ST STTH12012TV User Manual
Main product characteristics
I
F(AV)
V
RRM
T
j
(typ) 1.30 V
V
F
(typ) 50 ns
t
rr
2 x 60 A
1200 V
150° C
Features and benefits
STTH12012TV
Ultrafast recovery - 1200 V diode
K2
A2
K1
A1
STTH12012TV
A1
K1
STTH12012TV2
K1
A2
A1
K2
A1
K2
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
■ Insulated package:
Electrical insulation = 2500 V
RMS
Capacitance = 45 pF
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
A2
K2
K1
A2
ISOTOP
Order codes
Part Number Marking
STTH12012TV1 STTH12012TV1
STTH12012TV2 STTH12012TV2
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
March 2006 Rev 1 1/8
www.st.com
8
Characteristics STTH12012TV
1 Characteristics
Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FRM
I
FSM
T
Table 2. Thermal parameters
Repetitive peak reverse voltage 1200 V
RMS forward current 150 A
Average forward current, δ = 0.5 Tc = 45° C per diode 60 A
Repetitive peak forward current tp = 5 µs, F = 5 kHz square 600 A
Surge non repetitive forward
current
Storage temperature range -65 to + 150 °C
stg
T
Maximum operating junction temperature 150 °C
j
= 10 ms Sinusoidal 420 A
t
p
Symbol Parameter Value Unit
Per diode 0.74
R
R
th(j-c)
th(c)
Junction to case
°C/WTotal 0.42
Coupling thermal resistance 0.1
When the diodes are used simultaneously:
∆T
j(diode1)
Table 3. Static electrical characteristics
= P
(diode1)
x R
(per diode) + P
th(j-c)
(diode2)
x R
th(c)
Symbol Parameter Test conditions Min. Typ Max. Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
Tj = 25° C
VR = V
I
= 60 A
F
RRM
= 125° C 30 300
T
j
= 25° C
T
j
= 150° C 1.30 1.95
T
j
30
2.25
To evaluate the conduction losses use the following equation:
P = 1.50 x I
F(AV)
+ 0.0075 I
F2(RMS)
µA
VTj = 125° C 1.35 2.05
2/8
STTH12012TV Characteristics
Table 4. Dynamic characteristics
Symbol Parameter
t
Reverse recovery time
rr
I
Reverse recovery current
RM
S Softness factor
t
Forward recovery time
fr
V
Forward recovery voltage
FP
Figure 1. Conduction losses versus
average current
P(W)
160
140
120
100
80
60
40
20
0
0 1020304050607080
δ=0.05
δ=0.1
I (A)
F(AV)
δ=0.2
δ=0.5
δ
=tp/T
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25° C
V
R
= 1 A, dIF/dt = -200 A/µs,
I
F
VR = 30 V, Tj = 25° C
I
= 60 A, dIF/dt = -200 A/µs,
F
VR = 600 V, Tj = 125° C
= 60 A, dIF/dt = -200 A/µs,
I
F
= 600 V, Tj = 125° C
V
R
= 60 A dIF/dt = 100 A/µs
I
F
VFR = 1.5 x V
= 60 A, dIF/dt = 100 A/µs,
I
F
= 25° C
T
j
, Tj = 25° C
Fmax
Figure 2. Forward voltage drop versus
I (A)
FM
δ=1
T
tp
200
180
160
140
120
100
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Min. Typ Max. Unit
forward current
Tj=150°C
Tj=150°C
(Maximum values)
(Maximum values)
Tj=150°C
Tj=150°C
(Typical values)
(Typical values)
125
63 85
50 70
32 45 A
1
750 ns
4.5 V
Tj= 25 °C
(Maximum values)
V (V)
FM
ns
3/8
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