ST STTH120L06TV User Manual

STTH120L06TV

Turbo 2 ultrafast high voltage rectifier

Features and benefits

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces switching and conduction losses

Description

The STTH120L06TV, which is using ST Turbo 2
600 V technology, is specially suited for use in
switching power supplies, and industrial
applications, as rectification and free-wheeling
diode.

A1 K1

A2 K2

A2

A1

K1

ISOTOP

STTH120L06TV1

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j

(typ) 0.95 V

V

F

(max) 70 ns

t

rr

K2

2 x 60 A

600 V

150 °C

TM: ISOTOP is a trademark of STMicroelectronics

April 2011 Doc ID 10766 Rev 2 1/8

www.st.com

8

Characteristics STTH120L06TV

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

Table 3. Thermal parameter

Repetitive peak reverse voltage 600 V

RRM

RMS forward current 120 A

Average forward current, δ = 0.5 Tc = 65° C Per diode 60 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 500 A

FSM

Storage temperature range -55 to + 150 °C

stg

T

Maximum operating junction temperature 150 °C

j

Symbol Parameter Maximum Unit

Per diode 0.98

R

R

Junction to case

th(j-c)

Coupling 0.1

th(c)

°C/WTotal 0.54

When the diodes 1 and 2 are used simultaneously:

Δ T

j (diode1)

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ Max. Unit

I

R

V

F

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

= P

(diode1)

(1)

Reverse leakage current

(2)

Forward voltage drop

x R

th(j-c) (per diode)

+ P

(diode2)

x R

th(c)

Tj = 25 °C

VR = V

= 125 °C 50 500

T

j

T

= 25 °C IF = 60 A 1.55

j

= 150 °C 0.95 1.20

T

j

RRM

50

µA

V

To evaluate the maximum conduction losses use the following equation:
P = 0.93 x I

2/8 Doc ID 10766 Rev 2

F(AV)

+ 0.0045 I

F2(RMS)

STTH120L06TV Characteristics

Table 5. Dynamic characteristics (per diode)

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Test conditions

Reverse recovery time Tj = 25 °C

Reverse recovery current Tj = 125 °C

Forward recovery time Tj = 25 °C

Forward recovery voltage Tj = 25 °C

Figure 1. Conduction losses versus average

forward current (per diode)

P(W)

140

120

100

80

60

40

20

0

0 102030405060 708090100

δ = 0.1

δ = 0.05

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Relative variation of thermal

impedance junction to case versus
pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Single pulse

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

p

δ

=tp/T

T

tp

Min. Typ. Max. Unit

= 0.5 A,

I

F

= 0.25 A,

I

rr

70

IR = 1 A

= 1 A,

I

F

/dt = 50 A/µs,

dI

F

75 105

VR = 30 V

I

= 60 A,

F

/dt = 400 A/µs,

dI

F

14 19 A

dIF/dt = 100 A/µs

I

= 60 A,

F

/dt = 200 A/µs

dI

F

VFR = 1.1 x V

I

= 60 A,

F

/dt = 200 A/µs

dI

F

VFR = 1.1 x V

Fmax

3V

Fmax

500 ns

Figure 2. Forward voltage drop versus

forward current (per diode)

I (A)

FM

200

180

160

140

120

100

80

60

40

20

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

T =150°C

j

(typical values)

T =150°C

j

(maximum values)

V (V)

FM

T =25°C

j

(maximum values)

Figure 4. Peak reverse recovery current

versus dI

/dt (typical values, per

F

diode)

I (A)

RM

60

V =400V

R

T =125°C

j

50

40

30

20

10

0

0 50 100 150 200 250 300 350 400 450 500

I =0.5 x I

F F(AV)

I=I

dI /dt(A/µs)

F

F F(AV)

I =2 x I

F F(AV)

ns

Doc ID 10766 Rev 2 3/8