ST STTH102-Y User Manual

Automotive high efficiency ultrafast diode

Features

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery times

■ High junction temperature

■ ECOPACK

■ AEC-Q101 qualified

Description

The STTH102-Y, which is using ST’s new 200 V planar technology, is specially suited for switching mode base drive and transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications for automotive.

®

2 compliant component

STTH102-Y

K

SMA

(JEDEC DO-214AC)

STTH102AY

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

(max) 175 °C

j

(max) 0.78 V

V

F

(max) 20 ns

t

rr

A

1 A

200 V

November 2011 Doc ID 17982 Rev 1 1/7

www.st.com

7

Characteristics STTH102-Y

1 Characteristics

Table 2. Absolute rating (limiting values)

Symbol Parameter Value Unit

V

I

F(AV)

I

T

Repetitive peak reverse voltage 200 V

RRM

Average forward current TL = 148 °C δ = 0.5 1 A

Surge non repetitive forward current tp = 10 ms sinusoidal 40 A

FSM

Storage temperature range -65 to + 175 °C

stg

Operating junction temperature range -40 to +175 °C

T

j

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

Table 3. Thermal resistance

Symbol Parameter Value Unit

R

Table 4. Static Electrical Characteristics

Junction to lead 30 °C/W

th(j-l)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

IR

(1)

Reverse leakage current

= 25 °C

j

= 125 °C 1 25

T

j

= V

V

R

RRM

1

T

IF = 700 mA 0.90

T

= 25 °C

(2)

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: t

Forward voltage drop

F

= 380 µs, δ < 2%

p

j

= 125 °C IF = 1 A 0.68 0.78

T

j

= 1 A 0.97

F

µA

VI

To evaluate the conduction losses use the following equation: P = 0.65 x I

Table 5. Dynamic electrical characteristics

F(AV)

+ 0.130 I

F2(RMS)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

= 0.5 A Irr = 0.25 A

I

t

Reverse recovery time Tj = 25 °C

rr

t

Forward recovery time Tj = 25 °C

fr

V

Forward recovery

FP

voltage

T

= 25 °C IF = 1 A dIF/dt = 50 A/ms 1.8 V

j

F

= 1 A

I

R

= 1 A dIF/dt = 50 A/ms

I

F

= 1.1 x VFmax

V

FR

12 20 ns

50 ns

2/7 Doc ID 17982 Rev 1

STTH102-Y Characteristics

Figure 1. Average forward power dissipation

versus average forward current

P (W)

F(AV)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Relative variation of thermal

impedance junction to ambient versus pulse duration

Z/R

th(j-a) th(j-a)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

epoxy printed circuit board,

e = 35 µm, recommended pad layout

(Cu)

δ

=t /T

T

t

p

t (s)

p

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Figure 5. Junction capacitance versus

reverse voltage applied (typical values)

C(pF)

100

10

V (V)

1

1 10 100 1000

R

F=1MHz

V =30mV

OSC RMS

T=25°C

j

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

I (A)

F(AV)

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0 25 50 75 100 125 150 175

δ

=tp/T

T

tp

T (°C)

R =120°C/W

th(j-a)

amb

R=R

th(j-a) th(j-I)

Figure 4. Forward voltage drop versus

forward current

I (A)

FM

100.0

T=125°C

j

(maximum values)

10.0

1.0

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

T=125°C

j

(typical values)

(maximum values)

V (V)

FM

T=25°C

j

Figure 6. Reverse recovery time versus dIF/dt

(90% confidence)

t (ns)

rr

70

60

50

40

30

20

10

0

1 10 100 1000

T=125°C

j

T=25°C

j

dI /dt(A/µs)

F

I =1A

F

V =100V

R

T=125°C

j

Doc ID 17982 Rev 1 3/7