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STTH120R04TV
Ultrafast recovery diode
Main product characteristics
I
F(AV)
V
RRM
V
F (typ)
t
rr (typ)
T
j
2 x 60 A
400 V
150° C
0.95 V
31 ns
Features and benefits
■ Ultrafast
■ Very low switching losses
■ High frequency and high pulsed current
operation
■ Low leakage current
■ Insulated package:
–ISOTOP
Electrical insulation = 2500 V
RMS
Capacitance = 45 pF
Description
The STTH120R04TV series uses ST's new 400 V
planar Pt doping technology. The STTH120R04 is
specially suited for switching mode base drive and
transistor circuits, such as welding equipment.
A1
A2
K1
K2
A1
K1 A2
A1
K1
A2
K2
ISOTOP
STTH120R04TV1
K1
A2
ISOTOP
STTH120R04TV2
Order codes
Part Number Marking
STTH120R04TV1 STTH120R04TV1
STTH120R04TV2 STTH120R04TV2
K2
A1
K2
March 2007 Rev 1 1/7
www.st.com
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Characteristics STTH120R04TV
1 Characteristics
Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
V
RSM
I
F(RMS)
I
F(AV)
I
FRM
I
FSM
T
T
Table 2. Thermal parameters
Repetitive peak reverse voltage 400 V
Non repetitive peak reverse voltage 400 V
RMS forward current Per diode 140 A
Average forward current, δ = 0.5
Per diode T
Per package T
= 75° C 60 A
c
= 70° C 120 A
c
Repetitive peak forward current tp = 5 µs, F = 1 kHz square 1800 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 700 A
Storage temperature range -65 to + 150 °C
stg
Maximum operating junction temperature 150 °C
j
Symbol Parameter Value Unit
Per diode 0.8
R
R
th(j-c)
th(c)
Junction to case
° C/WTo t al 0 . 45
Coupling thermal resistance 0.1
When the diodes are used simultaneously:
ΔT
j(diode1)
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= P
(diode1)
x R
(per diode) + P
th(j-c)
T
= 25° C
j
= 125° C 60 600
T
j
T
= 25° C
j
= 150° C 0.95 1.2
T
j
(diode2)
= V
V
R
= 60 A
I
F
x R
RRM
th(c)
60
1.5
To evaluate the conduction losses use the following equation:
P = 0.9 x I
+ 0.005 x I
F(AV)
F2(RMS)
µA
VTj = 100° C 1.05 1.3
2/7
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STTH120R04TV Characteristics
Table 4. Dynamic characteristics
Symbol Parameter
t
Reverse recovery time
rr
I
Reverse recovery current
RM
S Softness factor
t
Forward recovery time
fr
V
Forward recovery voltage
FP
Figure 1. Conduction losses versus
average current
P(W)
100
80
60
40
20
0
0 1020304050607080
δ=0.1
δ=0.05
δ=0.2
I
(A)
F(AV)
δ=0.5
δ
=tp/T
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25° C
V
R
= 1 A, dIF/dt = -200 A/µs,
I
F
VR = 30 V, Tj = 25° C
I
= 60 A, dIF/dt = -200 A/µs,
F
VR = 320 V, Tj = 125° C
= 60 A, dIF/dt = -200 A/µs,
I
F
= 320 V, Tj = 125° C
V
R
= 60 A dIF/dt = 100 A/µs
I
F
VFR = 1.5 x V
= 60 A, dIF/dt = 100 A/µs,
I
F
= 25° C
T
j
Fmax
, Tj = 25° C
Figure 2. Forward voltage drop versus
IFM(A)
δ=1
T
tp
200
180
160
140
120
100
80
60
40
20
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Min. Typ Max. Unit
forward current
TJ=150°C
TJ=150°C
(Maximum values)
(Maximum values)
TJ=150°C
TJ=150°C
(Typical values)
(Typical values)
80
40 55
ns
31 45
11 16 A
0.4
600 ns
3.2 V
TJ=25°C
TJ=25°C
(Maximum values)
(Maximum values)
VFM(V)
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Z
th(j-c)/Rth(j-c)
1.0
Single pulse
ISOTOP
0.1
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
tp(s)
Figure 4. Peak reverse recovery current
versus dI
IRM(A)
25.0
IF= 60A
22.5
V
=320V
R
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
10 100 1000
3/7
/dt (typical values)
F
Tj=125 °C
Tj=25 °C
dIF/dt(A/µs)