ST STTH12010TV User Manual

STTH12010TV

Ultrafast recovery - high voltage diode

Main product characteristics

I

F(AV)

V

RRM

T

j

V

(typ) 1.30 V

F

(typ) 49 ns

t

rr

2 x 60 A

1000 V

150° C

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

■ Insulated package

– Electrical insulation = 2500 V

RMS

Capacitance = 45 pF

Description

The compromise-free, high quality design of this
diode has produced a device with low leakage
current, regularly reproducible characteristics and
intrinsic ruggedness. These characteristics make
it ideal for heavy duty applications that demand
long term reliability.

A1

A2

K1

K2

A1

K1 A2

A1

K1

A2

K2

K1

A2

ISOTOP

STTH12010TV1

STTH12010TV2

Order codes

Part Number Marking

STTH12010TV1 STTH12010TV1

STTH12010TV2 STTH12010TV2

K2

A1

K2

ISOTOP

These demanding applications include industrial
power supplies, motor control, and similar
industrial systems that require rectification and
freewheeling. These diodes also fit into auxiliary
functions such as snubber, bootstrap, and
demagnetization applications.

The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate advantage for reducing
maintenance of the equipment

March 2006 Rev 1 1/8

www.st.com

8

Characteristics STTH12010TV

1 Characteristics

Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

Table 2. Thermal parameters

Repetitive peak reverse voltage 1000 V

RMS forward current 150 A

Average forward current, δ = 0.5 Per diode Tc = 50° C 60 A

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 750 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 400 A

Storage temperature range -65 to + 150 °C

stg

T

Maximum operating junction temperature 150 °C

j

Symbol Parameter Value Unit

Per diode 0.80

R

R

th(j-c)

th(c)

Junction to case

°C/WTotal 0.45

Coupling thermal resistance 0.1

When the diodes are used simultaneously:
∆T

j(diode1)

Table 3. Static electrical characteristics

= P

(diode1)

x R

(per diode) + P

th(j-c)

(diode2)

x R

th(c)

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 20 200

T

j

T

= 25° C

j

T

= 150° C 1.30 1.70

j

= V

V

R

= 60 A

I

F

RRM

20

2.0

T

To evaluate the conduction losses use the following equation:
P = 1.3 x I

F(AV)

+ 0.0067 I

F2(RMS)

µA

VTj = 100° C 1.40 1.80

2/8

STTH12010TV Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

Forward recovery time

t

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

140

120

100

80

60

40

20

0

0 1020304050607080

=0.05

=0.1

I (A)

F(AV)

=0.2

=0.5

Test conditions

IF = 1 A, dIF/dt = -50 A/µs,
V

= 30 V, Tj = 25° C

R

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

IF = 1 A, dIF/dt = -200 A/µs,

= 30 V, Tj = 25° C

V

R

IF = 60 A, dIF/dt = -200 A/µs,
V

= 600 V, Tj = 125° C

R

= 60 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125° C

V

R

= 60 A dIF/dt = 100 A/µs

I

F

= 1.5 x V

V

FR

I

= 60 A, dIF/dt = 100 A/µs,

F

, Tj = 25° C

Fmax

Tj = 25° C

Figure 2. Forward voltage drop versus

I (A)

FM

=1

T

200

180

160

140

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Min. Typ Max. Unit

forward current

Tj=150°C

(Maximum values)

Tj=150°C

(Typical values)

115

61 80

ns

49 65

31 40 A

1

750 ns

4V

Tj=25°C

(Maximum values)

V (V)

FM

Figure 3. Relative variation of thermal

impedance junction to case
versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

t (s)

p

Figure 4. Peak reverse recovery current

versus dI

I (A)

RM

70

VR=600V
T

=125°C

j

60

50

40

30

20

10

0

0 50 100 150 200 250 300 350 400 450 500

3/8

IF=0.5 x I

/dt (typical values)

F

IF= I

F(AV)

F(AV)

dI /dt(A/µs)

IF= 2 x I

F(AV)

F