs)

F

F(AV)

Figure 6. Reverse recovery time versus dI

(typical values)

t (ns)

rr

500

450

400

IF= 2 x I

F(AV)

VR=600V

=125°C

T

j

350

300

IF=I

)

F(AV

250

200

150

100

50

0

0 50 100 150 200 250 300 350 400 450 500

dI /dt(A/µs)

F

Figure 8. Softness factor versus dI

IF=0.5 x I

F(AV)

/dt

F

(typical values)

S factor

3.0

2.5

2.0

1.5

dI /dt(A/µs)

1.0 0 50 100 150 200 250 300 350 400 450 500

F

IF=2 x I

VR=600V T

=125°C

j

F(AV)

F

/dt

Figure 9. Relative variations of dynamic

parameters versus junction temperature

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

25 50 75 100 125

S

factor

I

RM

t

Q

RR

T (°C)

j

IF= I

VR=600V

Reference: T

F(AV)

=125°C

j

Figure 10. Transient peak forward voltage

versus dI

V (V)

FP

45

IF= I

F(AV)

Tj=125°C

40

35

30

25

20

15

10

5

0

0 100 200 300 400 500

/dt (typical values)

F

dI /dt(A/µs)

F

4/11