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®
HIGH FREQUENCY SECONDARY RECTIFIER
MAJOR PRODUCT CHARACTE RISTICS
STTH12003TV
I
F(AV)
V
RRM
2 x 60 A
300 V
Tj (max) 150 °C
(max) 1 V
V
F
trr (max) 70 ns
FEATURES AND BENE FITS
COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
INSULATED PACKAGE: ISOTOP
Insulated voltage: 2500 V
RMS
Capacitance: < 45 pF
LOW INDUCTANCE AND LOW CAPACITANCE
ALLOW SIMPLIFIED LAY OUT
DESCR IPT ION
Dual rectifiers suited for Switch Mode Power
Supply and high frequency DC to DC converters.
Packaged in ISOTOP, this device is intended for
use in low voltage, high frequency inverters, free
wheeling operation, welding equipment and
telecom power supplies.
K2
A1
A2
A2
ISOTOP
K1
K2
K1
A1
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RSM
T
stg
Tj
ISOTOP is a registered trademark of STMicroelectronics
October 1999 - Ed: 4D
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 85°C
Surge non repetitive forward current tp = 10 ms sinusoidal
Non repetitive peak reverse current tp = 100 µs square
Storage temperature range
Maximum operating junction temperature
δ = 0.5
Per diode
Per device
300 V
150 A
60
120
600 A
5A
- 55 to + 150 °C
150 °C
A
1/5
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STTH12003TV
THERMA L RE SISTA NC ES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case Per diode
Total
R
th (c)
Coupling
When the diodes 1 and 2 are used simultaneously:
∆Tj (diode 1) = P (diode 1) x R
(per diode) + P (diode 2) x R
th(j-c)
th(C)
STATIC ELECTRICAL CHARACTE RISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
0.8
0.45
0.1
°C/W
*
I
R
V
F
Reverse leakage
current
**
Forward voltage drop I
V
= 300 V Tj = 25°C
R
Tj = 125°C
= 60 A Tj = 25°C
F
Tj = 125°C
0.12 1.2 mA
0.85 1
120 µA
1.25 V
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.75 x I
+ 0.0042 x I
F(AV)
F2(RMS)
RECOVERY CHARA CTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
trr
= 0.5 A Irr = 0.25 A IR = 1A Tj = 25°C
I
F
IF = 1 A dIF/dt = - 50 A/µs VR = 30 V Tj = 25°C
tfr
V
FP
I
= 60 A dIF/dt = 200 A/µs Tj = 25°C
F
VFR = 1.1 x VF max. Tj = 25°C
55 ns
70
600 ns
5V
S
factor
I
RM
2/5
Vcc = 200 V IF = 60 A
dI
/dt = 200 A/µs
F
Tj = 125°C
0.3 14 A