ST STTH110 User Manual
Features
■ Low forward voltage drop
■ High reliability
■ High surge current capability
■ Soft switching for reduced EMI disturbances
■ Planar technology
Description
The STTH110, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling, clamping, snubbering,
demagnetization in power supplies and other
power switching applications.
STTH110
High voltage ultrafast rectifier
A
K
SMA
(JEDEC DO-214AC)
STTH110A
Table 1. Device summary
Symbol Value
K
DO-41
STTH110
A
I
F(AV)
V
RRM
T
(max) 175 °C
j
(max) 1.42 V
V
F
1000 V
1 A
October 2009 Doc ID 9344 Rev 2 1/6
www.st.com
6
Characteristics STTH110
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
V
(RMS)
I
F(AV)
I
T
Table 3. Thermal resistance
Repetitive peak reverse voltage 1000 V
RRM
Voltage rms 700 V
Average forward current
SMA T
DO-41 T
Forward Surge current
FSM
t = 8.3 ms
Storage temperature range -50 to + 175 °C
stg
T
Maximum operating junction temperature 175 °C
j
= 110 °C δ = 0.5 1
L
= 125 °C δ = 0.5
L
SMA 18
DO-41 20
1
Symbol Parameter Value Unit
SMA 30
R
R
th(j-a)
Table 4. Static Electrical Characteristics
Junction to lead
th(j-l)
Junction to ambient
Lead length = 10 mm DO-41 45
Lead length = 10 mm DO-41 110
°C/W
Symbol Parameter Tests conditions Min. Typ. Max. Unit
Reverse leakage
I
R
current
V
Forward voltage drop
F
Tj = 25 °C
VR = 1000 V
= 125 °C 50
T
j
T
= 25 °C
j
T
= 125 °C 0.98 1.42
j
= 1 A
I
F
10
1.7
A
A
µA
V
To evaluate the conduction losses use the following equation:
P = 1.20 x I
Table 5. Dynamic electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
t
fr
V
FP
2/6 Doc ID 9344 Rev 2
+ 0.225 I
F(AV)
Reverse
recovery time
Forward
recovery time
Forward
recovery voltage
F2(RMS)
T
= 25 °C
j
= 25 °C
T
j
I
= 0.5, A
F
= 0.25 A,
I
rr
IR = 1 A
= 1 A,
I
F
/dt = 50 A/ms
dI
F
VFR = 1.1 x
VFmax
75 ns
300 ns
18 V
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