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STTH12010TV
Ultrafast recovery - high voltage diode
Main product characteristics
I
F(AV)
V
RRM
T
j
V
(typ) 1.30 V
F
(typ) 49 ns
t
rr
2 x 60 A
1000 V
150° C
Features and benefits
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
■ Insulated package
– Electrical insulation = 2500 V
RMS
Capacitance = 45 pF
Description
The compromise-free, high quality design of this
diode has produced a device with low leakage
current, regularly reproducible characteristics and
intrinsic ruggedness. These characteristics make
it ideal for heavy duty applications that demand
long term reliability.
A1
A2
K1
K2
A1
K1 A2
A1
K1
A2
K2
K1
A2
ISOTOP
STTH12010TV1
STTH12010TV2
Order codes
Part Number Marking
STTH12010TV1 STTH12010TV1
STTH12010TV2 STTH12010TV2
K2
A1
K2
ISOTOP
These demanding applications include industrial
power supplies, motor control, and similar
industrial systems that require rectification and
freewheeling. These diodes also fit into auxiliary
functions such as snubber, bootstrap, and
demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate advantage for reducing
maintenance of the equipment
March 2006 Rev 1 1/8
www.st.com
8
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Characteristics STTH12010TV
1 Characteristics
Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FRM
I
FSM
T
Table 2. Thermal parameters
Repetitive peak reverse voltage 1000 V
RMS forward current 150 A
Average forward current, δ = 0.5 Per diode Tc = 50° C 60 A
Repetitive peak forward current tp = 5 µs, F = 5 kHz square 750 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 400 A
Storage temperature range -65 to + 150 °C
stg
T
Maximum operating junction temperature 150 °C
j
Symbol Parameter Value Unit
Per diode 0.80
R
R
th(j-c)
th(c)
Junction to case
°C/WTotal 0.45
Coupling thermal resistance 0.1
When the diodes are used simultaneously:
∆T
j(diode1)
Table 3. Static electrical characteristics
= P
(diode1)
x R
(per diode) + P
th(j-c)
(diode2)
x R
th(c)
Symbol Parameter Test conditions Min. Typ Max. Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25° C
j
= 125° C 20 200
T
j
T
= 25° C
j
T
= 150° C 1.30 1.70
j
= V
V
R
= 60 A
I
F
RRM
20
2.0
T
To evaluate the conduction losses use the following equation:
P = 1.3 x I
F(AV)
+ 0.0067 I
F2(RMS)
µA
VTj = 100° C 1.40 1.80
2/8
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STTH12010TV Characteristics
Table 4. Dynamic characteristics
Symbol Parameter
t
Reverse recovery time
rr
I
Reverse recovery current
RM
S Softness factor
Forward recovery time
t
fr
V
Forward recovery voltage
FP
Figure 1. Conduction losses versus
average current
P(W)
140
120
100
80
60
40
20
0
0 1020304050607080
=0.05
=0.1
I (A)
F(AV)
=0.2
=0.5
Test conditions
IF = 1 A, dIF/dt = -50 A/µs,
V
= 30 V, Tj = 25° C
R
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25° C
V
R
IF = 1 A, dIF/dt = -200 A/µs,
= 30 V, Tj = 25° C
V
R
IF = 60 A, dIF/dt = -200 A/µs,
V
= 600 V, Tj = 125° C
R
= 60 A, dIF/dt = -200 A/µs,
I
F
= 600 V, Tj = 125° C
V
R
= 60 A dIF/dt = 100 A/µs
I
F
= 1.5 x V
V
FR
I
= 60 A, dIF/dt = 100 A/µs,
F
, Tj = 25° C
Fmax
Tj = 25° C
Figure 2. Forward voltage drop versus
I (A)
FM
=1
T
200
180
160
140
120
100
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Min. Typ Max. Unit
forward current
Tj=150°C
(Maximum values)
Tj=150°C
(Typical values)
115
61 80
ns
49 65
31 40 A
1
750 ns
4V
Tj=25°C
(Maximum values)
V (V)
FM
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Z/R
th(j-c) th(j-c)
1.0
Single pulse
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
t (s)
p
Figure 4. Peak reverse recovery current
versus dI
I (A)
RM
70
VR=600V
T
=125°C
j
60
50
40
30
20
10
0
0 50 100 150 200 250 300 350 400 450 500
3/8
IF=0.5 x I
/dt (typical values)
F
IF= I
F(AV)
F(AV)
dI /dt(A/µs)
IF= 2 x I
F(AV)
F